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    22367 Search Results

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    22367 Price and Stock

    TE Connectivity 202236-7

    CONN PIN GOLD SOLDER EYELET
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    DigiKey 202236-7 Bulk 5,608 1
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    Newark 202236-7 Bulk 3,102 1
    • 1 $2.62
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    TE Connectivity 322367

    CONN RING CIRC 16-22AWG #1/4
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    DigiKey 322367 Bulk 776 1
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    TTI 322367 Bulk 453 2
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    Avnet Abacus 322367 42 Weeks 1,000
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    TE Connectivity 2236721-1

    ADAPTER,FOR TAB HOUSING,ASSY
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    DigiKey 2236721-1 Box 466 1
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    Mouser Electronics 2236721-1 213
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    Avnet Abacus 2236721-1 1,440 7 Weeks 120
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    New Advantage Corporation 2236721-1 1,440 1
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    Cal Test Electronics CT2236-7

    CONN BANANA JACK THRD PURPLE
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    DigiKey CT2236-7 Bulk 36 1
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    TestEquity LLC CT2236-7
    • 1 $2.85
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    Phoenix Contact 1522367

    CBL 6POS RCPT RA TO WIRE 16.4'
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    DigiKey 1522367 Bulk 2 1
    • 1 $51.54
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    Master Electronics 1522367
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    Sager 1522367 1
    • 1 $57.73
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    22367 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    22367 Brady Worldwide B401 7X10 GRN/BLK/WHT SAFETY FIR Original PDF
    2-2367196-3 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367196-4 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367196-5 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367196-6 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367196-7 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367196-8 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367196-9 TE Connectivity 1MM RIGHT ANGLE HEADER WITH LATC Original PDF
    2-2367197-3 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2-2367197-4 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2-2367197-5 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2-2367197-6 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2-2367197-7 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2-2367197-8 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2-2367197-9 TE Connectivity 1MM VERTICAL HEADER WITH LATCH, Original PDF
    2236721-1 TE Connectivity AMP Connectors Connectors, Interconnects - Rectangular Connectors - Accessories - ADAPTER,FOR TAB HOUSING,ASSY Original PDF

    22367 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 13,4 12,25 Ident-Nr. 12 XXXXXXX ERNI 11,4 1,6 Date Code 223671 0,2 9,6 Distanzstück distance 2 4x2= 3,7 25 max. 8 4 max. 1 4x2= 1 max. 8 14 11 2 a b c d e 2 10 x 2 = 20 Bestückungsplan - contact layout 11 1 a b c d e = bestückt - assemble Lochbild für Leiterplatte


    Original
    PDF

    15ZA

    Abstract: No abstract text available
    Text: 13,45 -0,1 15,4 Date Code 3 -0,1 Ident-Nr. ERNI 223672 3,8 XXXXXXX Ausrichtstreifen 5 0,5 Alignment strip 2 2 10 x 2 = 4x2= 20 25 15 z a Ebene - Level 3 Ebene - Level 2 11.2 9.7 8.2 Ebene - Level 1 b 8 +0.2 +0.2 +0.2 4.5 ±0.3 c d 3.7 ±0.3 e f A P2 3,75 max


    Original
    PDF

    diode so3

    Abstract: No abstract text available
    Text: • 22367^2 G0G243b 700 ■ C O L 3-' Pg7'.rH pS-IC 2 - V- apj aG-je<j po-Qg, £f~il . flpir S. '93 A .YftM£VQitAcki\ “f,b . This material and the information herein is the property or Fuji Electric Co.Ltd,They shall be neither reproduced, copie'.!. lent, or disclosed in any way whatsoever for the use of uny


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    G0G243b MT5F5032 diode so3 PDF

    2SK962

    Abstract: T03P 2MI200F-025
    Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)


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    2SK1082 2SK962 2SK1217 2SK1512 2SK1511 T03PF 2SK1008-01 2SK1010-01 2SK1012-01 2SK1014-01 T03P 2MI200F-025 PDF

    1N5499

    Abstract: IN5399 IN5394 IN5395 in5397 IN5393 Collmer Semiconductor 1N549 IN5392 IN5398
    Text: COLLMER SEMICONDUCTOR INC MfiE D • 2236712 Q0G17Ü3 DIT ■ COL 1*5 Amp Silicon Rectifiers -o\-\<z> IN 5391 THRU 1N5499 FEATURES • lo w co st • n ig n c u rre m c a p a D in ry • lo w le a K a g e • lo w ro r w a ra i v o lta q e d r o p a I D O -4 1


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    Q001703 1N5499 DO-41 STD-202E 1N5499 IN5399 IN5394 IN5395 in5397 IN5393 Collmer Semiconductor 1N549 IN5392 IN5398 PDF

    SL012

    Abstract: No abstract text available
    Text: COLLNER SEMICONDUCTOR INC 22367^ 2 M6 E D 0 GQ1 7 S 7 2 ciG « C O L SL012 1.OA T - G ‘5 - 1 3 O utline D raw ings LOW LOSS SUPER HIG H SPEED RECTIFIER • Features • Surface m ount device • Low V F • Super high speed sw itching. • High reliability by planer design.


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    QGG17S7 SL012 PDF

    Untitled

    Abstract: No abstract text available
    Text: «COL Ratings and characteristics of Fuji I GBT 22367^2 0 Q02421 2 ÔT M BT Module 2 . Equivalent Circuit (B 1 ) (B 2 ) 3 . Absolute Haxiaua Katings ( Tj =25 *C) This m ateria! and the information herein is the property o f Fuji Electric C o ,Ltd .Th e y shall be neither rep ro d u ced , c o p io c .


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    Q02421 G002424 PDF

    7D100A-050EHR

    Abstract: 7D30A-050EHR 7D75A-050EHR 7D50A-050EHR 2R6D15A-050AJV 7D150A-050EHR 7d30a-050 7d50a050 6D10A-050EJR 7d30a
    Text: COLLMER SEMICONDUCTOR INC MflE J> m 22367*12 00GlS7b 3flG « C O L Power Darlington Modules 'T ^ - ^ EXB6S0 EXBS40 900 VOLT IGBTs FOR RESONANT APPLICATIONS Volts (m in) le Am ps (min) 900 900 50 60 VCE8 Device Type IMB50-090A MBT001 Rth (J-c) °C/Watts (max)


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    00GlS7b EXBS40 EXB840 IMB50-090A MBT001 T03PL EXB850 EXB840 EXB851 EXB841 7D100A-050EHR 7D30A-050EHR 7D75A-050EHR 7D50A-050EHR 2R6D15A-050AJV 7D150A-050EHR 7d30a-050 7d50a050 6D10A-050EJR 7d30a PDF

    2SC3033

    Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
    Text: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073


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    O-220AB 2SC2929 2SC3549 2SD1073 2SB862* 2SD1128 2SD930 2SD2767 2SD834 2SD982 2SC3033 Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191 PDF

    H150

    Abstract: SL012 RM200 rectifier sc-62
    Text: COLLMER SEMICONDUCTOR INC 22367^2 00G17S7 2TG • COL 46E D SL012 1.OA T -O V I3 Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER ■ Features • Surface m ount device • Low V F • S uper high speed sw itchin g. • High reliability by planer design.


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    SL012 Q0G1757 SC-62 10Characteristics H150 RM200 rectifier sc-62 PDF

    ID500A-030

    Abstract: EVM31-050 ID500A030 2DI75S-050A ET127 EVK75-050 etn81-055 ET1275
    Text: COLLHER SEMICONDUCTOR INC MAE D 2236712 ÜGDlbSñ 2 Mb w Power Darlington Modules ICOL T - 3 > ^ '3 > 5 ' S ü t EO volts Device yp*W mMs M í£ i9 & ~ € : Switchinq Time max i ton ts tf fisec j.sec /isec. VCEO (sus) volts Pac' m w È â m Single Darlington Modules (Isolated)


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    ETG81-050 ETK81 ETK85-050 ETL81 ETN81-055 1DI240A-055 ETN85-050 1DI480A-055 35kgcm ID500A-030 EVM31-050 ID500A030 2DI75S-050A ET127 EVK75-050 ET1275 PDF

    Untitled

    Abstract: No abstract text available
    Text: COLLflER S E M I C O N D U C T O R 1 INC 2 MA E D K • Scope This s p e c ifie s Fuji power MOSFET O utline I Construction D ) Application M) Outview 1 5 1 1 22367*12 D 0 Q 1 6 0 7 b Hb ICOL 2 S K 15 1 1 N-channel enhancesent aode power MOSFET fo r switching


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    MK5C25623) 5F179S MT5F1796 PDF

    EQA03-07

    Abstract: EQA03-05 EQA03-06 EQA03-08 EQA03-09 EQA03-11 EQA03-13 EQA03-14 EQA03-15 erD33
    Text: C0LLÎ1ER SEMICONDUCTOR INC 34E 3> UÊ 22367^2 000154^ 2 H C O L Z e n e r diodes 4 0 0 m W , 5 to 3 5 V E Q A 0 3 -D - ^ - M axim um ratings - M ax. po w e r d is s ip a tio n at 2 5 °C 4 0 0 mW C o n tin u o u s a llo w a b le ju n c tio n te m p e ra tu re


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    400mW, EQA03-D 400mW 175aC ERA15, ERA34, ERA91, ERA22, ERC13 ERA38, EQA03-07 EQA03-05 EQA03-06 EQA03-08 EQA03-09 EQA03-11 EQA03-13 EQA03-14 EQA03-15 erD33 PDF

    esal73

    Abstract: 3PHA R702
    Text: COLLMER SEMICONDUCTOR INC b3E D • 22367^2 DOOlöbT 113 * C O L DIODE BRIDGE MODULES_<§ Ratings and Characteristics Connection Type Part Number Rated Rated Surge Junction Insulation Forward Thermal Pkg. Voltage Current Current Temp Voltage


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    PDF

    2sc3318

    Abstract: 2SC4831 Ringing Choke Converter 2SC3320 2SC3317 2SC4508 FT401
    Text: ¡ S up er high speed sw itch in g tran sistors • S u ita b le fo r 100kHz class sw itching regulators D cvn .o tv p c V cbo 2S C 3317 2SC3Ht>b Pr c o n t. A m p s . W a tts f iw if r h in n t im « M a x 1 P ackag e N et m ass G ra m s VcEO VcEO V o lts


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    100kHz 2SC3317 T0-220AB T0-220F17 2SC3318 2SC3320 2SC4831 FT401 2SC2656 D00371B Ringing Choke Converter 2SC4508 PDF

    ERC62-004

    Abstract: i326
    Text: ERC62-004 10A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings


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    ERC62-004 O-220 500ns, ERC62-004 i326 PDF

    DDD4425

    Abstract: DDD4432 DDD443D
    Text: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.


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    5D-120 H04-004-07 0D04423 MS5F3515 H04-004-03 DDDMM33 0QD4143M DDD4425 DDD4432 DDD443D PDF

    SC015-4

    Abstract: 15X15 SC015-2 SC015-6
    Text: SCOI 5 1.0A GENERAL USE r e c t i f i e r d io d e Outline Drawing • 12-“ I Features Marking • Surface mount device • High reliability 1 1 l u u L iviAAr~\r\ 1INva I - SYMBOL _ Applications / p ■ AB 1 • General purpose rectifier applications


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    SC015-2 SC015-4 SC015-6 15X15" 0Q03bSfa 15X15 SC015-6 PDF

    oms 450

    Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
    Text: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance


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    2SK1086-M SC-67 A2-132 oms 450 A2131 P channel MOSFET 10A schematic PDF

    6MBI50J-120

    Abstract: F4956 DIODE M4A F495
    Text: This Material Copyrighted By Its Respective Manufacturer 2. 3. Equivalent C irc u it of Module Equivalent C irc u it -04- +o- -OE ,C O GICH G3CH BtO — 630— C50—I C2CHI ' ' C4CH l B20- B40- -O O 1V a E50- -o . gscH Current Control C ircu it - ù w I


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    E50-O 50A//Â E2367T2 024b7 6MBI50J-120 F4956 DIODE M4A F495 PDF

    1MBH50-090

    Abstract: electrical symbols LC resonant circuit schematic symbols lc50a
    Text: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply


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    1MBH50-090 T03PL 1MBH50-090 electrical symbols LC resonant circuit schematic symbols lc50a PDF

    transistor 75 U50

    Abstract: 2DI50M-050 2DI100MA-050 2DI30M-050 M203 M208 M210 6DI100M-050
    Text: BIPOLAR TRANSISTOR M O DULES Ratings and Specifications 600 volts class high Fife power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t cu rren t capacity 75 to 300A , it is possible to m in iatu rize and standardize th e base drive circuit and drive p o w er supply.


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    2DI30M-050 6DI30M 6DI30MA 6DI50M 6DI50MA 6DI100M 0DD3722 transistor 75 U50 2DI50M-050 2DI100MA-050 M203 M208 M210 6DI100M-050 PDF

    TS802C06

    Abstract: No abstract text available
    Text: TS802C06 1OA <§ SCHOTTKY BARRIER DIODE I • O u tlin e D ra w in g Features • • • • Connection Diagram Surface mount device Lo w V f Super high speed switching High reliability by planer design H Applications • High speed power switching ■


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    TS802C06 500ns, 0D03bbci TS802C06 PDF

    Untitled

    Abstract: No abstract text available
    Text: S P E C I F I C A T I ON DEVICE NAHE :_ | g g j TYPE NAMF 1 M B H 5 0 — Of i O SPEC. No. MS 5 F 3 5 2 4 DATE : Jun. -25-1996 Fuji DATE DRAWN CHECKED NAME E l e c t r i c This Specification is subject to change without noti ce. APPROVED Fuji Electric CoJJd.


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    MS5F3524 0D04233 H04-004-07 H04-004-03 000ME41 PDF