Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
11-Mar-11
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PDF
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Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4114DY
2002/95/EC
Si4114DY-T1-E3
Si4114DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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RGP02-15
Abstract: ignition module
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency
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RGP02-12E
RGP02-20E
MIL-S-19500
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
30trademarks
RGP02-15
ignition module
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PDF
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RGP02-15
Abstract: DO-204AL J-STD-002 RGP02-12E RGP02-20E ignition module
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency
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Original
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RGP02-12E
RGP02-20E
MIL-S-19500
22-B106
DO-204AL
DO-41)
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
RGP02-15
DO-204AL
J-STD-002
RGP02-20E
ignition module
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VARISTOR TNR 560
Abstract: 20e221 20E431K 20E-471K 20E471K 20E-821K 20E-241K
Text: TNR E SERIES ● 20E Series Model Number TNR20E221K TNR20E241K TNR20E271K TNR20E391K TNR20E431K TNR20E471K TNR20E511K TNR20E681K TNR20E751K TNR20E821K TNR20E911K TNR20E102K TNR20E112K Maximum Applied Voltage ACrms V DC(V) 140 150 175 250 275 300 315 420
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TNR20E221K
TNR20E241K
TNR20E271K
TNR20E391K
TNR20E431K
TNR20E471K
TNR20E511K
TNR20E681K
TNR20E751K
TNR20E821K
VARISTOR TNR 560
20e221
20E431K
20E-471K
20E471K
20E-821K
20E-241K
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VARISTOR TNR 560
Abstract: 20E911K 20E431K 20E821K 20e221
Text: TNR E SERIES ● 20E Series Model Number TNR20E221K TNR20E241K TNR20E271K TNR20E391K TNR20E431K TNR20E471K TNR20E511K TNR20E681K TNR20E751K TNR20E821K TNR20E911K TNR20E102K TNR20E112K Maximum Applied Voltage ACrms V DC(V) 140 150 175 250 275 300 315 420
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Original
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TNR20E221K
TNR20E241K
TNR20E271K
TNR20E391K
TNR20E431K
TNR20E471K
TNR20E511K
TNR20E681K
TNR20E751K
TNR20E821K
VARISTOR TNR 560
20E911K
20E431K
20E821K
20e221
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20E911K
Abstract: 511 VARISTOR
Text: TNR E SERIES ● 20E Series Model Number TNR20E221K TNR20E241K TNR20E271K TNR20E391K TNR20E431K TNR20E471K TNR20E511K TNR20E681K TNR20E751K TNR20E821K TNR20E911K TNR20E102K TNR20E112K Maximum Applied Voltage ACrms V DC(V) 140 150 175 250 275 300 315 420
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Original
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TNR20E221K
TNR20E241K
TNR20E271K
TNR20E391K
TNR20E431K
TNR20E471K
TNR20E511K
TNR20E681K
TNR20E751K
TNR20E821K
20E911K
511 VARISTOR
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PDF
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capacitor charge indicator
Abstract: 6-DC-20-4 dc20 light emitting diode DC201
Text: 20 SEGMENT BAR GRAPH ARRAYS Kingbright DC-20/20H DC-20/20E DC-20/20G DC-20/20Y DC-20/20SR Description Features lSUITABLE lLOW Phosphide Red Light Emitting Diode. CURRENT OPERATION. lEXCELLENT lWIDE lEND The Bright Red source color devices are made with Gallium
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DC-20/20H
DC-20/20E
DC-20/20G
DC-20/20Y
DC-20/20SR
6-DC-20-2
6-DC-20-3
6-DC-20-4
6-DC-20-5
capacitor charge indicator
6-DC-20-4
dc20
light emitting diode
DC201
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PDF
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10 20e diode
Abstract: No abstract text available
Text: FRD Type：KCF60A20 F60A20E 20E •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating
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TypeKCF60A20
F60A20E
KCF6OA20E
10 20e diode
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Untitled
Abstract: No abstract text available
Text: FRD Type：KCF60A20 F60A20E 20E •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating
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TypeKCF60A20
F60A20E
KCF6OA20E
KCF60A20E
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Untitled
Abstract: No abstract text available
Text: ADE-20e-234A Z) HVU363A Variable Capacitance Diode for TV tuner HITACHI Features Rev. 1 Nov. 1994 Outline • High capacitance ratio.(n=15.0Typ) • Low series resistance (rs=0.75Qmax) and good C-V linearity. • Ultra small Eesin Eackage (URP) is suitable for
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ADE-20e-234A
HVU363A
75Qmax)
HVU363A
470MHz
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5082-2815
Abstract: No abstract text available
Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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OCR Scan
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44475fi4
1N5711
1N5712
1N5711,
1N5712,
Figure12.
5082-2815
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5082-2815
Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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OCR Scan
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0005fc
1N5711
1N5712
1N5711,
1N5712,
i712-
1n57h
1n5712
5082-2815
5082-2970
5082-2805
5082-2813
5082-2308
5082-2804
diode+hp+2835+schottky
5082-2826
5082-2997
5082-2912
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CD5383B
Abstract: COMPENSATED DEVICES INC cd5383 1N5333B CD5333B CD5336B CD5337B CD5338B CD5339B CD5340B
Text: COMPENSATED DEVICES INC 20E D • S3DSSSM GQGQ4Ï4 T T -II-O S' ZENER DIODE CHIPS CD5333B ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE ELECTRICALLY EQUIVALENT TO 1N5333B THRU 1N5388B thru 5 W ATT CAPABILITY WITH PROPER HEAT SINKING CD5388B COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
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1N5333B
CD5333B
CD5388B
CD5333B
CDS334B
CD533SB
CD5336B
CD5337B65-7379
CD5383B
COMPENSATED DEVICES INC
cd5383
CD5337B
CD5338B
CD5339B
CD5340B
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PDF
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CDLL4460
Abstract: COMPENSATED DEVICES INC melf ll41 CDLL4461 CDLL4462 CDLL4463 CDLL4464 CDLL4465 CDLL4467 CDLL4468
Text: I COMPENSATED DEVICES INC ' 20E D 53Q5SS4 QQGQ3QÔ T r - h-I s' • 1.5 WATT ZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICALLY BONDED C CDLL4496 • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS -65°C to +175°C O p e ra tin g Tem perature:
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E3G255l4
CDLL4460
CDLL4496
200mA
10mV//Â
DO-213AA
DO-213AB
CDLL4460
COMPENSATED DEVICES INC
melf ll41
CDLL4461
CDLL4462
CDLL4463
CDLL4464
CDLL4465
CDLL4467
CDLL4468
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PDF
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CDLL4460
Abstract: CDLL4461 CDLL4462 CDLL4463 CDLL4464 CDLL4465 CDLL4467 CDLL4468 CDLL4496
Text: I COMPENSATED DEVICES INC ' 20E D 53Q5SS4 QQGQ3QÔ T r - h-I s' • 1.5 WATT ZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICALLY BONDED C CDLL4496 • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS -65°C to +175°C O p e ra tin g Tem perature:
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OCR Scan
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E3G255l4
CDLL4460
CDLL4496
200mA
10mV//Â
DO-213AB,
CDLL4460
CDLL4461
CDLL4462
CDLL4463
CDLL4464
CDLL4465
CDLL4467
CDLL4468
CDLL4496
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Untitled
Abstract: No abstract text available
Text: PERFORMANCE SEMICO NDU CTOR 20E D 70^55^7 Q00Ü5S3 2 P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS A - :- FEATURES Full CMOS, 6T Cell • Single 5V±10% Power Supply High Speed (Equal Access and Cycle Times)
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P4C116/P4C116L
P4C1161Output
MIL-STD-883C
P4C116/L
-15PC
-15SC
-15DC
-20PC
-20SC
-20DM
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RUR15100
Abstract: RUR1590 RUR1580 diode rur15100 RUR1570
Text: / HARRIS SEMICOND SECTOR SbE D •■ , R U R 1 5 70 1580 1 U R 1 5 9 0 /1 5 1 0 0 fi HARRIS ■HAS 15A Ultrafast Diode With Soft Recovery Characteristic 4302271 004230b 20e! August 1991 o B '- n Features • Ultrafast with Soft Recovery Characteristic (trr < 100ns
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M302271
100ns)
RUR1580,
RUR1590,
RUR15100
004E3flÃ
RUR1590
RUR1580
diode rur15100
RUR1570
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DC 205
Abstract: No abstract text available
Text: 20 SEGMENT BAR GRAPH ARRAYS DC-20/20H DC-20/20E DC-20/20G DC-20/20Y DC-20/20SR Features Description •SUITABLE FOR LEVEL INDICATORS. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. •LO W CURRENT OPERATION. The Green source color devices are made with Gallium
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DC-20/20H
DC-20/20G
DC-20/20SR
DC-20/20E
DC-20/20Y
6-DC-20-4
6-DC-20-5
DC 205
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV32N 20E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N-Channel Enhancement-Mode Silicon Gate
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OCR Scan
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MTV32N20E/D
TV32N
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