TG2006F
Abstract: No abstract text available
Text: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)
|
Original
|
TG2006F
TG2006F
|
PDF
|
ULN2003APG china
Abstract: tb62216 TB62216FG TC7600FNG TC62D722 ULN2803APG ULN2003APG IC CONNECTION TCV7106 TB62214 TPD1053F
Text: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Analog Switch Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers LED Driver ICs Power Supply ICs Small-Signal MMICs (Radio-Frequency Cell Packs)
|
Original
|
2010/9SCE0004K
TA75S393F
TA75S01F
ULN2003APG china
tb62216
TB62216FG
TC7600FNG
TC62D722
ULN2803APG
ULN2003APG IC CONNECTION
TCV7106
TB62214
TPD1053F
|
PDF
|
tb62506fg
Abstract: TB62207BFG tb62506 TB62207 ULN2803APG ULN2003APG toshiba uln2803apg TPD1047F ULN2003APG motor TB62201AFG
Text: General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs z 118 Intelligent Power Devices (IPDs) z 121 Interface Drivers z 124 Motor Drivers z 127 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 142 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs
|
Original
|
TA75S393F
TA75S01F
TB7600CTC/TU
TB7601CTC/TU
TB7602CTC/TU
TA4107F
12dBmW
tb62506fg
TB62207BFG
tb62506
TB62207
ULN2803APG
ULN2003APG
toshiba uln2803apg
TPD1047F
ULN2003APG motor
TB62201AFG
|
PDF
|
MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
|
Original
|
2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
|
PDF
|
TB6604FTG
Abstract: TB6604 TB6603FTG tb6603 TB62216FG TB62216FNG TB62213FNG TC7600FNG TC62D722 TB62783
Text: 東芝半導体製品総覧表 2011 年 1 月版 汎用リニア IC オペアンプ/コンパレータ アナログスイッチ インテリジェントパワーデバイス IPD インタフェースドライバ モータドライバ LED ドライバ IC
|
Original
|
SCJ0004R
TA75S393F
TA75S01F
TA75S558F
5W393
TA75W393FU
TA75W558FU
5W558
TA75W01FU
TB6604FTG
TB6604
TB6603FTG
tb6603
TB62216FG
TB62216FNG
TB62213FNG
TC7600FNG
TC62D722
TB62783
|
PDF
|
MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
|
Original
|
2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
|
PDF
|
QFP128 0.4mm
Abstract: ddr pin out QFP128 TC6380AF TC6377AF TB6539N QFP100 TC6374AF
Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年6月号 米国にマイクロプロセッサの開発・マーケティング会社を設立 当社は システムLSIのマーケティングおよび開発を行なう新会社、ArTile Microsystems
|
Original
|
500MIPS
7-3405FAX.
TC6380AF
TC6377AF/XB
TC6373XB
TC6374AF
LSI044-548-2451
ME0SB70
PC2100CAS
THMD1GE0SB80
QFP128 0.4mm
ddr pin out
QFP128
TC6380AF
TC6377AF
TB6539N
QFP100
TC6374AF
|
PDF
|
mgcs
Abstract: No abstract text available
Text: TA4022F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4022F VHF-UHF Wide Band Amplifier Applications Features • Low distortion: IM3 = 58dBc @45 MHz • Operating supply voltage: VCC = 4.75 V~5.25 V Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
TA4022F
58dBc
4022F
mgcs
|
PDF
|
21dbmw
Abstract: No abstract text available
Text: TA4022F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4022F VHF-UHF Wide Band Amplifier Applications Features • Low distortion: IM3 = 58dBc @45 MHz • Operating supply voltage: VCC = 4.75 V~5.25 V Weight: 0.02g (typ.) Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
TA4022F
58dBc
21dbmw
|
PDF
|
TG2006F
Abstract: No abstract text available
Text: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)
|
Original
|
TG2006F
2002isted
TG2006F
|
PDF
|
4022F
Abstract: TA4022F
Text: TA4022F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4022F VHF-UHF Wide Band Amplifier Applications Features • Low distortion: IM3 = 58dBc @45 MHz • Operating supply voltage: VCC = 4.75 V~5.25 V Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
TA4022F
58dBc
4022F
TA4022F
|
PDF
|
TB1238AN
Abstract: IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P
Text: ASSPs Audio & Video Equipment ICs z 62 Communications Equipment ICs z 85 High-Frequency Power Amp ICs z 88 Automotive ICs z 89 Display Driver ICs z 92 Network & Interface ICs z 95 Peripheral Equipment LSIs z 96 Digital Temperature Compensation ICs z 97 Other Consumer Product ICs & LSIs z 98
|
Original
|
TMPA8812CxDNG
TMPA8821CxNG
TMPA8823CxNG
TMPA8827CxNG
TMPA8829CxNG
TMPA8857CxNG
TMPA8859CxNG
TMPA8812PSNG
P-SDIP56-600-1
TMPA8821PSNG
TB1238AN
IC TB1238AN
TA8269H
TMPA8821PSNG
TC90A85AF
TMPA8823
TB1254AN
TB1261ANG
tb1238an toshiba
TA7317P
|
PDF
|
FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
|
Original
|
050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
FET K161
Transistor C2216
Transistor k161
k161 jfet
k192a
Transistor C2668
fet k241
k161 mosfet
Transistor C2347
Transistor C1923
|
PDF
|
RFM70U12D
Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Text: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
|
Original
|
SCJ0004O
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5106
2SC5109
RFM70U12D
2SC3136
RFM70
TGI8596-50
MT4S300T
TA4029
TA4032FT
TA4029TU
TA4029CTC
2SK403
|
PDF
|
|
|
TG20
Abstract: TG2006F
Text: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA typ. l Small package: SM8 package (2.9 x 2.8 × 1.1mm)
|
Original
|
TG2006F
TG20
TG2006F
|
PDF
|
TGI7785-120L
Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
Text: 東芝半導体製品総覧表 2011 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード 小信号 MMIC 高周波セルパック マイクロ波半導体
|
Original
|
SCJ0004R
2SC2714
2SC5064
2SC5084
2SC5089
2SC5106
2SC5109
MT3S03A
MT3S04A
MT3S106
TGI7785-120L
TA4029TU
MT3S11CT
TA4029CTC
MT4S300T
MT4S300U
TA4032FT
TGI8596-50
TMD7185-2
TGI0910-50
|
PDF
|
TG2006F
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz POWER AMP FEATURES • VDD = 3V, lDD = 130mA Typ. • PQ = 21dBmW (Min), Gp = 22dB (Typ.) • Single voltage supply MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
|
OCR Scan
|
TG2006F
130mA
21dBmW
100pF
TG2006F
10000pF
|
PDF
|
21dbmw
Abstract: 1012 TOSHIBA sf 1012 TG2005F TG2005 961001EBA1
Text: TOSHIBA TG2005F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2005F 1.9GHz POWER AMP FEATURES • VDD = 3V, lDD = 180mA Typ. • P0 = 21dBmW (Min), Gp = 20dB (Typ.) • Control voltage : 0V/3V MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
|
OCR Scan
|
TG2005F
180mA
21dBmW
180mA
21dBmW
1012 TOSHIBA
sf 1012
TG2005F
TG2005
961001EBA1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHSf DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation Vd = 3V, Vg = 0 to 3V • Low Current Consumption lt= 130mA Typ.
|
OCR Scan
|
TG2006F
130mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation : Vd = 3V, V g = 0 to 3V • Low Current Consumption : It = 130mA Typ.
|
OCR Scan
|
TG2006F
130mA
10000pF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC 2 QQ6 F T G 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation Vd = 3V, V g = 0 to 3V • Low Current Consumption It = 130mA Typ.
|
OCR Scan
|
TG2006F
130mA
|
PDF
|