variac
Abstract: ac variac CMSH3-40 mosfet High-Speed Switching 100mhz CTX03 DC DC converter 1A 400V TO 220 Package 120VDC KIT C9 SOT23 de0910 MURATA CAPACITOR DE0910E102M
Text: 19-2073; Rev 1; 10/01 MAX5022 Evaluation Kit The MAX5022 EV kit demonstrates high efficiency up to 80% at 262kHz switching frequency. This high efficiency is achieved by using a single transistor MOSFET , flyback-converter topology providing output power up to
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MAX5022
262kHz
4500VDC.
variac
ac variac
CMSH3-40
mosfet High-Speed Switching 100mhz
CTX03
DC DC converter 1A 400V TO 220 Package
120VDC KIT
C9 SOT23
de0910
MURATA CAPACITOR DE0910E102M
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variac
Abstract: CMSH3-40 MAX5021 400CV10FS 506-2MV02 CTX03-15256 PWM IC 6-PIN f1 dc variac DC DC converter 1A 400V TO 220 Package diode 40v 2A ultrafast
Text: 19-2073; Rev 1; 10/01 MAX5022 Evaluation Kit The MAX5022 EV kit demonstrates high efficiency up to 80% at 262kHz switching frequency. This high efficiency is achieved by using a single transistor MOSFET , flyback-converter topology providing output power up to
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MAX5022
85VAC
265VAC
120VDC
375VDC.
262kHz
variac
CMSH3-40
MAX5021
400CV10FS
506-2MV02
CTX03-15256
PWM IC 6-PIN f1
dc variac
DC DC converter 1A 400V TO 220 Package
diode 40v 2A ultrafast
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variac diode
Abstract: variac CTX03 15256 capacitor 0.01uf 400v CTX03 DE1E3KX102MA5BA01 CMSH3-40 circuit of 5v from 220 ac without transformer DE1E3KX102MA5B C9 SOT23
Text: 19-2073; Rev 3; 4/05 MAX5022 Evaluation Kit The MAX5022 evaluation kit EV kit is a fully assembled and tested 5W flyback-converter circuit board. The power supply is configured for an isolated +5VDC output voltage that can supply up to 1A of current. The line
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MAX5022
85VAC
265VAC
120VDC
375VDC.
262kHz
4500VDC.
variac diode
variac
CTX03 15256
capacitor 0.01uf 400v
CTX03
DE1E3KX102MA5BA01
CMSH3-40
circuit of 5v from 220 ac without transformer
DE1E3KX102MA5B
C9 SOT23
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PDF
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variac
Abstract: murata flyback CRT ac variac CTX03 15256 DC DC converter 1A 400V TO 220 Package CTX03 variac materials 120VDC KIT de0910 CMSH3-40
Text: 19-2073; Rev 2; 7/04 MAX5022 Evaluation Kit The MAX5022 evaluation kit EV kit is a fully assembled and tested 5W flyback converter circuit board. The power supply is configured for an isolated +5VDC output voltage that can supply up to 1A of current. The
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MAX5022
85VAC
265VAC
120VDC
375VDC.
262kHz
4500VDC.
variac
murata flyback CRT
ac variac
CTX03 15256
DC DC converter 1A 400V TO 220 Package
CTX03
variac materials
120VDC KIT
de0910
CMSH3-40
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IC 2073
Abstract: IRL 501 AC75 IC 766
Text: ^unynpN=mmm^+tm^yvxs> 2SC A SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR o wxmmm o mmmfamum 2073 Unit in mm 0&6+Q2 o Power Amplifier Applications, o Vertical Output Applications. 2 S A 9 4 0 ¿ H V 7 - U / y * ' K* t> t -to Complementary to 2SA940. *y~>,
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8SA94
8SA940.
100X100
IC 2073
IRL 501
AC75
IC 766
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PDF
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2SK1240-1243
Abstract: pa 2030a 2SK1241 2SK1240 2SK1242 2SK1243
Text: SANYO SEMICONDUCTOR CORP SEE 7T1707b D GOObTOO 3 T-3Ì -ZS 2SK1240-1243 HEMT Series 2072 N -C hannel AIGaAs/GaAs H etero J u n c tio n FET 2073 X-Band Very Low-l\loise Am p Applications 3186 F e a tu re s • Very low noise • High associated gain &
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2SK1240-1243
2SK1241
2SK1243
2SK1240-1243
pa 2030a
2SK1240
2SK1242
2SK1243
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PDF
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HEMT marking P
Abstract: No abstract text available
Text: SA NY O S E M I C O N D U C T O R CORP T W O T b SEE D OOObTOO 3 T-3Ì - IS 2SK1240-1243 HEMT Series 2072 2073 N-Channel AIGaAs/GaAs Hetero Junction FET X-Band Very Low-l\loise Amp Applications 3186 Features • Very low noise & ' High associated gain
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2SK1240-1243
2SK1241
2SK1243
HEMT marking P
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PDF
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l488
Abstract: MPS-A12 SCH2S70
Text: G E SOLID STATE DI I>F|3ñ7SDñl □ □ l ? clflS ñ Signal Transistors MPS-A12 Silicon Darlington Transistors TO-92 The G E/RCA MPS-A12 is a planar epitaxial passivated NPN silicon Darlington transistor designed for preamplifier input
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MPS-A12
MPS-A12
l488
SCH2S70
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PDF
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BFS20R
Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed
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a23Sb05
Q62702-F350
Q62702-F589
BFS20R
IC mark A09
BFS 65
Q62702-F350
Q62702-F589
a10 transistor
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PDF
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2N3439
Abstract: CP301
Text: Chip Numbering System Chip Part Numbering System This specification defines the method for chip packing and part number identification. example: Small Signal NPN High Voltage Transistor Chip, 2N3439, Waffle Packed. CP301 2N3439 CT PACKING METHOD SEE OPTIONS ON FOLLOWING PAGES
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2N3439,
CP301
2N3439
15-February
14-May
2N3439
CP301
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2073 transistor
Abstract: BFS20 siemens
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I EN 6 ES EL LSC HA F B F S 2 0 is an epitaxial N P N silicon planar R F transistor in TO 2 3 6 plastic package 2 3 A 3 D IN 41 869 , intended for use in film circuits.
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PDF
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STC2073
Abstract: STC2073D IC 2073
Text: STC2073D NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) TO-252 Ordering Information
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STC2073D
O-252
STC2073D
STC2073
KSD-T6O038-001
STC2073
IC 2073
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PDF
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Untitled
Abstract: No abstract text available
Text: STC2073D NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) TO-252
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STC2073D
O-252
STC2073
KSD-T6O038-001
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PDF
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ksd 250v 10a
Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623
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OT-23
KSC1623
812/KSC
SA812/KSC
KSA812/KSC1623
KSC1674/KSC1675
KSC838/KSC1676
KSC945/KSC815
ksd 250v 10a
B0X34C
ksd 202
ksa 3.3
KSC1330
IR 733
sa992
uhf fm 1845 IF
508AF
KSA733
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IN403
Abstract: No abstract text available
Text: FUNCTION GUIDE TRANSISTORS 2.1.2 lc D-PACK Type Transistors Device Type VcEO Condition Condition VCE satXV Condition TYP MAX V ce (V) lc (A) M M Hz) Pc (A) (V) NPN PNP MIN MAX 0.5 300 KSH 3 4 0 KSH 350 10 0.05 30 240 1 40 KSH29 KSH 3 0 4 1 15 75 1 0.125 0.7
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KSH29
KSH31
KSD1221
KSH44H11
KSH3055
KSH45H
IN403
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PDF
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c2539
Abstract: sef831 SEF630
Text: p ’ v • » • rV iC 't f* S G S-THÖNSON D7E D | 7ciaci23? 0010033 2 J 3C 173 3Q D i N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors.
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SEF630
SEF631
SEF832
SEF633
00V/150
SEF630/SEF631
300/us,
c2539
sef831
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PDF
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mmic
Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Text: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)
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LN-162315-H4
LN-141510-H4
LN-141526-H4
mmic
mwtinc
MWT-A970
"Microwave Diodes"
MWT-7 wirebond
MIL-PRF-38534 fine leak
MwT-LP770
MwT-170
LN-141510-H4
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PDF
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1038b
Abstract: 3161as MIL-STD-750 method 2073
Text: SENSITRON SEMICONDUCTOR DATASHEET 323, REV E.1 SS-100 SCREENING PROCEDURE DISCRETE SEMICONDUCTORS Not applicable for Axial & MELF Diodes All parts procured with JAN-S Screening shall be 100% screened in accordance with the following procedure. SCREEN NUMBER
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SS-100
MIL-STD-750
1038b
3161as
MIL-STD-750 method 2073
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PDF
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .
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i707L
T-31-n
2SC377
1947B
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PDF
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sj 2038
Abstract: ic sj 2038 scr gate drivers ic ec sanyo 2SD1628 p10j T35 ET sanyo sdk marking sdk
Text: SANYO SEMI CONDUCTOR 2SD1628 CORP ESE D 7 ^ 7 0 7 ^ 00G7S4L, T - 3 5 4 -15 % 2038 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications •X1731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor
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ci707b
000724b
2SD1628
250mm2
sj 2038
ic sj 2038
scr gate drivers ic
ec sanyo
p10j
T35 ET
sanyo sdk
marking sdk
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PDF
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TT 2076 transistor
Abstract: 2sc2052 TT 2076 tbb 2066 2SA934 2SA93 IN tt 2076 transistor s 2065 af Mix 2071
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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27MHz,
35dBm,
TT 2076 transistor
2sc2052
TT 2076
tbb 2066
2SA934
2SA93
IN tt 2076
transistor s 2065 af
Mix 2071
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PDF
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2sd1805a
Abstract: 2SD1805
Text: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers
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7T707tu
2SD1805
T-33-07
2SD1805-applied
2sd1805a
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PDF
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XM21A
Abstract: C-160304 2SA1338 2SC3392 A1338 00B7
Text: SANYO SEMICONDUCTOR CO RP 22E D 2SA1338, 2SC3392 • 7 ‘n7Q7fci 0 Q 0 7 0 4 Ö Q ■ T-37-15 T-3S-U P N P /N PN Epitaxial Planar Silicon Transistors 2018A High-Speed Switching Applications Features • Adoption of FBET process • High breakdown voltage; VCEO= ->50V
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2SA1338,
2SC3392
2018a
XM21A
2SA1338
XM21A
C-160304
2SA1338
A1338
00B7
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PDF
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2SA1344
Abstract: H7q7 2sc339 2SC3398 s2e transistor
Text: SANYO SEMICONDUCTOR CORP 5SE D0Q73SÔ D 2SA1344. 2SC3398 b • T - 3 7 - 13 T - 3S-I\ PNP/NPN Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances Rl=10ki2, R2=10kil 1236C Application! • Switching circuit, inverter circuit, interface circuit, driver circuit.
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2SA1344,
2SC3398
D0Q73SÃ
T-37-
T-35-H
1236C
10ki2,
10kfi,
10kii)
2SA1344
2SA1344
H7q7
2sc339
2SC3398
s2e transistor
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