Untitled
Abstract: No abstract text available
Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V
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WT-2301
OT-23
OT-23
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MOSFET 2301
Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V
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WT-2301
OT-23
OT-23
MOSFET 2301
s01 sot-23 mosfet
MOSFET 2301 SOT-23
sot 23 S01
2301 SOT-23
2301 marking sot-23
WT2301
WT-2301
s1815
2301 marking
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Untitled
Abstract: No abstract text available
Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V
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WT-2301
OT-23
OT-23
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s2301
Abstract: No abstract text available
Text: S T S 2301 S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S -20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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OT-23
OT-23
s2301
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S2301
Abstract: No abstract text available
Text: S T S 2301 Green Product S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S -20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max
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OT-23
OT-23
S2301
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marking PA SOT23-6
Abstract: Marking f1 SOT23-6 T1 MARKING SOT23-6 sot23-6 package marking PA SOT23-6 MARKING pa NCS2302 MARKING T1 SOT23-6 NCS2303SN2T1 marking 515 sot23-6 sot23-6 pa
Text: NCS2300 Series Advance Information Low Power Comparators The NCS2300 Series is an ultra−low power comparator family. These devices consume only 11 mA of supply current. They operate at a wide voltage range of 1.7 V to 12 V. Additional features include no
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NCS2300
OT23-5
OT23-6
NCS2301/3
NCS2300/D
marking PA SOT23-6
Marking f1 SOT23-6
T1 MARKING SOT23-6
sot23-6 package marking PA
SOT23-6 MARKING pa
NCS2302
MARKING T1 SOT23-6
NCS2303SN2T1
marking 515 sot23-6
sot23-6 pa
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SSM2301
Abstract: No abstract text available
Text: PROCESS CHANGE NOTIFICATION PCN Number: 040101 Notice Type: Minor Customer Name: General - to all customers Customer Number: Customer Contact: Marketing Part Number: SSM2301 G N through SSM2306(G)N, SS431(G)N, SS432(G0N Notification dated: April 1, 2004 Change Effective date: Implemented January 1, 2004
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SSM2301
SSM2306
SS431
SS432
OT-23
OT-23-3
OT-23-6
-SOP-OP-015
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Untitled
Abstract: No abstract text available
Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes
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LTC2301/LTC2305
12-Bit
2301/LTC2305
12-pin
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Diode SOT-23 marking 15d
Abstract: LTC2309 LTC2305 5c sot-23 731D 2301 so8 LT1790A-4 LTC1790 23015 SOT-23 a6
Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes
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LTC2301/LTC2305
12-Bit
14ksps
LTC2301)
LTC2305)
12-Pin
LTC2451/LTC2453
Diode SOT-23 marking 15d
LTC2309
LTC2305
5c sot-23
731D
2301 so8
LT1790A-4
LTC1790
23015
SOT-23 a6
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marking code 10 lead msop package analog devices
Abstract: No abstract text available
Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes
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LTC2301/LTC2305
12-Bit
14ksps
LTC2301)
LTC2305)
12-Pin
LTC2451/LTC2453
marking code 10 lead msop package analog devices
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Untitled
Abstract: No abstract text available
Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes
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LTC2301/LTC2305
12-Bit
14ksps
LTC2301)
LTC2305)
12-Pin
LTC2451/LTC2453
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PDF
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LTC2305
Abstract: LTC2309 ltc2301
Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes
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LTC2301/LTC2305
12-Bit
14ksps
LTC2301)
LTC2305)
12-Pin
LTC2451/LTC2453
LTC2305
LTC2309
ltc2301
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adc 0808 pin configuration
Abstract: Diode SOT-23 marking 15d DAC 0808 pin configuration marking code 8 lead msop package analog devices dac 0808 LTC2305 LTC2309
Text: LTC2301/LTC2305 1-/2-Channel, 12-Bit ADCs with I2C Compatible Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n 12-Bit Resolution Low Power: 1.5mW at 1ksps, 35 W Sleep Mode 14ksps Throughput Rate Internal Reference Low Noise: SNR = 73.5dB Guaranteed No Missing Codes
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LTC2301/LTC2305
12-Bit
14ksps
LTC2301)
LTC2305)
12-Pin
20-Pin
adc 0808 pin configuration
Diode SOT-23 marking 15d
DAC 0808 pin configuration
marking code 8 lead msop package analog devices
dac 0808
LTC2305
LTC2309
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Mosfet
Abstract: SSF2301 2301 marking sot-23
Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2301
OT-23
reliabSSF2301
Mosfet
SSF2301
2301 marking sot-23
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NCS2302
Abstract: NCS2300 NCS2300SN1T1 NCS2300SN2T1 SC59 MOSFET 2302
Text: Back NCS2300 Series Advance Information High Voltage Comparators The NCS2300 Series are ultra–low power comparators. These devices consume only 11 mA of supply current. They operate at a wide voltage range of 1.7 V to 12 V. Additional features include no output
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NCS2300
NCS2301/3
r14525
NCS2300/D
NCS2302
NCS2300SN1T1
NCS2300SN2T1
SC59
MOSFET 2302
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MOSFET 2301 SOT-23
Abstract: 2301 marking sot-23 WTC2301
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
MOSFET 2301 SOT-23
2301 marking sot-23
WTC2301
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Untitled
Abstract: No abstract text available
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
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sot23 nc marking
Abstract: WTC2301
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
sot23 nc marking
WTC2301
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SOT-23
Abstract: MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23
Text: SMD MOSFET Formosa MS FMS2301 List List. 1 Package outline. 2 Features. 2
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FMS2301
120sec
260sec
30sec
DS-231129
SOT-23
MOSFET 2301 SOT-23
SMD WAG
FMS2301
MOSFET 2301
POWER MOSFET P1 smd marking code
2301 marking sot-23
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SSF2301
Abstract: 2301 marking sot-23
Text: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram
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SSF2301
SSF2301
2301 marking sot-23
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IRF6100
Abstract: 4.5v to 100v input regulator
Text: PD - 93930E IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V
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93930E
IRF6100
OT-23
EIA-481
EIA-541.
IRF6100
4.5v to 100v input regulator
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2301 SOT-23
Abstract: 4.5v to 100v input regulator
Text: PD - 93930D IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V
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93930D
IRF6100
OT-23
EIA-481
EIA-541.
2301 SOT-23
4.5v to 100v input regulator
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PDF
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EIA-541
Abstract: IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator
Text: PD - 93930C IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V
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93930C
IRF6100
OT-23
5M-1994.
EIA-541
IRF6100
MOSFET 2301 SOT-23
MOSFET 2301
Diode Mark sot23 4x
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon A F Transistors SM BTA 05 SM BTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) PinC¡onfigur ation 1 2 3 SM BTA 05
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OCR Scan
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68000-A3430
Q68000-A3428
OT-23
0235bG5
fiS35tiOS
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