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    2222A SOT23 Search Results

    2222A SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
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    2222A SOT23 Price and Stock

    Nexperia PMBT2222A,215

    Bipolar Transistors - BJT SOT23 40V .6A NPN SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMBT2222A,215 Reel 2,424,000 3,000
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    Nexperia MMBT2222A,215

    Bipolar Transistors - BJT SOT23 40V .6A NPN BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI MMBT2222A,215 Reel 444,000 3,000
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    Nexperia PMBT2222A,235

    Bipolar Transistors - BJT SOT23 40V .6A NPN SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMBT2222A,235 Reel 200,000 10,000
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    2222A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
    Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF VPS05161 OT-23 2222/A EHP00744 EHP00745 Oct-14-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP

    1P marking

    Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO


    Original     		PDF LMBT2222LT1G LMBT2222ALT1G 3000/Tape OT-23 1P marking LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage


    Original     		PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1 OT-23 LMBT2222â

    2222a sot23

    Abstract: transistor 2222a
    Text: SO2222A  SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type M arking SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS MEDIUM CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE PNP COMPLEMENTARY TYPE IS


    Original     		PDF SO2222A SO2907A OT-23 2222a sot23 transistor 2222a

    n13 sot 65

    Abstract: n13 sot 23 marking N20 SO2222 SO2222A SO2907 SO2907A
    Text: SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking SO2222 N13 SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY


    Original     		PDF SO2222 SO2222A SO2907 SO2907A OT-23 n13 sot 65 n13 sot 23 marking N20 SO2222 SO2222A SO2907A

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


    Original     		PDF LMBT2222LT1G LMBT2222ALT1G

    transistor 2222a to-92

    Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage


    Original     		PDF MMBT2222LT1 MMBT2222ALT1* 236AB) transistor 2222a to-92 MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23

    2907 TRANSISTOR PNP

    Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
    Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF VPS05161 OT-23 2907/A EHP00752 EHP00753 Oct-14-1999 EHP00754 2907 TRANSISTOR PNP 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907

    2907A

    Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
    Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E


    Original     		PDF Q68000-A6474 VPS05161 OT-23 Jan-22-1999 2907/A EHP00754 2907A 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474

    2222A fairchild

    Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
    Text: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted


    Original     		PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 500mA. PN2222A O-92-3 PN2222ABU PN2222ANLBU 2222A fairchild 22222a 2222a sot223 SOT-23 EBC 2222A to-92 npn

    LTC1172

    Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
    Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents


    Original     		PDF FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 push pull converter 70V motor controller IRF830 inverter irf840

    transistor A106

    Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
    Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A


    Original     		PDF LM2639 T025A2 OT-23 SMDIP-10 SO-24 205Inductor A6S-0104 transistor A106 transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet

    transistor 2222a

    Abstract: 3904 NPN 3904 TRANSISTOR npn transistor pnp 3906 3906 pnp CMXT2207 2222a NPN 2222A transistors 2222A transistor
    Text: Dual Small Signal Transistors SOT-26 Case, 350mW TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO V MIN (V) MIN (V) MIN ICBO @ VCB *ICEV @ VCE (nA) MAX hFE @ VCE @ IC (V) MIN MAX VCE(SAT) @ IC Cob fT NF toff (V) (mA) (V) MAX (mA) (pF) MAX (MHz) MIN (dB) MAX (ns) MAX


    Original     		PDF OT-26 350mW CMXT2222A CMXT2907A CMXT2207 CMXT3904 CMXT3906 CMXT3946 CMST2222A CMST3904 transistor 2222a 3904 NPN 3904 TRANSISTOR npn transistor pnp 3906 3906 pnp 2222a NPN 2222A transistors 2222A transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B


    OCR Scan     		PDF Q68000-A6481 OT-23 Jan-22-1999

    2907a TRANSISTOR PNP

    Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
    Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474


    OCR Scan     		PDF Q68000-A6474 OT-23 Jan-22-1999 EHPGQ751 2907a TRANSISTOR PNP 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474


    OCR Scan     		PDF 68000-A6474 OT-23

    KH 2222

    Abstract: hp 2222 equivalent of 2222 NPN 2222 A BT2222 2222AM
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B T2222LT1 M M BT2222ALT1* G eneral Purpose Transistors NPN Silicon colle3ctor 'M o to ro la P referred Device 1 BASE Jl§ 2 EMITTER MAXIMUM RATINGS Rating Symbol 2222 2222A Unit C o lle c to r-E m itte r Voltage VCEO


    OCR Scan     		PDF T2222LT1 BT2222ALT1* OT-23 O-236AB) BT2222ALT1 KH 2222 hp 2222 equivalent of 2222 NPN 2222 A BT2222 2222AM

    CMPT2222A

    Abstract: ja ctb
    Text: Central" Semiconductor Corp. C M P T 2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and


    OCR Scan     		PDF CMPT2222A OT-23 CMPT2222A 150mA, ja ctb

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P lastic-E ncap sulate T ra n s is to rs ^ M M B T 2222A LT 1 TRANSISTO R NPN 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25'C) C ollector current ICM: 0.6 A 2.4 C ollector-base voltage « 1-3 * V(BR)CBO: 75V Operating and storage junction temperature range


    OCR Scan     		PDF OT-23 MMBT2222ALT1

    transistor 3904

    Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
    Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.


    OCR Scan     		PDF OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn

    2222a sot23

    Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
    Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.


    OCR Scan     		PDF FMMT2222 FMMT2222A FMMT2907 OT-23 FMMT2222A Co00/300 FMMT2369A 2222a sot23 2222a bc 2222a 50s MARKING CODE BCV72 BCW29 BFQ31

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


    OCR Scan     		PDF BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82

    t2222

    Abstract: T2222R B150C MT2907
    Text: FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYM BOL FMMT2222 MIN. MAX. 250 FMMT2222A MIN. MAX. 300 UNIT CONDITIONS. Transition Frequency Output Capacitance fT MHz lr=20mA, V ce=20V f=100MHz VC~10V, lE=0,


    OCR Scan     		PDF FMMT2222 FMMT2222A FMMT2222A 100MHz 140KHz 150mA, 150mA 200ns t2222 T2222R B150C MT2907

    Untitled

    Abstract: No abstract text available
    Text: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.


    OCR Scan     		PDF PMBT2222 PMBT2222A BT2222_ BT2222A