Contextual Info: TECHNICAL DATA SHEET Mini UHF 24K101-802A1 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface N/A Documents Assembly instruction 24 A1 Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body

24K101-106A1

Abstract: rosenberger assembly mini 11W150-206
Contextual Info: TECHNICAL DATA SHEET Mini UHF 24K101-106A1 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface N/A Documents Assembly instruction 24 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body

Contextual Info: TECHNICAL DATA SHEET Mini UHF 24K101-106A1 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface N/A Documents Assembly instruction 24 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body

11W150-402

Abstract: assembly instruction Crimp 02 11W150-000
Contextual Info: TECHNICAL DATA SHEET Mini UHF 24K101-802A1 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface N/A Documents Assembly instruction 24 A1 Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body

M5L2716K

Abstract: 2716K M5L2716K-65 intel 2716
Contextual Info: MITSUBISHI LSIs M5L 2716 K, K-65 1 6 3 8 4 -B IT 2 0 4 8 -W 0 R D BY 8 -B IT ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) These are ultraviolet-light erasable and electrically re­ programmable 16 3 8 4 -b it (20 4 8 -w o rd by 8-bit) EPROMs.

resistor 3k8

Contextual Info: Semi-Precision Power Resistors Semi-Precision Power Wirewound Resistor Wirewound Resistor Semi-Precision Power WelwynMake Components Possible Welwyn Components AS Series Wirewound Resistor • 0.25 to 10 watts AS Series • Tolerance down to ±0.5% • 0.25

2716 IC

Abstract: 2716 JL rom 2716 M5L2716K M5L2716K-65 intel 2716 2716 ROM pin diagram of ic 2716 msl 2716 0326S
Contextual Info: MITSUBISHI L S Is M5L 2716 K, K-65 1 6 3 8 4 - B IT 2 0 4 8 -W 0 R D B Y 8 -B IT E R A S A B L E AND E L E C T R IC A L L Y R EP R O G R A M M A B LE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) These are u ltra v io le t-lig h t erasable and e lectrically re­

24S10

Abstract: M58730 M5L2708K 2708s M5L2708S 12V ENERGY LIGHT CIRCUIT DIAGRAM 11L2
Contextual Info: M IT S U B IS H I LSIs M5L 2708K, S; K-65, S-65 8 1 9 2 - B IT 1 0 2 4 -W O R D BY 8 -B IT ERASABLE AND ELECTRICALLY REPROGRAM M ABLE ROM DESCRIPTION This is a fa m ily o f FAMOS (floating-gate avalancheinjection MOS) u ltra vio le t-lig h t erasable and electrically

24S10

Abstract: 2708K M5L2708K 15-WS M5L2708S
Contextual Info: MITSUBISHI LSIs M 5L 2 7 0 8 K , S; K -6 5 , S -6 5 8 1 9 2 -B IT 1 0 2 4 -W 0 R D BY 8 -B IT ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION This is a fa m ily o f FAMOS (floating-gate avalancheinjection MOS) u ltra vio le t-lig h t erasable and electrically

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated