A0-A21
Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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Original
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M58WR064ET
M58WR064EB
54MHz
VFBGA56
A0-A21
CR10
M58WR064EB
M58WR064ET
VFBGA56
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PDF
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PA66-GF35
Abstract: PA66GF35
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR KEYING OPTIONS 2:1 KEYING OPTION B DWN APVD D1 REV PER ECR-10-012906 24JUN2010 VSS DZ D2 REVISED PER ECO-14-008755 11JUN2014
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Original
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ECO-14-008755
11JUN2014
24JUN2010
ECR-10-012906
20JUN2002
PA66-GF35
PA66GF35
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PDF
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PSD3200
Abstract: BV-24 PSD834 ST24C21
Text: µPSD3200 FAMILY Flash Programmable System Device with 8032 Microcontroller Core PRODUCT PREVIEW FEATURES SUMMARY • The µPSD3200 Family combines a Flash PSD architecture with an 8032 microcontroller core ■ ■ The µPSD3200 Family of Flash PSDs features
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Original
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PSD3200
16-bit
BV-24
PSD834
ST24C21
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PDF
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Untitled
Abstract: No abstract text available
Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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Original
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M58WR064ET
M58WR064EB
54MHz
VFBGA56
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PDF
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Untitled
Abstract: No abstract text available
Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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Original
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M58WR064ET
M58WR064EB
54MHz
VFBGA56
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PDF
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