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    FAG Bearings 23224-E1A-XL-K-M (ALTERNATE: 23224E1AKM)

    Radial Spherical Roller bearing | FAG Bearings (Schaeffler) 23224-E1A-XL-K-M
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    RS 23224-E1A-XL-K-M (ALTERNATE: 23224E1AKM) Bulk 2 3 Weeks 1
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    FAG Bearings 23224-E1A-XL-M

    Spherical Roller Bearing, 120MM ID, 215MM OD, 76MM Width | FAG Bearings (Schaeffler) 23224-E1A-XL-M
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    FAG Bearings 23024-E1A-XL-M

    Spherical Roller Bearing, 120MM ID, 180MM OD, 46MM Width | FAG Bearings (Schaeffler) 23024-E1A-XL-M
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    FAG Bearings 23124-E1A-XL-M

    Spherical Roller Bearing, 120MM ID, 200MM OD, 62MM Width | FAG Bearings (Schaeffler) 23124-E1A-XL-M
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    RS 23124-E1A-XL-M Bulk 2 Weeks 1
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    FAG Bearings 22224-E1A-XL-K-M

    Spherical Roller Bearing, 120MM ID, 215MM OD, 58MM W | FAG Bearings (Schaeffler) 22224-E1A-XL-K-M
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    RS 22224-E1A-XL-K-M Bulk 1
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    24E1A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2670

    2SC3113

    Abstract: No abstract text available
    Text: 2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA max • Small package


    Original     		PDF 2SC3113 2SC3113

    2SC2458 GR

    Abstract: 2SC2458 2SA1048
    Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC2458 2SA1048 2SC2458 GR 2SA1048

    2SC2458

    Abstract: 2SC2458 GR 2sc2458l 2SA1048
    Text: 2SC2458 L シリコンNPNエピタキシャル形 (PCT方式) 東芝トランジスタ 2SC2458(L) ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。


    Original     		PDF 2SC2458 2SA1048 2SC2458 GR 2sc2458l 2SA1048

    2SC5765

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5765 2SC5765

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1049

    Abstract: 2SC2459
    Text: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


    Original     		PDF 2SA1049 2SC2459. 2SA1049 2SC2459

    RN1201

    Abstract: RN1202 RN1203 RN1204 RN1205 RN1206 RN2201
    Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design


    Original     		PDF RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206

    2SA1048

    Abstract: 2SC2458 2sa1048 transistor
    Text: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


    Original     		PDF 2SA1048 2SC2458 2SA1048 2SC2458 2sa1048 transistor

    2SA1049

    Abstract: 2SC2459 transistor 2sc2459
    Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC2459 2SA1049. 2SA1049 2SC2459 transistor 2sc2459

    2SC5720

    Abstract: No abstract text available
    Text: 2SC5720 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5720 2SC5720

    RN1210

    Abstract: RN2210 RN2211
    Text: RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2210,RN2211 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2210 RN2211 RN1210, RN1210 RN2211

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SA1150 2SC2710 2SA1150 2SC2710

    RN1202

    Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204
    Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design


    Original     		PDF RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206 equivalent transistor 1204

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)


    OCR Scan     		PDF 2SC3327

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC3113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C3 1 1 3 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4.2MAX. hpE = 600~3600 VCEO = 50V


    OCR Scan     		PDF 2SC3113 150mA

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297 2SC3267. 961001EAA2'

    transistor 2sc2459

    Abstract: 2SC2459
    Text: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS | High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC2459 2SA1049. transistor 2sc2459 2SC2459

    0723

    Abstract: l1998
    Text: T O S H IB A RN1210,RN1211 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1210, RN1211 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN1210 RN1211 RN1210, RN2210, RN2211 0723 l1998

    RN2223

    Abstract: ko iq
    Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)


    OCR Scan     		PDF RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA RN1207-RN1209 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1207, RN1208, RN1209 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN1207-RN1209 RN1207, RN1208, RN1209 RN2207 RN2209 RN2208 RN2209 RN1207

    1223 equivalent

    Abstract: No abstract text available
    Text: RN1221,1222,1223 RN1224,1225 RN1226,1227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mni AND DRIVER CIRCUIT APPLICATIONS. 4.2MAX. . High Current Type Ic(MAX =800mA) . With Built-in Baias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts Manufacturing Process


    OCR Scan     		PDF RN1221 RN1224 RN1226 800mA) RN2221-2227 RN1222 RN1223 RN1225 1223 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA RN2207-RN2209 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2207, RN2208, RN2209 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN2207-RN2209 RN2207, RN2208, RN2209 RN1207 RN2207 RN2208 RN2209

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors


    OCR Scan     		PDF RN1201 RN1201, RN1202, RN1203, RN1205, RN1206 RN2201 RN1202 RN1203