Q002
Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Text: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical
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M29W800FT
M29W800FB
64-bit
Q002
M29W800FT
TFBGA48
TSOP48 outline
m29w800f
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ST M29W800DT
Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks
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M29W800DT
M29W800DB
512Kb
64-and
ST M29W800DT
M29W800D
M29W800DB
M29W800DT
TFBGA48
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE -90/12 • GENERAL DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
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DS05-20882-1E
MBM29LV650UE/651UE
64M-bit,
D-63303
F9912
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EN29LV640B
Abstract: EN29LV640T EN29LV641H EN29LV641L
Text: Eon Silicon Solution Inc. Page 1/7 EN29LV640T/B VS EN29LV641H/L 64Mb FLASH SPEC COMPARISON Part No. : EN29LV640T/B Issued date : 2008 / 04 / 15 Prepared by : FAE Engineer：Sunny Tai Approval by : FAE Manager：Jason Tseng This Application Note may be revised by subsequent
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EN29LV640T/B
EN29LV641H/L
EN29LV640T/B
EN29LV641H/L.
EN29LV641H/L,
22D7h
XX01h
EN29LV640B
EN29LV640T
EN29LV641H
EN29LV641L
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MB29LV
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-3E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE 90/12 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
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DS05-20882-3E
MBM29LV650UE/651UE
64M-bit,
F0206
MB29LV
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marking code M19
Abstract: SA1-141 DS05 FPT-48P-M19 FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 SA127
Text: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され
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MBM29LV650UE90
MBM29LV651UE90
MBM29LV650UE/651UE
16bit
MBM29LV650UE90/651UE90
MBM29LV650UE90/MBM29LV651UE90
F48030S-c-6-7
marking code M19
SA1-141
DS05
FPT-48P-M19
FPT-48P-M20
MBM29LV650UE
MBM29LV650UE90
MBM29LV651UE
MBM29LV651UE90
SA127
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sga31
Abstract: SA124 MBM29LV650UE-90 tRH10 DS05 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 Marking code M19
Text: MBM29LV650UE90/MBM29LV651UE90 データシート 生産終息品 MBM29LV650UE90/MBM29LV651UE90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29LV650UE90/MBM29LV651UE90
MBM29LV650UE90/MBM29LV651UE90
DS05-20882-6
DS05-20882-6none
MBM29LV650UE90
MBM29LV651UE90
MBM29LV650UE/651UE
sga31
SA124
MBM29LV650UE-90
tRH10
DS05
MBM29LV650UE
MBM29LV650UE90
MBM29LV651UE
MBM29LV651UE90
Marking code M19
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Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV640D/Am29LV641D
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PDF
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Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV640D/Am29LV641D
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PDF
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Untitled
Abstract: No abstract text available
Text: MBM29LV652UE90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV652UE90
F0305
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PDF
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Untitled
Abstract: No abstract text available
Text: Am29LV642D Data Sheet For new designs, S29GL128N supersedes Am29LV642D and is the factory-recommended migration path for this device. Please refer to the S29GL128N datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV642D
S29GL128N
S29GL128N.
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20886-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV652UE -90/12 • GENERAL DESCRIPTION The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP
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DS05-20886-1E
MBM29LV652UE
64M-bit,
MBM29LV652UEbe
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M29W800FT
Abstract: No abstract text available
Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns, 90 ns (only available
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M29W800FT
M29W400FT
M29W800FB
M29W400FB
64-bit
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV640U 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 16 byte structure • One hundred twenty-eight Equal Sectors with 32K word each - Any combination of sectors can be erased with erase
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MX29LV640U
64M-BIT
128-word
prohibite640U
OCT/09/2002
PM0744
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV640BU 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 16 byte structure • One hundred twenty-eight Equal Sectors with 32K word each - Any combination of sectors can be erased with erase
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MX29LV640BU
64M-BIT
128-word
PM1081
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AM29LV065D
Abstract: AM29LV641DHL AMD VID
Text: Migrating from Single-byte to Threebyte Device IDs Application Note -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
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FPT-48P-M19
Abstract: FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90
Text: MBM29LV650UE90/651UE90 Data Sheet Retired Product MBM29LV650UE90/651UE90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29LV650UE90/651UE90
MBM29LV650UE90/651UE90
DS05-20882-6E
FPT-48P-M19
FPT-48P-M20
MBM29LV650UE
MBM29LV650UE90
MBM29LV651UE
MBM29LV651UE90
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l640du90r
Abstract: L640DU90RI L640DU90
Text: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
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Am29LV640D/Am29LV641D
16-Bit)
128-word
56-pin
Am29LV640DH/DL
l640du90r
L640DU90RI
L640DU90
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Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
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Am29LV640D/Am29LV641D
16-Bit)
128-word
64-ball
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A15F6
Abstract: AM29LV641DL90
Text: ADVANCE INFORMATION Am29LV640DU/Am29LV641DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read, erase, and program operations
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Am29LV640DU/Am29LV641DU
16-Bit)
128-word
56-pin
A15F6
AM29LV641DL90
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
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Am29LV640D/Am29LV641D
16-Bit)
128-word
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29LV641
Abstract: 29LV640D
Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards
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OCR Scan
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
TSR048--
16-038-TS48
TSR048
29LV640D
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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OCR Scan
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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29lv641
Abstract: No abstract text available
Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations
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OCR Scan
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
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PDF
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