Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    20A P MOSFET Search Results

    20A P MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    20A P MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RTJC

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H FDD8424H RTJC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H FDD8424H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H F085A F085A PDF

    FDD8424

    Abstract: No abstract text available
    Text: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H FDD8424 PDF

    FDD8424h

    Abstract: fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench
    Text: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H FDD8424H fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench PDF

    fdd8424H

    Abstract: fdd8424
    Text: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H fdd8424 PDF

    Mosfet 2011

    Abstract: FDD8424H_F085A Dual N & P-Channel
    Text: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H F085A F085A Mosfet 2011 FDD8424H_F085A Dual N & P-Channel PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H FDD8424H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original
    FDD8424H F085A PDF

    2n7625

    Abstract: 2N7625T3 IRHLYS797034CM IRHLYS77034CM IRHLYS793034CM 2N762
    Text: PD-97292 2N7625T3 IRHLYS797034CM 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) RDS(on) ID 0.072Ω -20A* IRHLYS793034CM 0.072Ω -20A*


    Original
    PD-97292 2N7625T3 IRHLYS797034CM O-257AA) IRHLYS797034CM IRHLYS793034CM O-257AA O-257AA. MIL-PRF-19500 2n7625 2N7625T3 IRHLYS77034CM IRHLYS793034CM 2N762 PDF

    2N7625T3

    Abstract: No abstract text available
    Text: PD-97292A 2N7625T3 IRHLYS797034CM 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) RDS(on) ID 0.074Ω -20A* IRHLYS793034CM 0.074Ω -20A*


    Original
    PD-97292A 2N7625T3 IRHLYS797034CM O-257AA) IRHLYS797034CM IRHLYS793034CM O-257AA O-257AA. MIL-PRF-19500 2N7625T3 PDF

    2N7625

    Abstract: No abstract text available
    Text: PD-97292A 2N7625T3 IRHLYS797034CM 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) RDS(on) ID 0.074Ω -20A* IRHLYS793034CM 0.074Ω -20A*


    Original
    PD-97292A O-257AA) IRHLYS797034CM IRHLYS793034CM 2N7625T3 O-257AA O-257AA. MIL-PRF-19500 2N7625 PDF

    IRHYS593034CM

    Abstract: IRHYS597034CM
    Text: PD-96911 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597034CM 100K Rads (Si) 0.087Ω IRHYS593034CM 300K Rads (Si) 0.087Ω ID -20A -20A


    Original
    PD-96911 O-257AA) IRHYS597034CM IRHYS597034CM IRHYS593034CM O-257AA 5M-1994. O-257AA O-257AA. PDF

    IRHYB597034CM

    Abstract: PD-9700 IRHYB593034CM
    Text: PD-97000 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYB597034CM 100K Rads (Si) 0.087Ω IRHYB593034CM 300K Rads (Si) 0.087Ω ID -20A -20A


    Original
    PD-97000 O-257AA) IRHYB597034CM IRHYB597034CM IRHYB593034CM O-257AA 5M-1994. O-257AA O-257AA. PD-9700 PDF

    IRHYS593Z30CM

    Abstract: IRHYS597Z30CM 20A400
    Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*


    Original
    PD-96899 O-257AA) IRHYS597Z30CM IRHYS597Z30CM IRHYS593Z30CM O-257AA 5M-1994. O-257AA O-257AA. 20A400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*


    Original
    PD-96899 O-257AA) IRHYS597Z30CM IRHYS597Z30CM IRHYS593Z30CM O-257AA 5M-1994. O-257AA O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96911 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597034CM 100K Rads (Si) 0.087Ω IRHYS593034CM 300K Rads (Si) 0.087Ω ID -20A -20A


    Original
    PD-96911 O-257AA) IRHYS597034CM IRHYS597034CM IRHYS593034CM O-257AA 5M-1994. O-257AA O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: MQFL-28-06S Single Output H igH R eliability DC-DC C onveRteR 16-40V 16-50V 6.0V 20A 90% @ 10A / 89% @ 20A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters


    Original
    MQFL-28-06S 6-40V 6-50V 005-2MQ060S PDF

    Untitled

    Abstract: No abstract text available
    Text: MQFL-28VE-05S Single Output H igH R eliability DC-DC C onveRteR 16-70V 5.5-80V 5.0V 20A 89% @ 10A / 88% @ 20A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters


    Original
    MQFL-28VE-05S 6-70V PDF

    Untitled

    Abstract: No abstract text available
    Text: MQFL-28V-05S Single Output H igH R eliability DC-DC C onveRteR 16-40V 5.5-50V 5.0V 20A 89% @ 10A / 89% @ 20A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters


    Original
    MQFL-28V-05S 6-40V 005-2MQV50S PDF

    Untitled

    Abstract: No abstract text available
    Text: MQHL-28-1R8S Single Output H igH R eliability DC-DC C onveRteR 16-40V 16-50V 1.8V 20A 83% @ 10A / 82% @ 20A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters


    Original
    MQHL-28-1R8S 6-40V 6-50V PDF

    Untitled

    Abstract: No abstract text available
    Text: MQFL-28-06S Single Output H igH R eliability DC-DC C onveRteR 16-40V 16-50V 6.0V 20A 90% @ 10A / 89% @ 20A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters


    Original
    MQFL-28-06S 6-40V 6-50V 005-2MQ060S PDF

    Untitled

    Abstract: No abstract text available
    Text: MQFL-28VE-05S Single Output H igH R eliability DC-DC C onveRteR 16-70V 5.5-80V 5.0V 20A 89% @ 10A / 88% @ 20A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters


    Original
    MQFL-28VE-05S 6-70V PDF