K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

7C192-12

Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

Contextual Info: CY7C441 _ CY7C443 Clocked 512 x 9, 2K x 9 FIFOs Features Functional Description • 512 x 9 CY7C441 and 2,048 x 9 (CY7C443) FIFO buffer memory T h e CY7C441 an d CY7C443 are high­ speed, low-power, first-in first-out (F IF O )

PLDC18G8

Abstract: T1216 416rp Cypress 12h6 16v8 programming 15WC
Contextual Info: PLDC18G8 CYPRESS SEMICONDUCTOR CMOS Generic 20-Pin Programmable Logic Device • Generic architecture to replace >tandard logic functions including; 10H8, 1 2 H 6 ,1 4 H 4 ,1 6 H 2 ,1 0 L 8 ,1 2 U , 14L4, 1 6 L 2 ,1 0 P 8 ,1 2 P 6,14P 4,1«P 2,16H 8, 16L 8,16P 8,16R 8,16R 6,16R 4,16R P 8,

cen 496

Contextual Info: CY7C441 _ CY7C443 SEMICONDUCTORClocked 512 x 9, 2K x 9 FIFOs Functional Description • 512 x 9 CY7C441 and 2,048 x 9 (CY7C443) FIFO buffer memory T h e CY7C441 an d CY7C443 are high­ speed, low-power, first-in first-out (F IF O )

Contextual Info:  7& 3DUDOOHO 3520. .[  )HDWXUHV ‡ )DVW5HDG$FFHVV7LPHQV ‡ )DVW%\WH:ULWHPV ‡ 6HOI7LPHG%\WH:ULWH&\FOH ‡ ‡ ‡ ‡ ‡ ‡ ‡ ±,QWHUQDO$GGUHVVDQG'DWD/DWFKHV ±,QWHUQDO&RQWURO7LPHU ±$XWRPDWLF&OHDU%HIRUH:ULWH 'LUHFW0LFURSURFHVVRU&RQWURO

Contextual Info: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM

33AO

Contextual Info: ss CY7C170A B>'ss c y p r e s s SEMICONDUCTOR — 4096 x 4 Static RAV RAM Features Functional Description • CMOS for optimum speed/power The CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is provided by an active LOW chip select

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: PALC22V10B CYPRESS SEMICONDUCTOR • Advanced second generation PAL ar­ chitecture • Low power — 90 mA max. standard — 100 mA max. military Functional Description — “15” and “20” military 10/15 ns tc o 10/17 ns ts 15/20 ns tpo 50/31 MHz Up to 22 input terms and 10 outputs

C2021 m

Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
Contextual Info: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power

IC ccu 2030

Contextual Info: CY7C441 CY7C443 PRELIM INARY CYPRESS .-F ' SEMICONDUCTOR Functional D escription 512 x 9 CY7C441 a n d 2,04« x 9 (CY7C443) F IF O b u ffer memory H igh-speed 70-M Hz o p eratio n S u p p o rts free-ru n n in g 50% duty cycle clock inputs Empty, A lm ost Em pty, a n d A lm ost

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power

Contextual Info: PALC22V10B CYPRESS SEMICONDUCTOR • Advanced second generation PAL ar­ chitecture • Low power — 90 mA max. standard — 100 mA max. military Functional Description — “15” and “20” military 10/15 ns tc o 10/17 ns ts 15/20 ns tpD 50/31 MHz Up to 22 input terms and 10 outputs

PALC22V10B-20KMB

Abstract: PALC22V10B-20WMB PALC22V10B20WMB palc22v10b-15hc V103-6 ecl pal 16 macrocells PALC22V10B palc22v10b-15jc cypress 22V10b PALC22V10B-15KMB
Contextual Info: CYPRESS SEMI CONDUCTOR b£E T> SS f i T b b E QG1D3Ô3 2Mb CYP PALC22V10B CYPRESS SEMICONDUCTOR • Advanced second generation PAL ar­ chitecture • Low power — 90 m A max. standard — 100 mA max. military • CMOS EPROM technology for repro­ grammability

7c198

Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
Contextual Info: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac­

CY7C128A SRAM

Abstract: 7C128A-55 128a
Contextual Info: _ CY7C128A ^ S fcO N D U d O R 2048 x 8 Static R/W RAM Features • Capable o f w ithstanding greater than 2001V electrostatic discharge • Automatic power-down when deselected • V ih o f 2.2V • CMOS for optimum speed/power Functional Description

CY7CI99-55KMB

Abstract: 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 CY7C198 CY7C199 cy7c199-25vc
Contextual Info: CY7C198 CY7C199 CYPRESS -= s SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power ■ High speed — 25 ns • h ow active power The CY7C198 and CY7C199 are highperformance CMOS static RAM s orga­

Contextual Info: CY7C187A 5T CYPRESS SEMICONDUCTOR 65,536 x 1 S tatic R /W R A M Features Functional Description • Automatic power-down when deaelected The CY7C187A is a high-performance CMOS static RAM organized as 65,536 words by 1 b it Easy memory expansion is provided by an active LOW chip enable

HI401

Abstract: 7C196 CY7C194 CY7C195 CY7C196
Contextual Info: MbE D • asaibt.2 D D O b b b M 2 n CYP CYPRESS SEMICONDUCTOR CYPRESS W SEMICONDUCTOR Features Automatic power-down when deselected Output Enable ÖE feature (7CX95 and7C196) CMOS for optimum speed/power Highspeed — t^A = 25 ns Low active power — 880 mW

CTO 2267

Abstract: A10C CY7C170A A11C
Contextual Info: CYPRESS SEMICONDUCTOR MbE D T ^ 'iy o fe . £5 ’¡ r ES&^hhE QGObSEê S B C Y P • CYPRESS SEMICONDUCTOR CY7C170A 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • Highspeed — t*A = 15 ns — tACS = 10 ns • Low active power

Contextual Info: es Br Sm QYPRESS 'W SEMICONDUCTOR PAL C20 Series = Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 — tpi> = 20 ns • High reliability — Proven EPROM technology — > 1500V input protection from elec­ trostatic discharge — 100% AC and DC tested — 10% power supply tolerances