527 225
Abstract: 527-225
Text: ARINC Series 400 Cannon 527-225 EMI/RFI 45° Split Backshell for Cannon SGA3 Connector TABLE II: FINISH OPTIONS 527 225 NF Product Series Symbol B C* G* J Basic Number Finish (Table I) LF .750 (19.1) Max M N 1.740 (44.2 ) Max NC NF T .900 (22.9) 2.090 (53.1) Max
|
Original
|
PDF
|
MIL-C--38999
527 225
527-225
|
Untitled
Abstract: No abstract text available
Text: SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 115 A Tc = 80°C 88 A 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 97 A Tc = 80°C 73 A 225 A -40 . 175 °C ICRM = 3xICnom VGES
|
Original
|
PDF
|
SEMiX71GD12T4s
|
GS8161Z18AT-300
Abstract: gs816
Text: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5
|
Original
|
PDF
|
GS8161Z18/36AT-300/275/250/225/200
GS8161Z18/36AT
100-pin
8161Z18A
GS8161Z18AT-300
gs816
|
Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - ZHL-1HLD Amplifier print this page ZHL-1HLD Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range VSWR Lw U Input no damage NF dB Typ. 225-400 23 ±1.00 +27.00 +27.00 +10.00 2.50
|
Original
|
PDF
|
|
FS225R17KE3
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
|
Original
|
PDF
|
FS225R17KE3
|
FS225R17KE3
Abstract: 2750A
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
|
Original
|
PDF
|
FS225R17KE3
2750A
|
FS225R17KE3
Abstract: 2750A
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
|
Original
|
PDF
|
|
Hitachi DSA002756
Abstract: No abstract text available
Text: 2SC5138 Silicon NPN Epitaxial ADE-208-225 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline 2SC5138 Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2SC5138
ADE-208-225
Hitachi DSA002756
|
M7A transistor
Abstract: transistor M7A
Text: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)
|
Original
|
PDF
|
MMBT2907AW
-600mA
2002/95/EC
IEC61249
OT-323
OT-323
MIL-STD-750
M7A transistor
transistor M7A
|
Untitled
Abstract: No abstract text available
Text: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)
|
Original
|
PDF
|
MMBT2907AW
OT-323
-600mA
2002/95/EC
IEC61249
MIL-STD-750
|
pin voltage of ic 393
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD444003 TECHNICAL DATA DATA SHEET 225, REV – Formerly part number SHD4463 SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN AN LCC-4 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
|
Original
|
PDF
|
SHD4463
SHD444003
pin voltage of ic 393
|
stocko mks
Abstract: frequency receiver circuits diagram transistor SMD FLO 14 LQP21A power amplifier circuit diagram with pcb layout Murata LQP21A balun sma SMD 0805 capacitor smd symbols transistor K 2333
Text: ICs for Communications Mixer/Amplifier PMB 2333 Receiver Application Board Application Note - Delta Sheet 11.96 Mixer/Amplifier PMB 2333 Receiver Application Board PMB 2333 AI AO LNA 1960 MHz Matching Matching ÎF out 225 MHz MI Matching + Balun Matching + Balun
|
Original
|
PDF
|
SMD/0603
SMD/0805
stocko mks
frequency receiver circuits diagram
transistor SMD FLO 14
LQP21A
power amplifier circuit diagram with pcb layout
Murata LQP21A
balun sma
SMD 0805 capacitor
smd symbols
transistor K 2333
|
BCW68GLT1
Abstract: No abstract text available
Text: BCW68GLT1 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max Unit PD 225 mW 1.8
|
Original
|
PDF
|
BCW68GLT1
r14525
BCW68GLT1/D
BCW68GLT1
|
HT506
Abstract: HT506DC HT507 HT507DC
Text: HTMOSTM High Temperature Products Preliminary HIGH TEMPERATURE ANALOG MULTIPLEXERS 16-CHANNEL SINGLE / 8-CHANNEL DUAL FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Break-Before-Make Switching • Avionics • No Latch-up
|
Original
|
PDF
|
16-CHANNEL
HT506/507
HT506/507
HT507DC
HT506
HT506DC
HT507
HT507DC
|
|
|
Untitled
Abstract: No abstract text available
Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
PDF
|
GA05JT03-46
GA05JT03
8338E-48
0733E-26
16E-10
021E-10
050E-2
|
Untitled
Abstract: No abstract text available
Text: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 100 mAdc Symbol Max Unit PD 225
|
Original
|
PDF
|
MMBT2484LT1
|
MMBF5460LT1
Abstract: No abstract text available
Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8
|
Original
|
PDF
|
MMBF5460LT1
236AB)
r14525
MMBF5460LT1/D
MMBF5460LT1
|
PN544
Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300
|
OCR Scan
|
PDF
|
T-29-Of
T-29-01
PN544
TI59
national 2N3859
2N2712
2N915
MPQ2222
MPQ6700
T1890
TN2219
PN101
|
2n3391 complement
Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
Text: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA
|
OCR Scan
|
PDF
|
2N2711
2N2712
2N2713
2N2714
150mA
2N2923
2N2924
2N2925
2N531D
2N5311
2n3391 complement
2N3391
2N2926
|
2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
PDF
|
2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
|
n3860
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
|
OCR Scan
|
PDF
|
2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
n3860
|
Untitled
Abstract: No abstract text available
Text: SIEMENS DL3416 .225" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display With Memory/Decoder/Driver Preliminary Date Sheet Package Dimensions in Inches mm ( 15.24) pin 1 indicator part no. EIA date code intensity code FEATURES nmmnnn
|
OCR Scan
|
PDF
|
DL3416
DL3416
fl23b32b
|
Untitled
Abstract: No abstract text available
Text: ANALOGIC The Worid Resource for Precision Signal Technology % n SHA2200 % High-Speed, 225 ns High Accuracy Wideband Sample-and-Hold Amplifier Performance Features Features The SHA2200 is a fast precision sample-and-hold amplifier, featuring an acquisition time of
|
OCR Scan
|
PDF
|
SHA2200
SHA2200
ADC3110
14-bit
|
Untitled
Abstract: No abstract text available
Text: Honeywell Preliminary HTMOS High Temperature Products HIGH TEMPERATURE ANALOG MULTIPLEXERS 16-CHANNEL SINGLE / 8-CHANNEL DUAL FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Break-Before-Make Switching • Avionics • No Latch-up
|
OCR Scan
|
PDF
|
16-CHANNEL
HT506/507
HT506/507
HT507DC
|
