Untitled
Abstract: No abstract text available
Text: Si3420DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V "0.5 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
PDF
|
Si3420DV
S-99345--Rev.
22-Nov-99
|
Si5443DC
Abstract: No abstract text available
Text: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX
|
Original
|
PDF
|
Si5443DC
S-99362--Rev.
22-Nov-99
|
SI3872DV
Abstract: No abstract text available
Text: Si3872DV New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –20 ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V "1.3 30 P-Channel rDS(on) (W) D1 S2
|
Original
|
PDF
|
Si3872DV
S-99340--Rev.
22-Nov-99
|
SI4953ADY
Abstract: No abstract text available
Text: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.090 @ VGS = –4.5 V "3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET
|
Original
|
PDF
|
Si4953ADY
S-999343--Rev.
22-Nov-99
|
SI3872DV
Abstract: si3872
Text: Si3872DV New Product Vishay Siliconix N-Channel 30-V and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –20 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V
|
Original
|
PDF
|
Si3872DV
18-Jul-08
si3872
|
RLR05C
Abstract: RLR07C MIL-PRF-39017 vishay dale Model HN vishay rlr05c RLR RESISTORS hn-07 HN07
Text: Model HN Vishay Dale Metal Film Resistors Military/Established Reliability MIL-PRF-39017 Qualified, Type RLR, Semi-Precision FEATURES • “R” level failure rate. • High purity copper leads in accordance with MIL-STD-1276. Electroplated 60/40 solder finish.
|
Original
|
PDF
|
MIL-PRF-39017
MIL-STD-1276.
MILPRF-39017
RLR05C
RLR07C
RLR05
RLR07
22-Nov-99
RLR07C
vishay dale Model HN
vishay rlr05c
RLR RESISTORS
hn-07
HN07
|
datasheet for 4x4 keyboard
Abstract: diode matrix rom 4x4 keyboard Book Microelectronic keyboard 4X4 register AN01 AN03 AN04 AN06
Text: EM MICROELECTRONIC - MARIN SA AppNotes Application notes Subject Frequency Ask Questions How to rotate left a register through carry How to rotate right a register through carry How to increment or decrement the index register How to rotate left a large buffer in
|
Original
|
PDF
|
16-bits
EM6X20
22-sept-98
23-sept-98
03-dec-98
datasheet for 4x4 keyboard
diode matrix rom
4x4 keyboard
Book Microelectronic
keyboard 4X4
register
AN01
AN03
AN04
AN06
|
Untitled
Abstract: No abstract text available
Text: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX
|
Original
|
PDF
|
Si5443DC
S-99362--Rev.
22-Nov-99
|
Si3420DV
Abstract: No abstract text available
Text: Si3420DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V "0.5 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
PDF
|
Si3420DV
S-99345--Rev.
22-Nov-99
|
Si3455ADV
Abstract: No abstract text available
Text: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET
|
Original
|
PDF
|
Si3455ADV
S-99350--Rev.
22-Nov-99
|
Untitled
Abstract: No abstract text available
Text: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET
|
Original
|
PDF
|
Si3455ADV
S-99350--Rev.
22-Nov-99
|
Untitled
Abstract: No abstract text available
Text: Si3872DV New Product Vishay Siliconix N-Channel 30-V and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –20 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V
|
Original
|
PDF
|
Si3872DV
08-Apr-05
|
MPF102 switch application
Abstract: No abstract text available
Text: U4256BM Frequency Synthesizer for Radio Tuning Description The U4256BM is a synthesizer IC for FM receiver and an AM up-convertion system in BICMOS technology. Together with the AM/FM IC U4255BM, it performs a complete AM/FM car radio front end, which is recommended also for RDS Radio Data System
|
Original
|
PDF
|
U4256BM
U4256BM
U4255BM,
16-bit
D-74025
22-Nov-99
MPF102 switch application
|
Si1305DL
Abstract: No abstract text available
Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si1305DL
22-Nov-99
|
|
Untitled
Abstract: No abstract text available
Text: CO 7 THIS 0 DRAWING IS UNPUBLISHED. RELEASED COPYRIGHT ALL FOR 2 PUBLICATION Rlt,HTi LOC REV I S I O N S D I ST 00 RESERVED. LTR DE S C R I P T I O N REVISED P ER ECO-11-005294 D1 DWN DATE 20APR11 RK APVD HMR M A T E R I A L : JACK HOUSING - P O L YP HE N YL E NE O X I D E , 9 4 V -0 RATED.
|
OCR Scan
|
PDF
|
ECO-11-005294
20APR11
T568B
22NOV99
22NOV99
|