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Abstract: No abstract text available
Text: TC59S1608FT-12 1/2 IL11 * C-MOS 16 M (1,048,576x8x2)-BIT SYNCHRONOUS DYNAMIC RAM - TOP VIEW 17 1 VDD (+3.3 V) GND 44 DQ0 I/O 2 27 GNDQ 42 DQ1 I/O 4 26 25 41 DQ6 I/O VDDQ VDDQ (+3.3 V) (+3.3 V) DQ2 I/O 6 24 40 21 20 39 DQ5 I/O 7 GNDQ 19 GNDQ 38 DQ3 I/O 8
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TC59S1608FT-12
576x8x2
2048x512x8
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Untitled
Abstract: No abstract text available
Text: Enhanced Memory Systems Inc. 4Mx4, 2 M x 8 ,1 Mx16 16Mbit Enhanced Synchronous DRAM preliminary Data sheet Overview Features • High Perform ance: CAS latency = 2 • P rogram m able Burst Length: 1,2,4,8,full-page • P rogram m able W rap Sequence, S equential or
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16Mbit
400mil
TSOP-44
2404T-7
2402T-10
2403T-10
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Untitled
Abstract: No abstract text available
Text: i^ Ä S ? is > in c . 4 M x 4 , 2 M x 8 , 1 M x 1 6 preliminary Data sheet 1 6 M b it E n h a n c e d S y n c h ro n o u s D R A M Overview Features • High Perform ance: CAS latency = 2 fcK Clock Frequency tcK2 Clock Cycle *AC2 Clock Access Tim e • P rogram m able Burst Length: 1,2,4,8,full-page
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400mil
2404T-7
TSOP-50
2402T-10
2403T-10
2404T-10
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Abstract: No abstract text available
Text: Order this document by MC16S044T3B/D SEMICONDUCTOR -TECHNICAL DATA 2 X 2M X 4 MC16S044T3B Product Previe 16M Synchronous DRAM Fam ily x 4 , x 8 2 x 1M x 8 MC16S084T3B
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MC16S044T3B/D
MC16S044T3B
MC16S084T3B
6S084T3B
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