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    Samsung Electronics Co. Ltd KM23V4100DG-12

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    23V4100D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM23V41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V41 512Kx8 /256Kx16) 100ns 120ns 23V4100D 40-DIP-600 23V4100DG 40-SO P-525

    23V4100DG

    Abstract: 40-SO
    Text: 23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V4100D 512Kx8 256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 23V4100DG 40-SO P-525 23V4100DG