Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2120 M3 Search Results

    2120 M3 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C512-120DE Rochester Electronics LLC UVPROM, Visit Rochester Electronics LLC Buy
    AM27C512-120PI-G Rochester Electronics AM27C512 - 512Kb (64K x 8-Bit) CMOS OTP EPROM Visit Rochester Electronics Buy
    SF Impression Pixel

    2120 M3 Price and Stock

    Cinch Connectivity Solutions 21-20-M3.0

    CBL ASSY TRB PLUG TO PLUG 9.8'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 21-20-M3.0 Bulk 23 1
    • 1 $133.3
    • 10 $118.75
    • 100 $118.75
    • 1000 $118.75
    • 10000 $118.75
    Buy Now
    Mouser Electronics 21-20-M3.0 5
    • 1 $133.3
    • 10 $133.29
    • 100 $118.75
    • 1000 $118.75
    • 10000 $118.75
    Buy Now

    Cinch Connectivity Solutions 21-20-M3.5

    CBL ASSY TRB PLUG TO PLUG 11.5'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 21-20-M3.5 Bulk 10
    • 1 -
    • 10 $148.252
    • 100 $148.252
    • 1000 $148.252
    • 10000 $148.252
    Buy Now
    Mouser Electronics 21-20-M3.5
    • 1 -
    • 10 $148.25
    • 100 $148.23
    • 1000 $148.23
    • 10000 $148.23
    Get Quote

    JRH Electronics 380HS115M2120M3

    CONN BACKSHELL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 380HS115M2120M3 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    JRH Electronics 360HS001M2120M3

    CONNECTOR BACKSHELL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 360HS001M2120M3 Bulk 1
    • 1 $1739.97
    • 10 $1044.892
    • 100 $1044.892
    • 1000 $1044.892
    • 10000 $1044.892
    Buy Now

    JRH Electronics 380HS103N2120M3

    CONN BACKSHELL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 380HS103N2120M3 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    2120 M3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    21-20-M3.0 Cinch Connectivity Solutions CBL ASSY TRB PLUG 3M Original PDF
    21-20-M3.5 Cinch Connectivity Solutions CBL ASSY TRB PLUG 11.5' Original PDF

    2120 M3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    emerson rosemount

    Abstract: DPCO 05ATEX2130X PA66 - GF 25 relay
    Text: Product Data Sheet February 2015 00813-0100-4030, Rev GE Rosemount 2120 Full-featured Vibrating Fork Liquid Level Switch  Designed for operation in process temperatures of –40 to 302 °F –40 to 150 °C  Adjustable switching delay for turbulent or


    Original
    PDF

    2050s

    Abstract: 2530S 2u transistor 1630S 1040-s 1040S
    Text: M3.2U - Schaltung mit Sicherungen M3.2U - Circuit with fuses Luftselbstkühlung T A = 45°C Natural air cooling T A = 45°C Click on Outline No. for download Typenbezeichnung Part No. ZweigSicherung arm-fuse M3.2U 230/135 - 880S - K0.65S-6D428N-RCS M3.2U 230/135 - 1040S - K0.65S-6D798N-RCS


    Original
    PDF 65S-6D428N-RCS 1040S 65S-6D798N-RCS 1360S 36S-6D428N-RCS 1670S 36S-6D798N-RCS 2120S 05F-6D798N-RCS 2400S 2050s 2530S 2u transistor 1630S 1040-s

    R5S72643

    Abstract: SH7264 R5S72645 R5S72625 R5S72645P144FPU bosch edc 17 bosch edc 16 schematic diagram mac audio mpx 4000 SH72624 R5S72621P144FPU
    Text: The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7262 Group, SH7264 Group User's Manual: Hardware


    Original
    PDF SH7262 SH7264 32-Bit SH7260 R5S72620 R5S72621 R5S72622 R5S72623 R5S72624 R5S72643 R5S72645 R5S72625 R5S72645P144FPU bosch edc 17 bosch edc 16 schematic diagram mac audio mpx 4000 SH72624 R5S72621P144FPU

    M383L2828BT1

    Abstract: 1638B
    Text: M383L2828BT1 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity with FET Revision 0.2 Nov. 2000 - -1 - Rev. 0.2 Nov. 2000 M383L2828BT1 184pin Registered DDR SDRAM MODULE


    Original
    PDF M383L2828BT1 184pin 128Mx72 64Mx72) 64Mx4 72-bit M383L2828BT1 1638B

    n channel MOSFET 45 w 10 v

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21125S MRF21125SR3 MRF21125 n channel MOSFET 45 w 10 v

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21125R3 MRF21125SR3

    j686

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21125 MRF21125S j686

    j686

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original
    PDF dB110 MRF21125 MRF21125S MRF21125SR3 j686

    MRF21125

    Abstract: 465B MRF21125S
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original
    PDF MRF21125/D MRF21125 MRF21125S MRF21125 465B MRF21125S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original
    PDF MRF21125/D MRF21125 MRF21125S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original
    PDF MRF21125/D MRF21125 MRF21125S

    transistor motorola 236

    Abstract: 465B MRF21125 MRF21125S MRF21125SR3 j686
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21125/D MRF21125 MRF21125S MRF21125SR3 MRF21125 MRF21125S transistor motorola 236 465B MRF21125SR3 j686

    100B104JCA50X

    Abstract: 465B MRF21125 MRF21125R3 MRF21125SR3 j686
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 100B104JCA50X 465B MRF21125 MRF21125SR3 j686

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21125/D MRF21125R3 MRF21125SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21125 Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21125 MRF21125R3 MRF21125SR3

    MRF21085

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21085 MRF21085S

    J176 equivalent

    Abstract: MRF21085S MRF21085
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 J176 equivalent

    465B

    Abstract: AN1955 MRF21125 MRF21125R3 MRF21125SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original
    PDF MRF21125/D MRF21125R3 MRF21125SR3 MRF21125R3 465B AN1955 MRF21125 MRF21125SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3

    j686

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original
    PDF MRF21125/D MRF21125 MRF21125S j686

    MRF21125R3

    Abstract: MRF21125SR3 465B MRF21125
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 MRF21125SR3 465B MRF21125

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21085R3 MRF21085LSR3

    wb4 marking

    Abstract: J152 mosfet transistor 2110 transistor
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original
    PDF MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor

    MOTOROLA J210

    Abstract: MRF21085
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA J210