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    210 SOP4 Search Results

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    AQY212S

    Abstract: AQY21 AQY212SX AQY210S AQY210SX AQY210SZ AQY212SZ AQY214S AQY214SX
    Text: GU SOP 1 Form A AQY21PS TESTING Miniature SOP4-pin type of 60V/350V/400V load voltage 4.4 .173 2.1 .083 4.3 .169 mm inch 1 4 2 3 GU SOP 1 Form A (AQY21PS) FEATURES TYPICAL APPLICATIONS 1. Controls low-level analog signals PhotoMOS relays feature extremely low


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    PDF AQY21 0V/350V/400V a212S AQY214S AQY210S AQY214S, AQY212S AQY212S AQY212SX AQY210S AQY210SX AQY210SZ AQY212SZ AQY214S AQY214SX

    AQY21S

    Abstract: AQY212SX AQY212SZ aqy210 AQY210SX aqy214 aqy212 AQY212S
    Text: GU SOP 1 Form A AQY21S TESTING Miniature SOP4-pin type of 60V/350V/400V load voltage GU SOP 1 Form A (AQY21S) AQY21S 4.4 .173 2.1 .083 4.3 .169 CAD Data mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Controls low-level analog signals PhotoMOS relays feature extremely low


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    PDF AQY21S) 0V/350V/400V AQY21S AQY212S AQY214S, AQY210S AQY212S AQY214S AQY21S AQY212SX AQY212SZ aqy210 AQY210SX aqy214 aqy212

    AQY212SX

    Abstract: No abstract text available
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✩✦ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU SOP 1 Form A AQY21❍S TESTING Miniature SOP4-pin type of 60V/350V/400V load voltage GU SOP 1 Form A (AQY21❍S) 4.4 .173 2.1 .083


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    PDF AQY21S) 0V/350V/400V AQY212S AQY214S, AQY210S AQY212S AQY212SX

    Untitled

    Abstract: No abstract text available
    Text: Miniature SOP4-pin type of 60V/350V/400V load voltage GU SOP 1 Form A AQY21❍S 4.4 .173 2.1 .083 4.3 .169 mm inch 1 4 2 3 RoHS compliant FEATURES TYPICAL APPLICATIONS 1. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of


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    PDF 0V/350V/400V AQY21â equipm60 AQY214S AQY210S AQY214S, AQY212S

    aqy212s

    Abstract: AQY21S AQY212SX AQY214 AQY21 AQY210SX AQY210S AQY210SZ AQY212SZ AQY214S
    Text: GU SOP 1 Form A AQY21❍S TESTING Miniature SOP4-pin type of 60V/350V/400V load voltage GU SOP 1 Form A (AQY21❍S) 4.4 .173 2.1 .083 4.3 .169 mm inch 1 4 2 3 Compliance with RoHS Directive FEATURES TYPICAL APPLICATIONS 1. Controls low-level analog signals


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    PDF AQY21S) 0V/350V/400V AQY214S AQY210S AQY214S, AQY212S aqy212s AQY21S AQY212SX AQY214 AQY21 AQY210SX AQY210S AQY210SZ AQY212SZ AQY214S

    ASCTB136E

    Abstract: No abstract text available
    Text: GU SOP 1 Form A AQY21❍S TESTING Miniature SOP4-pin type of 60V/350V/400V load voltage GU SOP 1 Form A (AQY21❍S) 4.4 .173 2.1 .083 4.3 .169 mm inch 1 4 2 3 RoHS compliant FEATURES TYPICAL APPLICATIONS 1. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of


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    PDF AQY21S) 0V/350V/400V AQY212S AQY214S, AQY210S AQY214S AQY214S ASCTB136E

    Vsp8 Package dimension

    Abstract: PLCC28 layout QFP32-J2 QFP80-C2 SC82AB SC88A SSOP10 SSOP14 JT-100 SSOP20
    Text: THERMAL RESISTANCE This manual explains about measurement procedures and definitions of thermal resistance. •INTRODUCTION Generally, the life of a device would decrease to half, and the failure rate would double whenever Junction Temperature, Tj, goes up by


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    PDF OT23-5 OT23-6 SC88A SC82AB Vsp8 Package dimension PLCC28 layout QFP32-J2 QFP80-C2 SC82AB SC88A SSOP10 SSOP14 JT-100 SSOP20

    emp8 Package dimension

    Abstract: TO252 thermal character SOT23-5 VH PAT-1 QFP80-C2 SC82AB SC88A SSOP10 SSOP14 SSOP16
    Text: THERMAL RESISTANCE This manual explains about measurement procedures and definitions of thermal resistance. •INTRODUCTION Generally, the life of a device would decrease to half, and the failure rate would double whenever Junction Temperature, Tj, goes up by


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    PDF OT23-5 OT23-6 SC88A SC82AB emp8 Package dimension TO252 thermal character SOT23-5 VH PAT-1 QFP80-C2 SC82AB SC88A SSOP10 SSOP14 SSOP16

    TSSOP54

    Abstract: emp8 Package EPFFP6-A2 dmp8 Package dimension tssop-54 HSOP-8 SC82AB SC88A SSOP14 TVSP10
    Text: THERMAL RESISTANCE This manual explains about measurement procedures and definitions of thermal resistance. •INTRODUCTION Generally, the life of a device would decrease to half, and the failure rate would double whenever Junction Temperature, Tj, goes up by


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    PDF OT23-5 OT23-6 SC88A SC82AB TSSOP54 emp8 Package EPFFP6-A2 dmp8 Package dimension tssop-54 HSOP-8 SC82AB SC88A SSOP14 TVSP10

    H12 SOT23

    Abstract: TO252 thermal character PAT-1 QFP80-C2 TVSP10 base resistance for SOT23 IC chip 555 SC82AB SC88A SSOP10
    Text: THERMAL RESISTANCE This manual explains about measurement procedures and definitions of thermal resistance. •INTRODUCTION Generally, the life of a device would decrease to half, and the failure rate would double whenever Junction Temperature, Tj, goes up by


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    PDF OT23-5 OT23-6 SC88A SC82AB H12 SOT23 TO252 thermal character PAT-1 QFP80-C2 TVSP10 base resistance for SOT23 IC chip 555 SC82AB SC88A SSOP10

    SC82AB

    Abstract: SC88A TVSP10 VSP10 QFP100-U1 SC82A pat2
    Text: 熱抵抗について 本書ではお客様におけます熱設計時のご参考のために、弊社での熱抵抗に関する各パラメータの定義、 測定方法などについて解説いたします。 •背景 一般的に素子のジャンクション温度(Tj)が 10℃上がる毎にデバイスの寿命は約半分になり、故障率は約2倍になるとい


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    PDF 175Tj EIA/JESD51-3/-5/-7 25mmA0 EIA/JESD51-3/-5/-7 2mm35um) 201ja OT23-5 OT23-6 SC88A SC82AB SC82AB SC88A TVSP10 VSP10 QFP100-U1 SC82A pat2

    jedec QFP80

    Abstract: SC82AB SC88A TVSP10 VSP10 pat2
    Text: 熱抵抗について 本書ではお客様におけます熱設計時のご参考のために、弊社での熱抵抗に関する各パラメータの定義、 測定方法などについて解説いたします。 •背景 一般的に素子のジャンクション温度(Tj)が 10℃上がる毎にデバイスの寿命は約半分になり、故障率は約2倍になるとい


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    PDF 175Tj EIA/JESD51-3/-5/-7 25mmA0 EIA/JESD51-3/-5/-7 2mm35um) 201ja OT23-5 OT23-6 SC88A SC82AB jedec QFP80 SC82AB SC88A TVSP10 VSP10 pat2

    Test-Element-Group

    Abstract: PAT-3 SC82AB SC88A SSOP10 SSOP14 SSOP16 TVSP10 VSP10 P-CSP-24
    Text: 熱抵抗について 本書ではお客様におけます熱設計時のご参考のために、弊社での熱抵抗に関する各パラメータの定義、 測定方法などについて解説いたします。 •背景 一般的に素子のジャンクション温度(Tj)が 10℃上がる毎にデバイスの寿命は約半分になり、故障率は約2倍になるとい


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    PDF 175Tj EIA/JESD51-3/-5/-7 25mmA0 EIA/JESD51-3/-5/-7 2mm35um) OT23-5 OT23-6 SC88A SC82AB O-252 Test-Element-Group PAT-3 SC82AB SC88A SSOP10 SSOP14 SSOP16 TVSP10 VSP10 P-CSP-24

    Test-Element-Group

    Abstract: Thermal Test-Element-Group SC82AB SC88A SSOP10 SSOP14 SSOP16 TVSP10 VSP10 JESD51-52
    Text: 熱抵抗について 本書ではお客様におけます熱設計時のご参考のために、弊社での熱抵抗に関する各パラメータの定義、 測定方法などについて解説いたします。 •背景 一般的に素子のジャンクション温度(Tj)が 10℃上がる毎にデバイスの寿命は約半分になり、故障率は約2倍になるとい


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    PDF 175Tj EIA/JESD51-3/-5/-7 25mmA0 EIA/JESD51-3/-5/-7 2mm35um) 200ja OT23-5 OT23-6 SC88A SC82AB Test-Element-Group Thermal Test-Element-Group SC82AB SC88A SSOP10 SSOP14 SSOP16 TVSP10 VSP10 JESD51-52

    EQFN12-E2

    Abstract: H12 SOT23 SC82AB SC88A TVSP10 VSP10 JESD51-3
    Text: 关于热阻 本资料,作为客户热量设计时的参考,关于本公司的热阻的各参数定义测量方法等在此进行解说。 •背景 通常,元件的结温 Junction Temperature (Tj)每上升 10℃,器件的寿命就会大约减为一半,故障率也


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    PDF EIA/JESD51-3/-5/-7 25mmA0 EIA/JESD51-3/-5/-7 OT23-5 OT23-6 SC88A SC82AB O-252 EQFN12-E2 H12 SOT23 SC82AB SC88A TVSP10 VSP10 JESD51-3

    tlp285

    Abstract: TLP285-GB E67349 EN60747-5-2
    Text: TLP285 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP285 Power Supplies Programmable Controllers Hybrid ICs Unit in mm TLP285 The Toshiba TLP285 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP285 is housed in the SOP4


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    PDF TLP285 TLP285 3750Vrms) TLP285-GB E67349 EN60747-5-2

    MR4000

    Abstract: FTO-220AG s4vb 10 S4VB data sheet STO-220 MR4000 equivalent s4vb AX078 STO-220 Shindengen s4vb shindengen
    Text: Title: 半導体 p42 -52_表3.ec5 Page:42 品名表記方法と梱包形態概要 1. ご発注時の表記方法 ご発注頂く際には製品名の後に仕様コード(及びフォーミングコード)を記載ください。 例1 S1VB60 の 7001


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    PDF S1VB60 S1VB60-7001 D2L20U 7002P5 D2L20U-7002P5 F071-8 P44-45 AX057 AX078 MR4000 FTO-220AG s4vb 10 S4VB data sheet STO-220 MR4000 equivalent s4vb AX078 STO-220 Shindengen s4vb shindengen

    AQY212SX

    Abstract: AQY212SZ AQY214SX AQY21 AQY210S AQY210SX AQY210SZ AQY212S AQY214S AQY214SZ
    Text: GU PhotoMOS AQY21❍S TESTING Super miniature design, SOP(1 Form A) 4-pin type Controls load voltage 60V, 350V, 400V 4.3 .169 The device comes in a super-miniature SO package 4-Pin type measuring (W)4.3 x (L)4.4 × (H)2.1 mm (W).169 × (L).173 × (H).083 inch —approx. 70% of


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    PDF AQY21S) AQY212S AQY210S AQY214S AQY212SX AQY212SZ AQY214SX AQY21 AQY210S AQY210SX AQY210SZ AQY212S AQY214S AQY214SZ

    p421 coupler

    Abstract: p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic
    Text: 4. Supplementary Information 4–1 Current Transfer Ratio CTR , LED Trigger Current (IFT) Ranking and Marking Unit: mm Standard rank classifications are applied for the CTR of transistor-type photocouplers and for the IFT of MOSFET, SCR, Triac-type photocouplers. Indicative product markings corresponding to rank names are as shown below.


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    PDF TLP180 TLP181 TLP280 TLP280-4 TLP281 TLP281-4 TLP321 TLP321-2/-3/-4 IEC435/ IEC65/ p421 coupler p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic

    Untitled

    Abstract: No abstract text available
    Text: Common Precautions for MOS FET Relays WARNING Be sure to turn OFF the power when wiring the Relay, otherwise an electric shock may be received. Do not touch the charged terminals of the Relay, otherwise an electric shock may be received. Precautions for Safe Use


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    PDF K245-E1-01

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3S4541A CMOS LSI LC331632M-70/80/10/12, ML-70/80/10 No. 5K 4541A S A \Y O 512 K 32768 words x 16 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC331632 series is composed of pseudo static RAM th a t o p e ra te on a sin g le 5 V p o w er su p p ly and are


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    PDF EN3S4541A LC331632M-70/80/10/12, ML-70/80/10 LC331632 40-pin 3195-SOP4Q A01S93 LC331632M, l/09t0V0l6

    Z101

    Abstract: No abstract text available
    Text: Ordering num ber: ENJs?4541A CMOS LSI No. LC331632M-70/80/10/12, ML-70/80/10 4541A SAW O 512 K 32768 words x 16 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC331632 series is composed of pseudo static RAM th a t o p erate on a sin g le 5 V p o w er supply and are


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    PDF LC331632M-70/80/10/12, ML-70/80/10 LC331632 40-pin 3195-SQP40 450mil) TSOP44 Z101

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


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    PDF J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576

    4541B

    Abstract: N4541B 65-VV
    Text: KNa N4541B E ^ H 5 8 - a - X '» & 4 5 4 1 A m rm A /0 .& 4 5 4 1 B -a -x 30796 £ L * * T < * 3V \ LC331632M -70/80/10/12-5,2°ks 327687_ ft* ,#• w i t i , LC331632MIÍ. 3 2 7 6 8 7 - H X lSK '-y ^ ¿ 'y 1J5 ^ * , 1 * + ,* '> * T?« Jfc+ * >« í 'J -fe * fc « CMOB® B <DJ*ffl fc ¿ 0 . * 8 1 , » « * , f t ¡B « 1 | g § |l * ' f


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    PDF N4541B 4541B WK4541A LC331632M-70/80/10/12 LC331632M& LC331632MI* 327687-KXl6fc> LC331632M 100ny 4541B N4541B 65-VV