Untitled
Abstract: No abstract text available
Text: M69AR048B 32 Mbit 2M x16 1.8V Asynchronous 1T/1C SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ ACCESS TIMES: 70ns, 80ns, 85ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ BYTE CONTROL: UB/LB ■ PROGRAMMABLE PARTIAL ARRAY
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M69AR048B
TFBGA48
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VDR 0047
Abstract: M68AW256D TFBGA48 TSOP44
Text: M68AW256D 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW256D
TSOP44
TFBGA48
VDR 0047
M68AW256D
TFBGA48
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ICCP16
Abstract: No abstract text available
Text: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY
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M69AR048B
TFBGA48
M69AR048BL70ZB8T
M69AR048B
ICCP16
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Untitled
Abstract: No abstract text available
Text: M68AW256D 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW256D
TSOP44
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M68AW256D 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT
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M68AW256D
TSOP44
TFBGA48
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VDR 0047
Abstract: TFBGA48 M68AW256D TSOP44
Text: M68AW256D 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW256D
TSOP44
TFBGA48
VDR 0047
TFBGA48
M68AW256D
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M69AR048B
Abstract: TFBGA48
Text: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB
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M69AR048B
TFBGA48
M69AR048B
TFBGA48
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M69AR048B
Abstract: TFBGA48
Text: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY
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M69AR048B
TFBGA48
M69AR048B
TFBGA48
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mppt c code
Abstract: mppt code MARKING IAF
Text: TH I S DRAW ING IS COP Y R I GH T UNPUBLI S H E D . RELEASED BY 20 TYCO ELECTRONICS CORPORATION POR ALL REVISIONS P U B L I C A T I ON RIGHTS RESERVED. LTR D E S C R I P T I ON Release to U p d a t e PN Reference Made RoHS 59 . PN : 15 1 3 2 5 9 Production
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OCR Scan
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24APR2003
2MAY2003
02NOV2005
02MAR2004
1MAR2000
mppt c code
mppt code
MARKING IAF
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