MAX2690
Abstract: LNA SOT23-6 PWM controller sot23-6 max2471 MAXIM Integrated AD CSP 5 MAX2310 MAX2338 MAX2387 MAX2388 MAX2389
Text: CELLULAR/PCS PHONES Data Sheets • Applications Notes Free Samples • W-CDMA / 2GHz 8mA 3 m 11 LNA_IN 10 GND m x 3m LNA 2110MHz 2.7V 2170MHz BIAS_SET m MAX2387/MAX2388/MAX2389 ARIB ETSI-UMTS CDMA W-CDMA 12 QF 12- N LNA_OUT 1 GAIN 2 MIX_IN 3 BIAS 9 VCC 8
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2110MHz
2170MHz
MAX2387/MAX2388/MAX2389
MAX2387MAX2388/
MAX2389
190MHz
380MHz
MAX2387/MAX2388
MAX2690
LNA SOT23-6
PWM controller sot23-6
max2471
MAXIM Integrated AD CSP 5
MAX2310
MAX2338
MAX2387
MAX2388
MAX2389
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PDF
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12-PIN
Abstract: MAX2387 MAX2388 MAX2389
Text: W-CDMA 2GHz LNA/MIXERS DRAW LESS THAN 8mA Perform Better than Discretes in Less than Half the Size The MAX2387/8/9 are designed for the emerging ARIB Japan and ETSI-UMTS (Europe) third-generation wideband CDMA (W-CDMA) markets. These SiGe devices consist of a dualgain LNA and a low-current, ultra-low-noise mixer, both optimized for 2110MHz to 2170MHz
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MAX2387/8/9
2110MHz
2170MHz
12-pin
MAX2389.
MAX2387-9
MAX2387
MAX2388
MAX2389
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PDF
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SM2122-51LD
Abstract: No abstract text available
Text: Power Amplifiers SM2122-51LD 2110MHz to 2170MHz Specifications RF Frequency P1dB Power Output Linear Gain Gain Flatness Over Band Gain Change Over Temp Input Return Loss Output Return Loss Min 2110 50.5 Typ Max 2170 45 ±1 ±1 ±1 -18 -18 Unit MHz dBm dB dB
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SM2122-51LD
2110MHz
2170MHz
40dBm
SM2122-51LD
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PDF
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Circulator
Abstract: No abstract text available
Text: RFCR2711 RFCR2711 2110MHz to 2170MHz Single Junction Drop-In Circulator 2110MHz TO 2170MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 0.75in x 0.75in Features Typical Insertion Loss Less than 0.2dB -70dBc IMD Minimum Isolation Greater than 23dB
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RFCR2711
2110MHz
2170MHz
RFCR2711
-70dBc
DS120419
Circulator
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PDF
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Circulator
Abstract: RFMD LTE Band 40
Text: RFCR2712 RFCR2712 2110MHz to 2170MHz Single Junction Drop-In Circulator 2110MHz TO 2170MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features Typical Insertion Loss Less than 0.2dB -80dBc IMD Typical Isolation Greater than 23dB
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RFCR2712
2110MHz
2170MHz
RFCR2712
-80dBc
DS120321
Circulator
RFMD LTE Band 40
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PDF
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Untitled
Abstract: No abstract text available
Text: RFCR2711 RFCR2711 2110MHz to 2170MHz Single Junction Drop-In Circulator 2110MHz TO 2170MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 0.75in x 0.75in Features Typical Insertion Loss Less than 0.2dB -70dBc IMD Minimum Isolation Greater than 23dB
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RFCR2711
2110MHz
2170MHz
-70dBc
RFCR2711
DS120419
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PDF
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DROP-IN CIRCULATOR
Abstract: No abstract text available
Text: PC2140AE-48H PC2140AE48HLow Noise, High Gain SiGe HBT 2110MHz TO 2170MHz DROP-IN CIRCULATOR Package: Drop-in, 0.75inx0.75in Product Description Features The PC2140AE-48H is a small, low cost drop-in circulator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These circulators feature a robust construction for
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PC2140AE-48H
PC2140AE48HLow
2110MHz
2170MHz
75inx0
PC2140AE-48H
-70dBc
DS091202
DROP-IN CIRCULATOR
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PDF
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ofdm transceiver 900mhz
Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure
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TQP8M9013
24-pin
TQP8M9013
ofdm transceiver 900mhz
433 mhz rf power amplifier module efficiency
04023J2R2BBS
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PDF
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Untitled
Abstract: No abstract text available
Text: PROPOSED RFPA2016 RFPA2016 3-Stage Power Amplifier, 1W 700MHz to 2700MHz GND 26 25 24 23 DET_IN RFOUT3/Vcc3 27 GND GND 28 RFOUT3/Vcc3 GND The RFPA2016 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias
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RFPA2016
700MHz
2700MHz
2140MHz
31dBm
DS140211
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PDF
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SAWEN1G84
Abstract: SAFEB1G57 SAFEB942MFL0F00 SAFEB942 SAFEB1G57K SAFEB1G57KE0F00 SAFEB1G SAWEP1G84 SAFEB836MAL sawen942
Text: Filters for Communication Equipment for RF/Local Chip Multilayer LC Filters BPF o LFB18/21/2H/31_SG Series +0.2 +0.10 (2) 0.8 -0.1 (4) 0.15±0.10 (1) Attenuation (dB) (3) 0.15±0.10 0.45±0.15 0.70±0.15 (1)(3) : GND (2) : OUT (4) : IN LFB18_SG Series 10
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LFB18/21/2H/31
1980MHz)
2170MHz)
50ohm
200ohm//27nH
SAWEN1G84
SAFEB1G57
SAFEB942MFL0F00
SAFEB942
SAFEB1G57K
SAFEB1G57KE0F00
SAFEB1G
SAWEP1G84
SAFEB836MAL
sawen942
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PDF
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SAYFP1G95AA0B00
Abstract: SAYFP1G95CA0B00 SAYFP1G95 SAYFP897MCA0B00 SAYFP897MBA0B00 SAYZY1G88CA0B00 SAYFP SAYZY1G95CA0B00 SAYFP836MCA0F00 SAYFP836MAJ0F00
Text: Filters for Communication Equipment Duplexers SAW Duplexers o SAYZY Series 3.0±0.2 6 (9) (5) (8) Dot Marking (ø0.4) 2.5±0.2 (7) (4) (1) (2) (0.20) (3) (C0.30) (3) (1) (2) 0.80±0.10 (0.10) (8) Marking: Laser Printing 9-0.50±0.10 6-1.15±0.10 6-0.90±0.10
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48MHz1909
52MHz)
925MHz
960MHz)
880MHz
915MHz)
48MHz
SAYFP1G95AA0B00
SAYFP1G95CA0B00
SAYFP1G95
SAYFP897MCA0B00
SAYFP897MBA0B00
SAYZY1G88CA0B00
SAYFP
SAYZY1G95CA0B00
SAYFP836MCA0F00
SAYFP836MAJ0F00
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3806 RF3806GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN h GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features 4W Output Power High Linearity 1500MHz to 2200MHz Operation
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RF3806
RF3806GaAs
1500MHz
2200MHz
RF3806
DS070205
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PDF
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toko 5c
Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
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SPA-2318
1700MHz
2200MHz
1960MHz
2140MHz
diPA-2318
SPA-2318
SPA-2318Z
toko 5c
MCH18
MCR03
TAJB106K020R
SPA-2318Z
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PDF
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GRM1555C1H1R0BZ01
Abstract: GRM1555C1H1R0BZ01E P12* RF qfn 3X3 land pattern LQG15HN12NJ02D RF5188 RF5188PCBA-41X GRM1555C1H1R
Text: RF5188 RoHS Compliant & Pb-Free Product 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Band 1 Handsets • 3V TD-SCDMA Handsets • Multi-Mode W-CDMA 3G Handsets • Spread-Spectrum Systems Product Description The RF5188 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third
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RF5188
1950MHZ
RF5188
1920MHz
1980MHz
203mm
330mm
025mm
GRM1555C1H1R0BZ01
GRM1555C1H1R0BZ01E
P12* RF
qfn 3X3 land pattern
LQG15HN12NJ02D
RF5188PCBA-41X
GRM1555C1H1R
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PDF
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IC 14511
Abstract: 70733 78621 8179 LM 3717 MAX2387 MAX2387EGC MAX2388 MAX2388EGC MAX2389
Text: 19-1834; Rev 0; 10/00 UAL IT MAN TION K A ET U E L H A EV TA S WS DA FOLLO W-CDMA LNA + Mixers Features ♦ Ultra-Low Current Consumption: 10.7mA MAX2387 , 9.9mA (MAX2388), and 7.9mA (MAX2389) ♦ +2.7V to +3.3V Single-Supply Operation ♦ Mixer NF: 7dB SSB
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MAX2387)
MAX2388)
MAX2389)
MAX2388/MAX2389)
12-Pin
MAX2387EGC
MAX2388EGC
MAX2389EGC
Dual87/MAX2388
IC 14511
70733
78621
8179
LM 3717
MAX2387
MAX2387EGC
MAX2388
MAX2388EGC
MAX2389
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PDF
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Ceramic Capacitors 104
Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-27
Ceramic Capacitors 104
mev-50a
DXW21BN7511S
SAYFP1G95AA0B00
ck 66 ul94v-0 lcd
SAYFP897MCA0B00
SAFEB1G57KE0F00
SAWEN1G84
murata enc-03r
MA300D1-1
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PDF
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Untitled
Abstract: No abstract text available
Text: 1/1 Multilayer Chip Baluns For W-CDMA/Tx & Rx Conformity to RoHS Directive HHM Series HHM1506 SHAPES AND DIMENSIONS/CIRCUIT 2.0±0.15 5 6 4 +0.1 0.25–0.2 1.25±0.15 6 TERMINAL FUNCTIONS 0.95±0.1 1 2 0.2±0.2 1 0.3 3 0.2 ELECTRICAL CHARACTERISTICS This width is 50Ω.
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HHM1506
2110MHz
2170MHz
1920MHz
1980MHz
2110MHz
2170MHz
2002/95/EC,
hhm1506
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PDF
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342dB
Abstract: DEA202450BT-2038A1
Text: 1/1 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA202450BT-2038A1 SHAPES AND DIMENSIONS Top view 2.0±0.15 4 Bottom view 0.15±0.1 3 0.3±0.15 1 1.25±0.15 0.95±0.1 2 0.15±0.1 1.5±0.15 Terminal functions
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DEA202450BT-2038A1
2500MHz]
960MHz]
1990MHz]
2170MHz]
5000MHz]
7500MHz]
2400MHz
2500MHz
342dB
DEA202450BT-2038A1
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PDF
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dvb-s tuner
Abstract: No abstract text available
Text: 19-0832; Rev 2; 5/10 KIT ATION EVALU E L B A IL AVA Complete, Direct-Conversion Tuner for DVB-S and Free-to-Air Applications ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 925MHz to 2175MHz Frequency Range Monolithic VCO: No Calibration Required -75dBm to 0dBm High Dynamic Range
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MAX2120
925MHz
2175MHz.
MAX2120
dvb-s tuner
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Untitled
Abstract: No abstract text available
Text: 19-3383; Rev 0; 8/04 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch The MAX9995 dual, high-linearity, downconversion mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB NF for UMTS/WCDMA, DCS, and PCS base-station
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1700MHz
2200MHz
MAX9995
380mA.
36-pi
21-0141H
T3666-2*
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Untitled
Abstract: No abstract text available
Text: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage
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RF1156
16-pin,
450MHz
69GHz
106dBm
108dBm
RF1156
DS110802
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PDF
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spa1526
Abstract: No abstract text available
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SOF-26
SPA1526Z
SPA1526ZSQ
SPA1526ZSR
850MHz
spa1526
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Untitled
Abstract: No abstract text available
Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz) P1dB>29dBm 400MHz to 2700MHz Operation Thermally Enhanced Slug
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RFPA3809
400MHz
2700MHz
2700MHz
49dBm
880MHz)
2140MHz)
29dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
SPA2318ZSQ
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