SSP7404NA
Abstract: MosFET
Text: SSP7404NA 35A, 30V, RDS ON 2.8 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.
|
Original
|
PDF
|
SSP7404NA
27BSC
30-Dec-2013
SSP7404NA
MosFET
|
2SK3262-01MR
Abstract: No abstract text available
Text: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3262-01MR
O-220F15
2SK3262-01MR
|
2sk3262
Abstract: 2SK3262-01MR MOSFET 200v 20A n.channel
Text: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3262-01MR
O-220F15
2sk3262
2SK3262-01MR
MOSFET 200v 20A n.channel
|
a1290
Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290
Text: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
2SK4204LS
ENA1290
PW10s,
A1290-5/5
a1290
K4204
2SK4204
2SK42
2SK4204LS
ENA1290
|
60T03GP
Abstract: 60t03gs 60T03 AP60T03GP 60T0 60t03g ap60t03 THV100
Text: AP60T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 12mΩ ID G 45A S Description Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP60T03GS/P
O-263
AP60T03GP)
O-220
O-220
60T03GP
60T03GP
60t03gs
60T03
AP60T03GP
60T0
60t03g
ap60t03
THV100
|
Untitled
Abstract: No abstract text available
Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3218-01
O-220AB
|
IRF9310
Abstract: IRF9310TRPBF IRF9310PBF JESD47F IRF9310TR IRF p-CHANNEL MOSFET IRF 630 Datasheet ABD 630
Text: PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6 ' 4.6 mΩ 6 ' 6 ' * ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits
|
Original
|
PDF
|
7437A
IRF9310PbF
IRF9310TRPbF
IRF9310
IRF9310TRPBF
IRF9310PBF
JESD47F
IRF9310TR
IRF p-CHANNEL
MOSFET IRF 630 Datasheet
ABD 630
|
Untitled
Abstract: No abstract text available
Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3219-01MR
O-220F15
|
Untitled
Abstract: No abstract text available
Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3219-01MR
O-220F15
|
Untitled
Abstract: No abstract text available
Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3218-01
O-220AB
|
2SK3218-01
Abstract: 2SK3219-01MR
Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
|
Original
|
PDF
|
2SK3219-01MR
O-220F15
2SK3218-01
2SK3219-01MR
|
Untitled
Abstract: No abstract text available
Text: PD - 97437 IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6 ' 4.6 mΩ 6 ' 6 ' * ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits
|
Original
|
PDF
|
IRF9310PbF
IRF9310TRPbF
J-STD-020Dâ
|
spartan 3a
Abstract: SPARTAN-3 XC3S400 24v 12v 20A regulator circuit diagram power supply SAMSUNG MONITOR str panasonic 614 battery 10nF 50V X7R samsung 7 pin str for 24v 3 amp to 220 package Circuit diagram of Regulated Power supply 6V 5A EL7566 ISL6401
Text: HIGH PERFORMANCE ANALOG Power Management Application Guide for Xilinx FPGAs Using Switchers to Power Xilinx FPGAs and DDR Memory Increased gate counts and higher clock speeds in programmable logic ICs have resulted in higher current requirements while smaller device geometries are driving lower core supply voltages. Both
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: AP60T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 12mΩ ID G 45A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
|
Original
|
PDF
|
AP60T03AS/P
O-263
AP60T03AP)
O-220
Un100
100us
100ms
|
|
|
ap60t03
Abstract: AP60T03AH AP60T03AJ
Text: AP60T03AH/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 12mΩ ID G 45A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
|
Original
|
PDF
|
AP60T03AH/J
O-252
AP60T03AJ)
O-251
100ms
ap60t03
AP60T03AH
AP60T03AJ
|
AN-994
Abstract: IRFR120 IRFU120 IRL3303 IRLR3303 IRLU3303 U120 12v 10A regulator Rectifier Diode 20A inductor footprint
Text: PD- 95086A IRLR/U3303PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3303 Straight Lead (IRLU3303) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω
|
Original
|
PDF
|
5086A
IRLR/U3303PbF
IRLR3303)
IRLU3303)
surf16
EIA-481
EIA-541.
EIA-481.
AN-994
IRFR120
IRFU120
IRL3303
IRLR3303
IRLU3303
U120
12v 10A regulator
Rectifier Diode 20A
inductor footprint
|
UTT40N03
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT40N03 Power MOSFET 40A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTT40N03 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
|
Original
|
PDF
|
UTT40N03
UTT40N03
O-252
UTT40N03L-TN3-R
UTT40N03G-TN3-R
UTT40N03L-TN3-T
UTT40N03G-TN3-T
QW-R502-689
|
CVG30
Abstract: No abstract text available
Text: AP1203GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Fast Switching Performance 30V RDS ON 12mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 45A
|
Original
|
PDF
|
AP1203GMT-HF
Drain-Sour00
100us
100ms
CVG30
|
60n03
Abstract: 60N03 mosfet 60N03 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET 60N03 AF60N03 510 MOSFET 60N03 to TO-252 N-channel MOSFET IDA45
Text: AF60N03 N-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching,
|
Original
|
PDF
|
AF60N03
O-252
O-252
60N03
60n03
60N03 mosfet
60N03 m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
MOSFET 60N03
AF60N03
510 MOSFET
60N03 to
TO-252 N-channel MOSFET
IDA45
|
AP40N03GP
Abstract: 3100T
Text: AP40N03GP Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS ON 17mΩ ▼ Fast Switching ID G D S 40A TO-220 Description D The Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP40N03GP
O-220
O-220
AP40N03GP
3100T
|
SSM60T03GP
Abstract: No abstract text available
Text: SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free, RoHS compliant. BV DSS 30V R DS ON 12mΩ ID 45A S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is
|
Original
|
PDF
|
SSM60T03GP
SSM60T03GS
O-263
O-220,
|
AP9408AGH
Abstract: marking 30A
Text: AP9408AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 10mΩ ID G 53A S Description Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP9408AGH
O-252
O-252
9408AGH
AP9408AGH
marking 30A
|
Untitled
Abstract: No abstract text available
Text: AP1203GMT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Fast Switching Performance BVDSS 30V RDS ON 12mΩ ID G 45A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with
|
Original
|
PDF
|
AP1203GMT
1203GMT
|
GI60T03
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GI60T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 12m 45A Description The GI60T03 provide the designer with the best combination of fast switching, ruggedized device design, low
|
Original
|
PDF
|
GI60T
GI60T03
O-251)
O-251
GI60T03
|
