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FAG Bearings 23224-E1A-XL-K-M (ALTERNATE: 23224E1AKM) Radial Spherical Roller bearing \| FAG Bearings (Schaeffler) 23224-E1A-XL-K-M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	23224-E1A-XL-K-M (ALTERNATE: 23224E1AKM)	Bulk	2	3 Weeks	1	1 $959.16 10 $959.16 100 $959.16 1000 $959.16 10000 $959.16	Buy Now
FAG Bearings 23124-E1A-XL-M Spherical Roller Bearing, 120MM ID, 200MM OD, 62MM Width \| FAG Bearings (Schaeffler) 23124-E1A-XL-M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	23124-E1A-XL-M	Bulk		2 Weeks	1	1 $1000.53 10 $969.74 100 $969.74 1000 $969.74 10000 $969.74	Get Quote
FAG Bearings 23024-E1A-XL-M Spherical Roller Bearing, 120MM ID, 180MM OD, 46MM Width \| FAG Bearings (Schaeffler) 23024-E1A-XL-M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	23024-E1A-XL-M	Bulk		2 Weeks	1	1 $803.33 10 $803.33 100 $803.33 1000 $803.33 10000 $803.33	Get Quote
FAG Bearings 23024-E1A-XL-K-M Spherical Roller Bearing, 120MM ID, 180MM OD, 46MM Width \| FAG Bearings (Schaeffler) 23024-E1A-XL-K-M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	23024-E1A-XL-K-M	Bulk		2 Weeks	1	1 $803.32 10 $778.6 100 $778.6 1000 $778.6 10000 $778.6	Get Quote
FAG Bearings 22324-E1A-XL-K-M Spherical Roller Bearing, 120MM ID, 260MM OD, 86MM Width \| FAG Bearings (Schaeffler) 22324-E1A-XL-K-M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	22324-E1A-XL-K-M	Bulk		2 Weeks	1	1 $1834.3 10 $1777.86 100 $1777.86 1000 $1777.86 10000 $1777.86	Get Quote

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24E1A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC2670	PDF
2SC3113 Abstract: No abstract text available Text: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package	Original	2SC3113 2SC3113	PDF
2SC2458 GR Abstract: 2SC2458 2SA1048 Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)	Original	2SC2458 2SA1048 2SC2458 GR 2SA1048	PDF
2SC2458 Abstract: 2SC2458 GR 2sc2458l 2SA1048 Text: 2SC2458 L シリコンNPNエピタキシャル形 (PCT方式) 東芝トランジスタ 2SC2458(L) ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。	Original	2SC2458 2SA1048 2SC2458 GR 2sc2458l 2SA1048	PDF
2SC5765 Abstract: No abstract text available Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic	Original	2SC5765 2SC5765	PDF
2SC2710 Abstract: 2SA1150 Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2710 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	2SC2710 2SA1150 2SC2710 2SA1150	PDF
2SA1049 Abstract: 2SC2459 Text: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
RN1201 Abstract: RN1202 RN1203 RN1204 RN1205 RN1206 RN2201 Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design	Original	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206	PDF
2SA1048 Abstract: 2SC2458 2sa1048 transistor Text: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1048 2SC2458 2SA1048 2SC2458 2sa1048 transistor	PDF
2SA1049 Abstract: 2SC2459 transistor 2sc2459 Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)	Original	2SC2459 2SA1049. 2SA1049 2SC2459 transistor 2sc2459	PDF
2SC5720 Abstract: No abstract text available Text: 2SC5720 東芝トランジスタシリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)	Original	2SC5720 2SC5720	PDF
RN1210 Abstract: RN2210 RN2211 Text: RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2210,RN2211 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process	Original	RN2210 RN2211 RN1210, RN1210 RN2211	PDF
2SA1150 Abstract: 2SC2710 Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1150 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	2SA1150 2SC2710 2SA1150 2SC2710	PDF
RN1202 Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204 Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design	Original	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206 equivalent transistor 1204	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)	OCR Scan	2SC3327	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC3113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C3 1 1 3 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4.2MAX. hpE = 600~3600 VCEO = 50V	OCR Scan	2SC3113 150mA	PDF
Untitled Abstract: No abstract text available Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.	OCR Scan	2SA1297 2SC3267. 961001EAA2'	PDF
transistor 2sc2459 Abstract: 2SC2459 Text: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS \| High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)	OCR Scan	2SC2459 2SA1049. transistor 2sc2459 2SC2459	PDF
0723 Abstract: l1998 Text: T O S H IB A RN1210,RN1211 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1210, RN1211 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1210 RN1211 RN1210, RN2210, RN2211 0723 l1998	PDF
RN2223 Abstract: ko iq Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)	OCR Scan	RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA RN1207-RN1209 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1207, RN1208, RN1209 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1207-RN1209 RN1207, RN1208, RN1209 RN2207 RN2209 RN2208 RN2209 RN1207	PDF
1223 equivalent Abstract: No abstract text available Text: RN1221,1222,1223 RN1224,1225 RN1226,1227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mni AND DRIVER CIRCUIT APPLICATIONS. 4.2MAX. . High Current Type Ic(MAX =800mA) . With Built-in Baias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts Manufacturing Process	OCR Scan	RN1221 RN1224 RN1226 800mA) RN2221-2227 RN1222 RN1223 RN1225 1223 equivalent	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA RN2207-RN2209 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2207, RN2208, RN2209 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN2207-RN2209 RN2207, RN2208, RN2209 RN1207 RN2207 RN2208 RN2209	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors	OCR Scan	RN1201 RN1201, RN1202, RN1203, RN1205, RN1206 RN2201 RN1202 RN1203	PDF

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24E1A Search Results

24E1A Price and Stock

FAG Bearings 23224-E1A-XL-K-M (ALTERNATE: 23224E1AKM)

FAG Bearings 23124-E1A-XL-M

FAG Bearings 23024-E1A-XL-M

FAG Bearings 23024-E1A-XL-K-M

FAG Bearings 22324-E1A-XL-K-M

24E1A Datasheets Context Search

Untitled

2SC3113

2SC2458 GR

2SC2458

2SC5765

2SC2710

2SA1049

RN1201

2SA1048

2SA1049

2SC5720

RN1210

2SA1150

RN1202

Untitled

Untitled

Untitled

transistor 2sc2459

0723

RN2223

Untitled

1223 equivalent

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