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    22R1A Price and Stock

    Schneider Electric RE22R1ACMR

    RELAY TIME DELAY 300HR 8A 250V
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    DigiKey RE22R1ACMR Box 2 1
    • 1 $96.25
    • 10 $84.077
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    Mouser Electronics RE22R1ACMR 3
    • 1 $94.76
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    Newark RE22R1ACMR Bulk 1
    • 1 $108.19
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    RS RE22R1ACMR Bulk 1 1 Weeks 1
    • 1 $97.21
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    TME RE22R1ACMR 4 1
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    Schneider Electric RE22R1AKMR

    RELAY TIME DELAY 300HR 8A 250V
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    DigiKey RE22R1AKMR Box 1 1
    • 1 $131.52
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    Mouser Electronics RE22R1AKMR 11
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    Newark RE22R1AKMR Bulk 1
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    RS RE22R1AKMR Bulk 1 1 Weeks 1
    • 1 $132.84
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    TME RE22R1AKMR 7 1
    • 1 $48.65
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    Schneider Electric RE22R1AMR

    RELAY TIME DELAY 300HR 8A 250V
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    DigiKey RE22R1AMR Box 1
    • 1 $82.9
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    Mouser Electronics RE22R1AMR 23
    • 1 $59.75
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    Newark RE22R1AMR Bulk 3 1
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    RS RE22R1AMR Bulk 1 7 Weeks 1
    • 1 $86.22
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    Onlinecomponents.com RE22R1AMR 8
    • 1 $59.45
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    TME RE22R1AMR 31 1
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    Master Electronics RE22R1AMR 8
    • 1 $59.45
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    YAGEO Corporation RWP502FK-13-22R1AA

    Thick Film Resistors - SMD 2.2Wat 22.1 Ohms 22R1 1% AEC-Q200
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    Mouser Electronics RWP502FK-13-22R1AA
    • 1 -
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    Eaton Cutler-Hammer D26MRD22R1 (ALTERNATE: D26MRD22R1)

    D26 TYPE M RELAY | Eaton - Cutler Hammer D26MRD22R1
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    RS D26MRD22R1 (ALTERNATE: D26MRD22R1) Bulk 5 Weeks 1
    • 1 $1120.67
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    Find more 22R1A price and stock on Findchips.com

    22R1A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    22R1A Series Unknown Basic Transistor and Cross Reference Specification Scan PDF

    22R1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5H16TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications • 1.8-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings


    Original     		SSM5H16TU PDF

    SSM5H07TU

    Abstract: No abstract text available
    Text: SSM5H07TU Silicon N Channel MOS Type π-MOSⅣ /Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5H07TU SSM5H07TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5H11TU Silicon N Channel MOS Type U-MOS /Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications • 4.0-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings


    Original     		SSM5H11TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5H07TU Silicon N Channel MOS Type -MOS /Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5H07TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET


    Original     		SSM5G09TU PDF

    MA851

    Abstract: No abstract text available
    Text: SSM5H05TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm • Combined Nch MOSFET and Schottky Diode in one package. • Low RDS (ON) and low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5H05TU 125IBA MA851 PDF

    SSM5H16TU

    Abstract: No abstract text available
    Text: SSM5H16TU 東芝複合素子 シリコンNチャネルMOS形 + エピタキシャルショットキバリア形 SSM5H16TU ○ DC-DC コンバータ • • • 単位: mm 1.8 V 駆動です。 Nch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5H16TU SSM5H16TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5H08TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5H08TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5H11TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications • 4.0-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings


    Original     		SSM5H11TU PDF

    SSM5H10TU

    Abstract: FET PR 32
    Text: SSM5H10TU 東芝複合素子 シリコンNチャネルMOS形 + エピタキシャルショットキバリア形 SSM5H10TU ○ DC-DC コンバータ • • • 単位: mm 1.5V 駆動です Nch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5H10TU SSM5H10TU FET PR 32 PDF

    SSM5H05TU

    Abstract: No abstract text available
    Text: SSM5H05TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm • Combined Nch MOSFET and Schottky Diode in one package. • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET


    Original     		SSM5H05TU SSM5H05TU PDF

    SSM5G10TU

    Abstract: No abstract text available
    Text: SSM5G10TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • 1.8-V drive • Combines a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Unit: mm


    Original     		SSM5G10TU SSM5G10TU PDF

    SSM5H01TU

    Abstract: Vgs mosfet MOSFET VRM
    Text: SSM5H01TU 東芝複合素子 シリコンNチャネルMOS形 U-MOS-Ⅲ + エピタキシャルショットキバリア形 SSM5H01TU ○ DC-DC コンバータ 単位: mm • Ｎch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5H01TU SSM5H01TU Vgs mosfet MOSFET VRM PDF

    tns-3

    Abstract: SSM5H05TU
    Text: SSM5H05TU 東芝複合素子 シリコンNチャネルMOS形 U-MOS-Ⅲ + エピタキシャルショットキバリア形 SSM5H05TU ○ DC-DC コンバータ • • 単位: mm Ｎch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5H05TU tns-3 SSM5H05TU PDF

    14ker

    Abstract: SSM5H08TU
    Text: SSM5H08TU 東芝複合素子 シリコンNチャネルMOS形 U-MOS-Ⅲ + エピタキシャルショットキバリア形 SSM5H08TU ○ DC-DC コンバータ • • 単位: mm Nch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5H08TU 14ker SSM5H08TU PDF

    SSM5H11TU

    Abstract: No abstract text available
    Text: SSM5H11TU シリコンNチャネルMOS形 + エピタキシャルショットキバリア形 東芝複合素子 SSM5H11TU ○ DC-DC コンバータ • • • 単位: mm 4 V 駆動です Nch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5H11TU SSM5H11TU PDF

    SSM5G02TU

    Abstract: No abstract text available
    Text: SSM5G02TU 東芝複合素子 シリコンPチャネルMOS形 U-MOSII + エピタキシャルショットキバリア形 SSM5G02TU ○ DC-DC コンバータ • • 単位: mm Pch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。


    Original     		SSM5G02TU SSM5G02TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter • • Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5G09TU PDF

    SSM5H01TU

    Abstract: marking kef
    Text: SSM5H01TU Silicon N Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter • · Unit: mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5H01TU SSM5H01TU marking kef PDF

    SSM5G02TU

    Abstract: TA7150
    Text: SSM5G02TU Silicon P Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter • • Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics


    Original     		SSM5G02TU SSM5G02TU TA7150 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET


    Original     		SSM5G09TU PDF

    SSM5H16TU

    Abstract: No abstract text available
    Text: SSM5H16TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications • 1.8-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings


    Original     		SSM5H16TU SSM5H16TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5G01TU Silicon P Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Planar Diode SSM5G01TU DC-DC Converter for DSCs and Camcorders • • Unit: mm Co-packaged Pch MOSFET and Schottky Diode. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) Characteristics


    Original     		SSM5G01TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM5H90TU Silicon N Channel MOS Type / Silicon Epitaxial Planer Diode SSM5H90TU High-Speed Switching Applications Unit: mm • Integrates an N-ch MOSFET and planer diodes into one package. • Low RDS ON and low VF Absolute Maximum Ratings (Ta = 25°C) for the MOSFET


    Original     		SSM5H90TU PDF