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    23N100 Search Results

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    23N100 Price and Stock

    IXYS Corporation IXFE23N100

    MOSFET N-CH 1000V 21A SOT227B
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    DigiKey IXFE23N100 Box 1
    • 1 $29.25
    • 10 $22.227
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    IXYS Corporation IXFN23N100

    MOSFET N-CH 1000V 23A SOT-227B
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    DigiKey IXFN23N100 Tube 10
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    Mouser Electronics IXFN23N100
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    Torex Semiconductor LTD XP223N1001TR-G

    Power MOSFET, N Channel, 20 V, 1 A, 0.15 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: XP223N1001TR-G)
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    Avnet Americas XP223N1001TR-G Reel 12 Weeks 3,000
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    Newark XP223N1001TR-G Cut Tape 6,125 5
    • 1 $0.326
    • 10 $0.25
    • 100 $0.119
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    XP223N1001TR-G Reel 3,000
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    TME XP223N1001TR-G 10
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    Avnet Silica XP223N1001TR-G 9 Weeks 3,000
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    Torex Semiconductor LTD XP223N10013R-G

    Mosfet, N-Ch, 1A, 20V, Sot-323-3A Rohs Compliant: Yes |Torex XP223N10013R-G
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    Newark XP223N10013R-G Cut Tape 945 5
    • 1 $0.341
    • 10 $0.262
    • 100 $0.124
    • 1000 $0.069
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    Avnet Silica XP223N10013R-G 9 Weeks 3,000
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    TE Connectivity 15723N100

    Electromechanical Relay 6VAC 4.2Ohm 10A 3PDT (( 38.89mm 35.71mm 55.55mm)) Plain Case Industrial Relay
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 15723N100 39
    • 1 $56.76
    • 10 $52.66
    • 100 $52.66
    • 1000 $52.66
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    23N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N100

    Abstract: 23N10 125OC
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC

    24N100

    Abstract: "SOT-227 B" dimensions 125OC
    Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC

    24N100

    Abstract: 23N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 227TM

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die 0.39 Ω 0.43 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 227TM IXFN24N100 24N100:

    24N100

    Abstract: 23N10 IXFN24N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 227TM IXFN24N100 23N10