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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^b414S 0 0 17 0 0 3 031 « S r iG K PRELIMINARY KM23V4001 B G CMOS MASK ROM 4M-BH (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23V4001B is a fully static m ask program m able ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF b414S KM23V4001 23V4001B 288X8 150ns 32-pin, 600mil, KM23V4001B KM23V4001B)

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000