Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    22AUG05 Search Results

    22AUG05 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TEKS5400

    Abstract: TEKT5400S TSKS5400S
    Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.


    Original
    TSKS5400S TSKS5400S TEKT5400S TEKS5400 TEKS5400 20contain D-74025 22-Aug-05 PDF

    AN609

    Abstract: Si2314EDS
    Text: Si2314EDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si2314EDS AN609 22-Aug-05 PDF

    AN609

    Abstract: Si2307BDS
    Text: Si2307BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si2307BDS AN609 22-Aug-05 PDF

    Si4834BDY

    Abstract: 70315
    Text: SPICE Device Model Si4834BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4834BDY 18-Jul-08 70315 PDF

    AN609

    Abstract: Si2312DS
    Text: Si2312DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si2312DS AN609 22-Aug-05 PDF

    RCA1206

    Abstract: RCA0805 20034 RCA2010 RCA1210 RCA2512
    Text: RCA Vishay Automotive Grade Thick Film, Rectangular Chip Resistors FEATURES • Metal glaze on high quality ceramic with protective overglaze • Sulfur resistant • Superior resistance against H2S-atmosphere than standard Ag contacts • Solder contacts on Ni barrier layer


    Original
    40401-802/EIA-575 200overload 22-Aug-05 RCA1206 RCA0805 20034 RCA2010 RCA1210 RCA2512 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7455DP Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7455DP 18-Jul-08 PDF

    mosfet 4501

    Abstract: Datasheet 4449 200nf capacitor SI2328 AN609 Si2328DS
    Text: Si2328DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si2328DS AN609 22-Aug-05 mosfet 4501 Datasheet 4449 200nf capacitor SI2328 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEKS5400 Vishay Semiconductors Silicon Photodetector with Logic Output Description TEKS5400 is a high sensitive Photo Schmitt Trigger in a molded flat sideview plastic package with spherical lens. The integrated infrared filter is spectrally matched to GaAs IR emitters wave length of 950 nm.


    Original
    TEKS5400 TEKS5400 TSKS5400-FSZ, 950nm 08-Apr-05 PDF

    SUD50P10-43L-E3

    Abstract: SUD50P10-43L SUD50P10
    Text: SUD50P10-43L New Product Vishay Siliconix P-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.043 @ VGS = –10 V –37 0.048 @ VGS = –4.5 V –35 VDS (V) –100 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:


    Original
    SUD50P10-43L O-252 SUD50P10-43L--E3 51510--Rev. 22-Aug-05 SUD50P10-43L-E3 SUD50P10-43L SUD50P10 PDF

    si7489dp

    Abstract: V5013
    Text: SPICE Device Model Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7489DP S-51549Rev. 22-Aug-05 V5013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSKS5400-FSZ Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400-FSZ is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile case.


    Original
    TSKS5400-FSZ TSKS5400-FSZ TEKT5400S TEKS5400 TEKT5400S 2002/95/EC D-74025 22-Aug-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEKS5400 Vishay Semiconductors Silicon Photodetector with Logic Output Description TEKS5400 is a high sensitive Photo Schmitt Trigger in a molded flat sideview plastic package with spherical lens. The integrated infrared filter is spectrally matched to GaAs IR emitters wave length of 950 nm.


    Original
    TEKS5400 TEKS5400 TSKS5400-FSZ, 950nm D-74025 22-Aug-05 PDF

    Si7457DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7457DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7457DP 18-Jul-08 PDF

    Si7489DP

    Abstract: 51549R
    Text: SPICE Device Model Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7489DP 18-Jul-08 51549R PDF

    AN609

    Abstract: Si2316DS
    Text: Si2316DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si2316DS AN609 22-Aug-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC DIST CF 39 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 R E V IS IO N S LTR DATE DWN 22AUG05 BX DESCRIPTION A REVISION PER ECR —05 —00731 0 APVD D 6.00 + .25 - no CJ a I


    OCR Scan
    22AUG05 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 5 4 2 3 PUBLICATION RIGHTS LOC RESERVED. 00 CM BY TYCO ELECTRONICS CORPORATION. REVISIONS D IST LTR D E SC RIPTIO N C 6.10 D BSV RCJ 22AUG05 EC 0G3B 0 2 1 3 05 APVD D CIRC UIT CIRC UIT


    OCR Scan
    22AUG05 24JUL03 UL94V-0 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 00 LTR DESCRIPTION C DATE DWN BSV RCJ 22AUG05 EC 0G3B 0213 05 APVD D D C IR C U IT C IR C U IT #12 #1


    OCR Scan
    22AUG05 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS - 2 - LOC RESERVED. R E VIS IO N S DIST CM 00 BY TYCO ELECTRONICS CORPORATION. LTR E1 D E SC RIPTIO N DATE EC 0G3B 0 2 1 4 05 DWN 22AUG05 17 .0 4 APVD BSV CJ D D 0 .0 0 0 7 6


    OCR Scan
    22AUG05 15mm2 05MAR03 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION RIGHTS - - RES ER VED . LOC D IS T GP 00 REVISIO N S LTR D E S C R IP TIO N 1. THE CONTACT SURFACES WITH LUBRICANT. ATERIAL: i r r r r r r r r


    OCR Scan
    22AUG05 AR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST GP 00 LTR B 36X OPTIONAL GROUNDING PAD MUST CONTACT SCREW HEAD 0 .0 3 2 DESCRIPTION REVISED PER E C O -08- 007327


    OCR Scan
    22AUG05 31MAR2000 PDF

    0-928959-6

    Abstract: 19-or
    Text: 4 i RELEASED FOR PUBLICATION THJS DR/4 IVIN£ IS UNPUBL Ibh'tD. FREI FUER VEROEFFENTLICHUNG VERTRAULICHE UWVEROEFFENTLJCHTE ZEICHNUNG BY INCORPORATED COPYRIGHT 19or AMP flnp nlukkuka icu. A[_LE RIGHTS RECH7E RESERVED. VORBEHALTEN i 3 ,Ì 9 - . 2 MATED WITH:


    OCR Scan
    8-AUG-05 928959-4/-S/-9 14-5EP-05 27JUN96 M-SfP-05 eq00S842 0-928959-6 19-or PDF

    MIL-M-24519

    Abstract: No abstract text available
    Text: 7 8 4 3 2 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC C iO -2 5 R EV ISIO N S DIST AJ 1 6 jY p LTR DESCRIPTION A ^ [ + . 0 1 o ] ' TK DATE REVISED PER EC 0S1 4 - 0 1 5 0 - 0 5 DWN


    OCR Scan
    26APR2005 31MAR2000 MIL-M-24519 PDF