3q marking diode
Abstract: BAT54C BAT54A 33T4 BAT54S BAT54S dc BAT-54A
Text: 23A33T4 00G0722 n s BAT54A; C; S SCHOTTKY BARRIER DIODES BAT54A dual diodes, common anode BAT54C dual diodes, common cathode and BAT54S dual diodes, in series M arking PACKAGE O UTLIN E D ETAILS ALL D IM EN SION S IN mm BAT54A - 42 BAT54C - 43 BAT54S - 44
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23fl33T4
0G0722
BAT54A;
BAT54A
BAT54C
BAT54S
bat54a
3q marking diode
33T4
BAT54S dc
BAT-54A
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in750 diode
Abstract: 1N9148 IN750 1s1555 diode izk 1n758 zener 1n750 1S1555 in750 zener diode 1N751 izk 1N4150
Text: DO-35 4 = NOTÉS: 1. CATHODÉ IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DIM MIN MAX A 25,40 - B 3,03 4,44 C D 0,46 0,56 1,52 2,29 DIODES AMMO PACK DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified Type
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DO-35
DO-35
1N914
1N914A
1N914B
1N4148
1N4150
1N4151
1N4448
1N4531
in750 diode
1N9148
IN750
1s1555 diode
izk 1n758
zener 1n750
1S1555
in750 zener diode
1N751 izk
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CSB856
Abstract: No abstract text available
Text: CSB856 CSB856 PNP PLASTIC POWER TRANSISTOR Low frequency Power Amplifier. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L * DIM A B C E F G H J K L M N MIN 14.42 9,S3 3,56 MAX 16.51 10.67 4.83 0.90 1.15 1.40 3,75 3,68 2.29 2,79 2,54 3.43 0,56
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CSB856
CSB856
D001130
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Untitled
Abstract: No abstract text available
Text: BF457, BF458, BF459 BF457,458,459 NPN PLASTIC POWER TRANSISTORS Video O utput Stages of TV Sets, for A F Output Stages with a High Operating Voltage and as Driver Transistors in Horizontal Deflection Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR
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BF457,
BF458,
BF459
BF457
23A33T4
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2N4248
Abstract: 2N4142 transistor 2N4248 2N4143 CIL157 CIL157B CIL246 CIL258 CIL261 CIL223
Text: TO-106 EPOXY PACKAGE TRANSISTORS PNP Type vceo (V) Mir V EBO (V) Min CIL261 100 100 5.0 C1L251 80 80 2N42S4A 60 CtL241 V CBO No. (Ta=25°C, U nless Otherwise Specified) Electrical Characteristics Maximum Ratings (V) Min IcBO • m e hFE V CB lc (mA) & V CE
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O-106
CIL261
2N42S4A
CtL241
C1L242
OL245
CIL246
CIL211
CIL212
OL213
2N4248
2N4142
transistor 2N4248
2N4143
CIL157
CIL157B
CIL258
CIL223
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CMBT5400
Abstract: No abstract text available
Text: HIGH VOLTAGE TRANSISTOR P-N -P transistor M arking CMBT5400 = K? PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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CMBT5400
S3fl33T4
CMBT5400
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BSR16
Abstract: BSR15
Text: BSR15 BSR16 CD1L SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors Marking BSR15 = 17 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0 .1 4 0.09 0.48 0.38 L 'S 3 Pin configuration 0.70 0.50 1 1.4 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR
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BSR15
BSR16
BSR15
BSR16
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Untitled
Abstract: No abstract text available
Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS
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CMBT5401
23A33T4
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Untitled
Abstract: No abstract text available
Text: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN
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TIP41,
TIP41A,
TIP41B,
TIP41C
TIP42,
TIP42A,
TIP42B,
TIP42C
23fl33T4
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Untitled
Abstract: No abstract text available
Text: DO-35 Zener Diodes 500 mW E le c tric a l C h a ra c te ris tic s (A t Ta=25°C, U n le ss O th e rw is e S p e cifie d ) Type No. min V ZT r ZT at lZT at lZT nom max (V) 'zt r ZK 'z k a t !z k max max (Ohm) (mA) (Ohm) (mA) Temp. Coeff. of 1 Zener Voltage
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DO-35
RD10EB
RD10EB1
RD10EB2
RD10EB3
23A33T4
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23A33T4
Abstract: No abstract text available
Text: CSD1563A CSD1563A NPN PLASTIC POWER TRANSISTOR Complementary CSB1086A Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2 .25 TYP. E F 0.49 0 .75 G 4.5 TYP. L 15.7 TYP. M
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CSD1563A
CSB1086A
100ms
23A33T4
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BZX 850 5V1
Abstract: No abstract text available
Text: BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ 2.8 0.14 0.48 038 4* 3 2.6 2.4
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BZX84C
ZX84-C
BZX84-C7V
BZX84-C
BZX84-C27
23A33T4
BZX 850 5V1
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MJE340
Abstract: MJE340 b c e MJE350
Text: CDÎl MJE340 MJE340 NPN PLASTIC POWER TRANSISTOR Complementary MJE350 High Voltage General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM "V 7.4 7.8 10.8 B 10.5 C 2A 2.7 0.7 0.9 2 .2 5 TYP. E F 1 2 . 3- MAX. A 0.49 | 0 .7 5
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MJE340
MJE340
MJE350
23A33T4
MJE340 b c e
MJE350
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CSA1162
Abstract: No abstract text available
Text: 23633*14 DOOOab? 23M LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G —3F _3.0_ 3 Pin configuration 1 = BASE 2 = EM ITTER 3 = C O L LE C T O R 0.48
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CSA1162
csa1162y-3e
csa1162gr
CSA1162
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B963
Abstract: CBR745DT
Text: CBR745DT Single Chip Schottky Barrier Rectifier suited for SMPS and High Frequency DC to DC Converters I-£ h E V “fhr a iL i DIM A B C D E F G H J K L M N MIN 14.42 9,63 3,56 MAX 16.51 10.67 4.63 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0^6 12.70 14.73
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CBR745DT
GG011Ã
B963
CBR745DT
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Untitled
Abstract: No abstract text available
Text: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT3905
23fl33T4
D000fi20
23A33T4
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE TRANSISTOR P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S CM BT4125 = 5D ‘ A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S Collector-base voltage open emitter
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BT4125
23A33T4
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2N3550
Abstract: BC177 pnp transistor BCY79-9 2N2906A 2N2907A 2N3120 2N3496 2N3497 2N3505 2N3547
Text: TO-18 METAL-CAN PACKAGE TRANSISTORS PNP M axim um R atin gs Type No. 2N3497 2N3496 2N290SA VCBO (V) Min 120 80 60 VCEO (V) Min V EB0 (V) Min 120 5 60 60 5 5 Electrical Characteristics 'cBO (MA) M ax 0.100 0.100 0.010 VCB (V) hFE 60 60 5 0.010 90 50 50
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Ta-25Â
2N3497
2N3496
BCY72
BC179
BC179B
2N869
2N995
2N3550
BC177 pnp transistor
BCY79-9
2N2906A
2N2907A
2N3120
2N3505
2N3547
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL m PH 3568 TRANSISTOR MPtt TO-92 C8 E GENERAL PURPOSE SNITCHING TRANSISTORS ABSOLUTE MAXINtIN RATINGS TA = 25 deg 0 RATING SYMBOL VALUE UNIT .Collector Emitter Voltage VCEO 60 V Collector Base Voltage VC80 80 V fritte r Base Voltage VEBO
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IC40uA;
10uAi
00G03
7270194/PG/NK/V
23a33T4
DELHI-110
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Untitled
Abstract: No abstract text available
Text: CDIIL BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = QASE
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
23A33T4
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BT2907
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g CM BT2907 = 2B CM BT2907A = 2F 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S
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CMBT2907
CMBT2907A
BT2907
BT2907A
150mA;
BT2907
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Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00
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CMBT4403
23A33T4
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