223GD12E4C Search Results
223GD12E4C Price and Stock
SEMIKRON SEMIX223GD12E4CIgbt Module, Six, 1.2Kv, 333A; Continuous Collector Current:333A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX223GD12E4C |
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SEMIX223GD12E4C | Bulk | 2 |
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SEMIKRON SEMIX223GD12E4C 27890208Module: IGBT; transistor/transistor; IGBT three-phase bridge |
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SEMIX223GD12E4C 27890208 | 1 |
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223GD12E4C Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
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AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c |