RUTTONSHA all diodes
Abstract: HMR120 RUTTONSHA RUTTONSHA 40 hm RUTTONSHA 40 hm 160 RUTTONSHA 25 hmr 40 70 HM ruttonsha 40 hmr 120 40 hmr 160 RUTTONSHA 25 hmr
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 25/40 Ampere Silicon Power Diodes FEATURES Y All diffused series. Y Available in normal & reverse polarity. Y Device conforms to IS 3700 III & IS 4400 (III). Y Device outline conforms to IS 5000 (Do. 5).
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Abstract: No abstract text available
Text: S O L I D S T A T E IN C 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SILICON RECTIFIERS 40 Ampere Silicon Power Diodes FEATURES ❖ ❖ ❖ ❖ DO-5 All Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic
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40HF/HFR
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MEXICO LF 2A 250V 313 FUSE
Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
Text: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and
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EC102-A
MEXICO LF 2A 250V 313 FUSE
MEXICO LF 1A 250V 313 FUSE
MEXICO LF 15A 250V 326 FUSE
MEXICO LF 20A 250V 326 FUSE
MEXICO LF 5A 250V 314 FUSE
mosfet 5kw high power rf
MEXICO LF 20A 250V 314 FUSE
MEXICO LF 5A 250V 314 FUSE slo blo
MEXICO LF 2A 250V 312 FUSE
equivalent circuit of power transformer 11kv
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international rectifier GTO
Abstract: SCR 700v 30a LA50-P L15S1000 SCR 1000V 1000A LA055URD33TTI2250 LA100P DC Fuse 1000V 800A LA70QS80-22F LA60Q15-2
Text: Special Purpose Fuses Semiconductor Fuses 150 – 1300 VAC • Very Fast Acting • 1 – 6000 Amperes Semiconductor Fuses Littelfuse Semiconductor fuses are very fast acting fuses designed specifically for the protection of diodes, thyristors, triacs, and other
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LA130URD70TTI
LA120URD70TTI
LA130URD71TTI
LA120URD71TTI
LA130URD72TTI
LA120URD72TTI
LA130URD73TTI
LA120URD73TTI
LA110URD73TTI
LA090URD73TTI
international rectifier GTO
SCR 700v 30a
LA50-P
L15S1000
SCR 1000V 1000A
LA055URD33TTI2250
LA100P
DC Fuse 1000V 800A
LA70QS80-22F
LA60Q15-2
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1N4150
Abstract: 25 Ampere Silicon Power Diodes 1N4148M 1n914a-1
Text: HITANO ENTERPRISE CORP. 1N914 THRU 1N4148~1N4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING VOLTAGE RANGE -50 to 100 Volts DIODES CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low power loss, high efficiency * Low leakage
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1N914
1N4148
1N4454
DO-34
DO-35
MIL-STD-202E,
1N4150
1N4151
25 Ampere Silicon Power Diodes
1N4148M
1n914a-1
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1N4148 DO-34
Abstract: 100HZ 100MHZ 1N4148
Text: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF DO-34 GLASS 1.143 (29.03)
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1N4148
500mW
DO-34
DO-35
1N4148 DO-34
100HZ
100MHZ
1N4148
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Untitled
Abstract: No abstract text available
Text: FMKA140 FAIRCHILD s e m i c o n d u c t o r Tm DISCREi ECPH°NW0EL ^ E DSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high
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FMKA140
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CNY47A
Abstract: CNY47 CNY47/47A
Text: European “Pro Electron’VRegistered Types _ CNY47, CNY47A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he CNY47 and CNY47A are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a
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CNY47,
CNY47A
CNY47
CNY47A
CNY47/47A
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Untitled
Abstract: No abstract text available
Text: PA.RCH.LD s e m ic o n d u c t o r Tm MBRS320 SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
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1bl3
Abstract: No abstract text available
Text: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high
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MBRS130L
1bl3
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Untitled
Abstract: No abstract text available
Text: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features DO-34 GLASS Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF 0.079(2.0)
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1N4148
DO-34
500mW
DO-35
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MBRS340
Abstract: No abstract text available
Text: MBRS340 FAIRCHILD M IC D N D U C T Q R n SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
MBRS340
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diode 1bl3
Abstract: 1BL3 on 1bl3 G3060 Mark 1BL3 MBRS130L
Text: MBRS130L FAIRCH.LD MICDNDUCTQR T m DISCR^CPH ro“ SIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS130L
diode 1bl3
1BL3
on 1bl3
G3060
Mark 1BL3
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Untitled
Abstract: No abstract text available
Text: ÎV /ÎD D C 1 4 A SE M IC O N D U C T O R DISCRETE POWER AND SIGNAL t e c h n o l o g ie s M d KM 4U FA IR C H IL D SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high
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MBRS140
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UNION CARBIDE
Abstract: No abstract text available
Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS Crss = 0.75pF 1 ID100 ID101 TO-78 TOP VIEW
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ID100
ID101
ID100
300mW
25-year-old,
UNION CARBIDE
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A140
Abstract: FMKA140
Text: FMKA140 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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FMKA140
A140
FMKA140
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B140
Abstract: MBRS140
Text: MBRS140 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS140
B140
MBRS140
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CNY32
Abstract: 5300V
Text: G E SOLID STATE 01 DE I 3S7S0fll 00nfl3fc. 1 I Optoelectronic Specifications - S 3 Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State CNY32 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a low-cost plastic
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CNY32
CNY32
5300V
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FAIRCHILD MBRS340
Abstract: MBRS340 diode b34 Mark B34
Text: MBRS340 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
FAIRCHILD MBRS340
MBRS340
diode b34
Mark B34
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BAV19
Abstract: High Speed Switching Diodes
Text: HITANO ENTERPRISE CORP. BAV19 THRU BAV21 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE - 100 to 200 Volts CURRENT - 0.2 Ampere FEATURES * * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage Low forward voltage
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BAV19
BAV21
DO-34
DO-35
MIL-STD-202E,
DO-34"
BAV19M)
High Speed Switching Diodes
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id100
Abstract: No abstract text available
Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS
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ID100
ID101
ID100
300mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: FMKA140 FAIRCHILD S E M IC O N D U C T O R tm DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high
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FMKA140
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R tm MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
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MBRS340
Abstract: No abstract text available
Text: FAIRCHILD S E M I C O N D U C T O R tm MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
MBRS340
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