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    21N50Q Price and Stock

    IXYS Corporation IXFT21N50Q

    MOSFET N-CH 500V 21A TO268
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    IXYS Corporation IXTH21N50Q

    MOSFET N-CH 500V 21A TO247AD
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    IXYS Corporation IXFH21N50Q

    MOSFET N-CH 500V 21A TO247AD
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    21N50Q Datasheets Context Search

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    21N50Q

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 21N50Q IXTT 21N50Q Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF 21N50Q 21N50Q O-247 O-268 O-268

    IXFH21N50Q

    Abstract: No abstract text available
    Text: IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 21N50Q 065B1 728B1 123B1 728B1 IXFH21N50Q

    3350c

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM


    Original     		PDF 21N50Q O-247 O-268 3350c

    Untitled

    Abstract: No abstract text available
    Text: VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 21N50Q O-247 065B1 728B1 123B1 728B1

    3350c

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM


    Original     		PDF 21N50Q O-247 O-268 3350c

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A Maximum Ratings


    Original     		PDF 21N50Q 21N50Q O-247 O-268 O-268AA

    21N50Q

    Abstract: No abstract text available
    Text: IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 21N50Q O-268 728B1 21N50Q

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60