HL6321
Abstract: No abstract text available
Text: HL6321/22G AlGaInP Laser Diodes Description The HL6321/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers
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HL6321/22G
HL6321/22G
635nm
HL6321/22G:
HL6321G
HL6322G
HL6321
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HL6321G
Abstract: HL6322G Hitachi DSA00230
Text: HL6321G/22G AlGaInP Laser Diodes ADE-208-598C Z 4th Edition Dec. 2000 Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6321G/22G
ADE-208-598C
HL6321G/22G
HL6321G/22G:
HL6321G
HL6322G
HL6321G
HL6322G
Hitachi DSA00230
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Untitled
Abstract: No abstract text available
Text: HL6321/22G AlGaInP Laser Diodes Description The HL6321/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers
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HL6321/22G
HL6321/22G
635nm
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HL6321G
Abstract: HL6322G
Text: HL6321G/22G ODE-208-028A Z Rev.1 Oct. 24, 2006 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6321G/22G
ODE-208-028A
HL6321G/22G
HL6321G/22G:
HL6321G
HL6322G
HL6321G
HL6322G
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Untitled
Abstract: No abstract text available
Text: HL6321G/22G ODE-208-028B Z Rev.2 Feb. 01, 2008 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6321G/22G
ODE-208-028B
HL6321G/22G
HL6321G/22G:
HL6321G
HL6322G
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HL6321G
Abstract: HL6322G
Text: HL6321G/22G AlGaInP Laser Diodes ODE-208-598D Z Rev.4 Jan. 2003 Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6321G/22G
ODE-208-598D
HL6321G/22G
HL6321G/22G:
HL6321G
HL6322G
HL6321G
HL6322G
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Untitled
Abstract: No abstract text available
Text: HL6321G/22G ODE2012-00 M Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6321G/22G
HL6321G/22G
ODE2012-00
HL6321G/22G:
HL6321G
HL6322G
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Untitled
Abstract: No abstract text available
Text: HL6321G/22G ODE-208-028A Z Rev.1 Oct. 24, 2006 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6321G/22G
HL6321G/22G
ODE-208-028A
HL6321G/22G:
HL6321G
HL6322G
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL6321G/22G AIGaInP Laser Diode 638nm/15mW Features: Outline • Optical output power: 15mW CW Visible light output: 638nm Typ. Low operating current: 100mA Max. Low operating voltage: 2.7V Max. TM mode oscillation Single transverse mode
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HL6321G/22G
638nm/15mW
638nm
100mA
HL6321G/22G
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P8B-D04-22G-525
Abstract: No abstract text available
Text: Yokohama Electron LED Lighting Solutions P8B-D04-22G-525 １ ． Part Number: RoHS Compliant Color： Green ２ ． Outer Dimensions / LED wiring diagram / Recommended pattern SMD TYPE DIP TYPE φ0.7 φ7.0 φ6.0 Cathode 4.6 ESD Protection Diode 2.5 2
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P8B-D04-22G-525
PYDC-07011341-A01
YS-172
1-P8B-D04-22G-525
YDC-07011341-A01
P8B-D04-22G-525
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HL6321
Abstract: No abstract text available
Text: Data Sheet HL6321G/22G AIGaInP Laser Diode Outline 638nm/15mW Features: • Optical output powr: 15mW CW Visible light output: 638nm Typ. Low operating current: 100mA Max. Low operating voltage: 2.7V Max. TM mode oscillation Single transverse mode
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HL6321G/22G
638nm
100mA
638nm/15mW
HL6321G/22G
HL6321
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Untitled
Abstract: No abstract text available
Text: 1N286A Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX-K Test Freq16G Frequency Min. (Hz)10G Frequency Max. (Hz)22G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max.2.0 Noise Figure Max. (dB)
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1N286A
Freq16G
Min250
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Untitled
Abstract: No abstract text available
Text: 1S2789 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.11p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage28 Q Factor Min.47 f(co) Min. (Hz) Cut-off freq.22G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleN/A Mounting Style-
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1S2789
Voltage28
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT160 Unit : mm Weight : 22g typ. Package TSB-5PIN 1600V 45A • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 160 0264 ∼ ∼ 27 ∼ − 管理番号（例）
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D45XT160
E142422
D45XT
J534-1
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 45A 品名 Type No. • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 80 0264 ∼ ∼ 27 ∼ −
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D45XT80
E142422
D45XT
J534-1
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D30XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 30A 品名 Type No. • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D30XT 80 0264 ∼ ∼ 27 ∼ −
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D30XT80
E142422
D30XT
0XT80
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D45X
Abstract: 330 marking diode SHINDENGEN DIODE SHINDENGEN
Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422
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D45XT160
E142422
D45XT
J534-1
D45X
330 marking diode
SHINDENGEN DIODE
SHINDENGEN
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422
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D45XT160
E142422
D45XT
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Untitled
Abstract: No abstract text available
Text: 大容量 シングルインライン型 Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D50XB80 Unit : mm Weight : 22g （typ.） Package：TSB-4PIN 800V 50A 特長 品名 Type No. • 薄型 SIP パッケージ • UL E142422 • 高耐圧・高 IFSM
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D50XB80
E142422
D50XB
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D30XT80
Abstract: No abstract text available
Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D30XT80 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 800V 30A 特長 品名 Type No. • ３相ブリッジ • 薄型 SIP パッケージ
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D30XT80
E142422
D30XT
J534-1
D30XT80
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Untitled
Abstract: No abstract text available
Text: HL6321/22G AlGalnP Laser Diodes H IT A C H I Description The HL6321/22G are 0.63 |am band AlGalnP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application
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HL6321/22G
HL6321/22G
635nm
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laser diodes hitachi
Abstract: Hitachi laser diodes
Text: HL6321/22G AlGalnP Laser Diodes HITACHI Description The HL6321/22G are 0.63 J im band AlGalnP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers
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HL6321/22G
HL6321/22G
635nm
laser diodes hitachi
Hitachi laser diodes
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801R2AN
Abstract: SML801R2AN SML751R2AN NC160 22G diode SML751R4AN SML801R4AN 801R4AN
Text: SEMELÂB PLC bOE D fll331û? OGOG77fl 22G ISMLB MOS POWER à IN I SML801R2AN SML751R2AN SML801R4AN SML751R4AN SEME LAB 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20Q 1.2011 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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OGOG77fl
SML801R2AN
SML751R2AN
SML801R4AN
SML751R4AN
751R2
801R2AN
751R4AN
801R4AN
TQ-204AA)
NC160
22G diode
801R4AN
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C30T03QL C30T03QL-11A 33A/30V FEATU RES o | SQ UA RE-PA K I TO-263AB SMD Packaged in 24mm Tape and Reel : C30T03QL o Tabless TO-22G C30T03QL-11A o Dual Diodes - C athode Com m on ° Low Forw ard Voltage D rop ° H igh Surge Capability
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O-263AB
C30T03QL
O-22G
C30T03QL-11A
3A/30V
C30T03QL-11A
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