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    20N06HL ON SEMICONDUCTOR Search Results

    20N06HL ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    20N06HL ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n06hl

    Abstract: 20n-06hl 20N 06hl 06HL *20N06HL 20N06H 06hl marking 20n06hl ON Semiconductor MTD20N06HDL/20n06hl
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original     		PDF MTD20N06HDL MTD20N06HDL/D 20n06hl 20n-06hl 20N 06hl 06HL *20N06HL 20N06H 06hl marking 20n06hl ON Semiconductor MTD20N06HDL/20n06hl

    20n06hl

    Abstract: 20N 06hl 06HL 20n-06hl 06hl marking mosfet 20n 20N06H 20n06 MTD20N06HDL-D 20n06hl ON Semiconductor
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original     		PDF MTD20N06HDL MTD20N06HDL/D 20n06hl 20N 06hl 06HL 20n-06hl 06hl marking mosfet 20n 20N06H 20n06 MTD20N06HDL-D 20n06hl ON Semiconductor

    20n06hl

    Abstract: 06hlg 20n-06hl 20n06 20N06H MTD20N06HDLT4 AN569 MTD20N06HDL MTD20N06HDLT4G
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original     		PDF MTD20N06HDL MTD20N06HDL/D 20n06hl 06hlg 20n-06hl 20n06 20N06H MTD20N06HDLT4 AN569 MTD20N06HDL MTD20N06HDLT4G

    20n06hl

    Abstract: 06HLG 20n-06hl 20n06 AN569 MTD20N06HDL MTD20N06HDLT4 MTD20N06HDLT4G DIODE y 12 transistor code 458 055
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original     		PDF MTD20N06HDL MTD20N06HDL/D 20n06hl 06HLG 20n-06hl 20n06 AN569 MTD20N06HDL MTD20N06HDLT4 MTD20N06HDLT4G DIODE y 12 transistor code 458 055

    20n06hl

    Abstract: 20N06H MTD20N06HDL 20n06 AN569 MTD20N06HDL1 MTD20N06HDLT4 SMD310 20n-06hl 20n06hl ON Semiconductor
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast


    Original     		PDF MTD20N06HDL r14525 MTD20N06HDL/D 20n06hl 20N06H MTD20N06HDL 20n06 AN569 MTD20N06HDL1 MTD20N06HDLT4 SMD310 20n-06hl 20n06hl ON Semiconductor

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl