BGA-56P-M01
Abstract: DS05-50216-1E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V
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DS05-50216-1E
MB84VD2108XEA-70/85/MB84VD2109XEA-70/85
56-ball
56-pin
BGA-56P-M01
DS05-50216-1E
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Untitled
Abstract: No abstract text available
Text: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D
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RX64M
R01DS0173EJ0100
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
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M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL16x4D
M410000002
DL161
DL162
DL163
m410000009
AM29DL164DT
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SA30* diode
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes
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DS05-20880-4E
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
F0311
SA30* diode
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary
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RX62T
R01DS0096EJ0100
100-MHz
32-bit
12-bit
10-bit
IEEE-754
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2228H
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50220-2E
MB84VD2118XEG-70/85/MB84VD2119XEG-70/85
56-ball
BGA-56P-M01)
MB84VD21
2228H
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20874-4E
MBM29DL16XTD/BD
F9909
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MB84VD2118XA
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2118XA-85/MB84VD2119XA-85 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance
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MB84VD2118XA-85/MB84VD2119XA-85
69-ball
56-pin
F9903
MB84VD2118XA
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DIODE marking A19
Abstract: FPT-48P-M19 FPT-48P-M20
Text: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
DS05-20880-5E
F0311
ProductDS05-20880-5E
DIODE marking A19
FPT-48P-M19
FPT-48P-M20
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R01US0032EJ
Abstract: No abstract text available
Text: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RX63T
32-Bit
RX600
R01UH0238EJ0210
R01US0032EJ
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121bd
Abstract: No abstract text available
Text: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very
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ALC10
ALC10
121bd
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20880-1E
MBM29DL16XTE/BE
MBM29DL16XTE/BE
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TP-128
Abstract: No abstract text available
Text: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0200 Rev.2.00 Mar 11, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase
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RX63T
R01DS0087EJ0200
100-MHz
32-bit
12-bit
10-bit
IEEE-754
TP-128
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BGA-48P-M13
Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20874-4E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
BGA-48P-M13
DS05-20874-4E
FPT-48P-M19
FPT-48P-M20
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sa728
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50220-2E
MB84VD2118XEG-70/85/MB84VD2119XEG-70/85
56-ball
BGA-56P-M01)
MB84VD21third
F0209
sa728
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DS05
Abstract: mbm29dl16xtd
Text: MBM29DL16XTD/16XBD-70/90 データシート 生産終息品 MBM29DL16XTD/16XBD- 70/90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29DL16XTD/16XBD-70/90
MBM29DL16XTD/16XBD-
MBM29DL16XTD/16XBD
DS05-20874-8
MBM29DL16XTD/16XBD
DS05-20874-8
MBM29DL16XTD/BD
DS05
mbm29dl16xtd
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20880-1E
MBM29DL16XTE/BE
F0005
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DS05
Abstract: SA201
Text: MBM29DL16XTE/16XBE70/90 データシート 生産終息品 70/90 MBM29DL16XTE/16XBE Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29DL16XTE/16XBE70/90
MBM29DL16XTE/16XBE
DS05-20880-5
MBM29DL16XTE/16XBE
DS05-20880-5
MBM29DL16XTE/BE
DS05
SA201
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121bd
Abstract: SC 1139 DG 391ED400 152FP500 ALC10
Text: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very
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ALC10
ALC10
121bd
SC 1139 DG
391ED400
152FP500
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Untitled
Abstract: No abstract text available
Text: Snap-In Aluminum Electrolytic Capacitors ALC12 Series, 85ºC Overview Applications KEMET's ALC12 Series of capacitors is a high CV snap-in version of the ALC10 Series range. Both series are designed for applications where high reliability and compact sizes are
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ALC12
ALC10
ALC12
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SC 1139 DG
Abstract: 121bd 391DF400 bc 407 lead info 561EH450 223ED040 101CC500 562CD063
Text: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very
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ALC10
ALC10
SC 1139 DG
121bd
391DF400
bc 407 lead info
561EH450
223ED040
101CC500
562CD063
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MB84VD2108X
Abstract: MB84VD2109X
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50201-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108X-85/MB84VD2109X-85 • FEATURES • Power supply voltage of 2.7 V to 3.6 V • High performance
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DS05-50201-3E
MB84VD2108X-85/MB84VD2109X-85
61-ball
56-pin
MB84VD2108X
MB84VD2109X
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DS05-20880-3E
Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes
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DS05-20880-3E
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
F0305
DS05-20880-3E
FPT-48P-M19
FPT-48P-M20
SA30* diode
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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