JESD22-B111
Abstract: JESD22B111 IPC-SM-785 ALIVH PCB ALIVH IPC-SM785 AN-1412 1412 SMD NI
Text: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。
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AN-1412
JESD22-B111
JESD22B111
IPC-SM-785
ALIVH PCB
ALIVH
IPC-SM785
AN-1412
1412
SMD NI
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0.3mm pitch csp package
Abstract: 0.3mm pitch package bga 0.3mm pitch BGA jp smd code AN100926-26-JP AN-1112 micro pitch BGA ALIVH ic micro AN1112
Text: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。
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AN-1112
0.3mm pitch csp package
0.3mm pitch package bga
0.3mm pitch BGA
jp smd code
AN100926-26-JP
AN-1112
micro pitch BGA
ALIVH
ic micro
AN1112
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INCOMING PACKAGING MATERIAL INSPECTION form
Abstract: MIL-STD-105C underfill 45X45mm motherboard major problems & solutions Low viscosity underfill for flip chip
Text: FUJITSU/SUN MICROSYSTEMS ULTRASPARC-IIi MCM: MINIATURIZATION TO THE EXTREME Michelle Hou Fujitsu San Jose, CA USA Takashi Ozawa Fujitsu Kawasaki, JAPAN Dev Malladi, Chris Furman, Mary Krebser, Steve Boyle, Mohsen Saneinejad Sun Microsystems Palo Alto, CA USA
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300MHz
45mmx45mems)
0-100C)
INCOMING PACKAGING MATERIAL INSPECTION form
MIL-STD-105C
underfill
45X45mm
motherboard major problems & solutions
Low viscosity underfill for flip chip
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AN-1112
Abstract: 0.3mm pitch BGA ALIVH 0.3mm pitch csp package SMD CODE AN-1112 national
Text: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。
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AN-1112
AN-1112
0.3mm pitch BGA
ALIVH
0.3mm pitch csp package
SMD CODE
AN-1112 national
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X band 5-bit phase shifter
Abstract: digital phase shifter mhz MA03503D x-Band High Power Amplifier phase shifter
Text: MA03503D X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die High Dynamic Range Features •= •= Advanced Information Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance RF Out RF In •= Self-Aligned MSAG MESFET Process
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MA03503D
MA03503D
150um
150um
125um
125um
225um
X band 5-bit phase shifter
digital phase shifter mhz
x-Band High Power Amplifier
phase shifter
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X band 5-bit phase shifter
Abstract: MA03501D phase shifter
Text: MA03501D X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die FEATURES •= •= Advanced Information Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance RF O ut R F In •= Self-Aligned MSAG MESFET Process
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MA03501D
MA03501D
150um
150um
225um
X band 5-bit phase shifter
phase shifter
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ALIVH
Abstract: 0.3mm pitch csp package ALIVH PCB AN-1112 IPC-SM-785 0.3mm pitch BGA SMD Devices SMD CODE 185M wlcsp SMT
Text: ご注意：日本語のアプリケーション・ノートは参考資料として提供しており内容が 最新でない場合があります。製品のご使用に際しては、必ず最新の英文アプ リケーション・ノートをご確認ください。
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AN-1112
ALIVH
0.3mm pitch csp package
ALIVH PCB
AN-1112
IPC-SM-785
0.3mm pitch BGA
SMD Devices
SMD CODE
185M
wlcsp SMT
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Untitled
Abstract: No abstract text available
Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373502D FEATURES • • • ADVANCED INFORMATION Phase Shifter /Attenuator RF Out RF In 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process
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ITT373502D
ITT373502D
150umX150um
225um
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AAP149B
Abstract: aai 8 pin smd digital electret microphone r149 AAP149X preamplifier with pdm output Microphone ECM Pre-Amplifier
Text: Portable Electronics AAP149X AAP149B PRELIMINARY DATASHEET Digital Electret Microphone ECM Pre-Amplifier DESCRIPTION FEATURES The AAP149B Digital ECM Pre Amplifiers is part of an expanding line of mobile audio amplifiers. The core of the design includes the same Pre-Amplifier
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AAP149X
AAP149B
AAP149B
20kHz
1290-B
2010-ASIC
AADS00028
aai 8 pin smd
digital electret microphone
r149
AAP149X
preamplifier with pdm output
Microphone ECM Pre-Amplifier
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ITT373502D
Abstract: No abstract text available
Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373502D FEATURES • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF Out RF In
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ITT373502D
ITT373502D
150umX150um
125umX125um
225um
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Untitled
Abstract: No abstract text available
Text: Laser Diodes High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Multi-junction devices up to 75 W 75 µm, 150 µm and 225 µm source size 2.6 W/A efficiency Proven InGaAs / GaAs high reliability structure
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905D1S3J0XX
lcc/9051s3j0xx
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Untitled
Abstract: No abstract text available
Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D Features • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process
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ITT373503D
ITT373503D
150umX150um
225um
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r0402
Abstract: Phycomp 2238 Phycomp C0402 Phycomp 2322 2238-787-15636 BLM11P300S Resistors 2322 Phycomp Dielectric constant FR4 obo27 2322 phycomp
Text: APPLICATION NOTE OM5815 demoboard for the TZA2080 68*68, 3.2Gb/s crosspoint switch AN01020 Y R DRAFT I A N M I L P E R Philips Semiconductors OM5815 demoboard for the TZA2080 68*68, 3.2Gb/s crosspoint switch Application Note AN01020 Abstract This application note describes demoboard OM5815. This demoboard is designed for customer demonstration of
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OM5815
TZA2080
AN01020
OM5815.
r0402
Phycomp 2238
Phycomp C0402
Phycomp 2322
2238-787-15636
BLM11P300S
Resistors 2322 Phycomp
Dielectric constant FR4
obo27
2322 phycomp
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phase shifter
Abstract: ITT373503D
Text: X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D Features • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process
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ITT373503D
ITT373503D
150umX150um
125umX125um
225um
phase shifter
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Untitled
Abstract: No abstract text available
Text: Portable Electronics AAP149X AAP149B PRELIMINARY DATASHEET Digital Electret Microphone ECM Pre-Amplifier DESCRIPTION FEATURES The AAP149B Digital ECM Pre Amplifiers is part of an expanding line of mobile audio amplifiers. The core of the design includes the same Pre-Amplifier
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AAP149X
AAP149B
AAP149B
20kHz
1290-B
2010-ASIC
AADS00028
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X band 5-bit phase shifter
Abstract: No abstract text available
Text: MA03501 X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die FEATURES • • • Preliminary Release Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input and Output Impedance RF O ut R F In Self-Aligned MSAG MESFET Process
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MA03501
MA03501D
150um
225um
X band 5-bit phase shifter
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IPC-SM-785
Abstract: ALIVH JESD22-B111 pitch 0.4mm BGA JESD22B111 AN-1412 1NSMD ALIVH PCB
Text: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。
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Original
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AN-1412
IPC-SM-785
ALIVH
JESD22-B111
pitch 0.4mm BGA
JESD22B111
AN-1412
1NSMD
ALIVH PCB
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905D1S
Abstract: 905D1S3 905D1S3J0XX 905D1S3J03X 905D1S3J09X 905D1S3J06X
Text: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES • Multi-junction devices up to 75 W • 75 m, 150 μm and 225 μm source size 2.6 W/A efficiency Proven InGaAs / GaAs high reliability structure High power multi-junction structure for narrow far
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905D1S3J0XX
9051s3j0xx
905D1S
905D1S3
905D1S3J0XX
905D1S3J03X
905D1S3J09X
905D1S3J06X
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