eudyna GaAs FET RF Transistor
Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
eudyna GaAs FET RF Transistor
high frequency transistor ga as fet
transistor on 4959
eudyna fet
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eudyna GaAs FET RF Transistor
Abstract: No abstract text available
Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor
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FHX13X,
FHX14X
12GHz
FHX13)
12GHz
FHX14X
2-18GHz
eudyna GaAs FET RF Transistor
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FHX04X
Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
FHX04
FHX05X
GaAs FET HEMT Chips
hemt low noise die
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Untitled
Abstract: No abstract text available
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
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fujitsu hemt
Abstract: No abstract text available
Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG/LP,
05LG/LP,
06LG/LP
12GHz
FHX04)
FHX05LG/LP,
FHX06LG/LP
2-18GHz
fujitsu hemt
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power amplifier 2-18GHZ
Abstract: No abstract text available
Text: CMM0015-BD RNP@š•@QXNP@gh¡@PNUw@mmic@a“–’Œ‰Œˆ˜ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•› š•”L@tˆŸ„™@WWPYY †•“
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CMM0015-BD
2-18GHz
CMM0015-BD
18GHz
SY35mm
power amplifier 2-18GHZ
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Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
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MA4SW110
MA4SW210
MA4SW310
30dBm
MA4SW110
MA4SW110,
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Untitled
Abstract: No abstract text available
Text: 2.0-18.0 GHz 0.5W MMIC Amplifier CMM0015-BD August 2006 - Rev 02-Aug-06 ADVANCED PRODUCT SPECIFICATIONS * PRODUCT DESCRIPTION: 2-18GHz 0.5W MMIC Amplifier PRODUCT APPLICATION: PROJECT ENGINEER: Issam Khayo MASK NUMBER: M390 (engineering mask) VERSION NUMBER: 2
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CMM0015-BD
02-Aug-06
2-18GHz
18GHz
35mm2
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MASW110
Abstract: MA4 diode MA4SW210 MA4SW310 W110 ARM v7 MA4SW110
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
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MA4SW110
MA4SW210
MA4SW310
30dBm
MA4SW110,
MA4SW210
MA4SW310
MASW110
MA4 diode
W110
ARM v7
MA4SW110
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MASW-001100-1190
Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation
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MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
50MHz
20GHz
33dBm
MASW-001100-1190,
MASW-002100-1191
MASW-001100-1190
MASW-001100-11900G
MASW-002100-11910G
MASW-003100-1192
MASW-003100-11920G
DSAE001512
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Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs
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MA4SW110
MA4SW210
MA4SW310
30dBm
MA4SW110,
MA4SW210
MA4SW310
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FHX04
Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04
FHX04X
FHX05X
GaAs FET HEMT Chips
hemt low noise die
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PDF
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fujitsu hemt
Abstract: FHX35X rm 702 627
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
Power4888
fujitsu hemt
rm 702 627
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00709
Abstract: MA4SW210 MADR-007097-000100 MA4SW110 MADR-009190-000
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs
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MA4SW110
MA4SW210
MA4SW310
30dBm
MA4SW110
MA4SW110,
00709
MADR-007097-000100
MADR-009190-000
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CHA3218-99F
Abstract: No abstract text available
Text: CHA3218-99F RoHS COMPLIANT 2-18GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3218-99F is a two stage very wide band Low Noise Amplifier. The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems.
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CHA3218-99F
2-18GHz
CHA3218-99F
2-18GHz
15dBm
DSCHA32181157
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power amplifier 2-18GHZ
Abstract: LMA183 DC TO 18GHZ RF AMPLIFIER MMIC Ablebond
Text: 2-18 GHz MESFET Amplifier Filtronic LMA183 Solid State Features • • • • • • • • • • 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply
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LMA183
15dBm
2-18GHz
62mmX2
LMA183
18GHz.
power amplifier 2-18GHZ
DC TO 18GHZ RF AMPLIFIER MMIC
Ablebond
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power amplifier 2-18GHZ
Abstract: 2-18ghz 2-18G
Text: CHA1074 2-18GHz Amplifier GaAs Monolithic Microwave IC Description This broadband GaAs Monolithic Microwave Integrated Circuit has been designed for use in gain stage applications where broadband high frequency performances with excellent gain, power and noise
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CHA1074
2-18GHz
18GHz
13dBm
DSCHA10746351
power amplifier 2-18GHZ
2-18G
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hemt low noise die
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
12GHz
FHX06X
2-18GHz
hemt low noise die
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PDF
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Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
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MA4SW110
MA4SW210
MA4SW310
50MHz
20GHz
30dBm
MA4SW110
MA4SW110,
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hartley oscillator
Abstract: The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 max2115 history of varactor diode modern and radar transmitters 226 varactor hartley sa2400
Text: SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Application Note 1768: Oct 21, 2002 Tracking Advances In VCO Technology Tracks the history of voltage-controlled oscillators VCOs since approximately 1910. Provides examples of VCO integration in RF ICs. Presents technology, performance
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MAX2622:
MAX2624:
MAX2750:
MAX2753:
MAX2754:
MAX2820:
MAX2900:
com/an1768
hartley oscillator
The Modern Armstrong Regenerative Receiver
1GHz vco
AR5111
max2115
history of varactor diode
modern and radar transmitters
226 varactor
hartley
sa2400
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PDF
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Untitled
Abstract: No abstract text available
Text: SLNA-180-33-30-SMA DATA SHEET 3 dB NF, 2 GHz to 18 GHz, Low Noise Broadband Amplifier with 33 dB Gain and SMA SLNA-180-33-30-SMA is a Broadband High Gain GaAs PHEMT MMIC-based coaxial Low Noise Amplifier, operating in the 2 to 18 GHz frequency range. The amplifier
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SLNA-180-33-30-SMA
SLNA-180-33-30-SMA
12Volts,
180mA)
-broadband-amplifier-slna-180-33-30-sma-p
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FHX13LP
Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Text: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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OCR Scan
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FHX13LG/LP,
14LG/LP
12GHz
FHX13)
2-18GHz
FCSI0598M200
FHX13LP
FHX14LP
transistor fhx 35 lp
FHX13LG
FHX13
fujitsu hemt
FHX14LG
Z150
low noise hemt transistor
low noise hemt
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PDF
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u 233 7011
Abstract: HA2001
Text: MMICs INDEX POWER AM PLIFIERS ♦ CHA1027 - 4 .5 -6.0G H z POWER AMPLIFIER. 133 NEW ♦C H A 5 0 0 5 - 4.5 - 6.5GHz POWER DRIVER AMPLIFIER. 139 NEW ♦C H A 6 0 0 9 - 5.0 - 6.0GHz POWER
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OCR Scan
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CHA1027
CHA7010
CHA1051
18GHz
CHA1074
2-18GHZ
CHS5039
CHS5041
CHS5042
CHS5043
u 233 7011
HA2001
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