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    250 3B7 Search Results

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    Murata Manufacturing Co Ltd LDC312G2503B-723

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    DigiKey LDC312G2503B-723 Reel 3,000
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    Avnet Americas LDC312G2503B-723 Reel 3,000
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    Ferroxcube International Holding BV RM8PA250-3B7

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    Bristol Electronics RM8PA250-3B7 55
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    250 3B7 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Philips Components Material grade specification 3B7 3B7 SPECIFICATIONS SYMBOL µi B tanδ/µi DF αF ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 100 kHz; 0.1 mT 25 °C; 500 kHz; 0.1 mT 25 °C; 1 MHz;


    Original     		PDF MBW057 MBW020 100oC MBW058 MBW077

    that 2159

    Abstract: 2B252 3B502 that+2159 2B103
    Text: POWER INDUCTORS - THRU HOLE B High Current Filter Inductors PART NUMBER 1B252 1B502 1B103 1B253 1B503 1B753 1B104 2B252 2B392 2B502 2B103 2B253 3B501 3B751 3B102 3B252 3B502 3B752 3B103 INDUCTANCE @ 1kHz ±10% 25 µH 50 µH 100 µH 250 µH 500 µH 750 µH


    Original     		PDF 1B252 1B502 1B103 1B253 1B503 1B753 1B104 2B252 2B392 2B502 that 2159 3B502 that+2159 2B103

    that 2159

    Abstract: No abstract text available
    Text: POWER INDUCTORS - THRU HOLE POWER INDUCTORS - LEADED BLF PART NUMBER 1B252LF 1B502LF 1B103LF 1B253LF 1B503LF 1B753LF 1B104LF 2B252LF 2B392LF 2B502LF 2B103LF 2B253LF 3B501LF 3B751LF 3B102LF 3B252LF 3B502LF 3B752LF 3B103LF RoHS High Current Filter Inductors


    Original     		PDF 1B252LF 1B502LF 1B103LF 1B253LF 1B503LF 1B753LF 1B104LF 2B252LF 2B392LF 2B502LF that 2159

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY n Advanced Micro Devices AmCOOIAFLKA 1 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current


    OCR Scan     		PDF 68-pin 10mand 7120A-21

    2n6520

    Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO


    OCR Scan     		PDF 2N6517 2N652Ö 2N6515 2N6519 2N6520 2N6515, 2N6516, 2N6519, 2N6517 MOTOROLA transistors aio 20

    Untitled

    Abstract: No abstract text available
    Text: Inductors AXIAL LEAD TYPE, TP SERIES [RCJ APPROVED] TP0206 TYPE 005±0.05 [.020±.002] am , ° 27 [1.063] min. 27 [1.063] min. 6.35 ±0.25 [.250 ±.010] 02.42 ±0.25 [.095 ±.010] Dimensions in mm [inches] CHARACTERISTICS Operating temperature range -5 5 to +125°C[ — 67to +257°F]


    OCR Scan     		PDF TP0206 -67tO TP0206-R10D* TP0206-R12C TP0206-R15D TP0206-R18D TP0206-R22D TP0206-R27D TP020619-432J TP0619-472J

    Untitled

    Abstract: No abstract text available
    Text: IRFS244A A dvanced Power MOSEET FEATURES BVDSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.28 Q. lD = 10.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan     		PDF IRFS244A 0G3b333 QG3b33M G03b335

    SC250D3

    Abstract: 2sc2501
    Text: MOTOROLA SC ÍD I OD ES /O PTO} 77 Öl D e | b3b72SS □ □ 7 cia37 7 J V ' à S - ' / S ' SC 250 S C 2 5 0 3 SC 251 T riacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls,


    OCR Scan     		PDF b3b72SS MT20- SC250D3 2sc2501

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . ARS/AR25 SERIES HIGH CURRENT PLASTIC SILICON RECTIFIER FEATURES: VOLT AGE RANGE 5 0 to 1 0 0 0 Volts Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low Leakage at elevated tempearture 250 ua at 100°C


    OCR Scan     		PDF ARS/AR25 MIL-STD-202,

    IC 4016 PIN DIAGRAM

    Abstract: MC4016 internal circuit diagram ic ct 4017 pin diagram of ic 4016 4017 equivalent MC4016 lm 4017 ft 4017 pin diagram 4019 ALCO BCD
    Text: ^M C4316 ^MC4317 XMC43Ì8 MC4319 MOTOROLA PROGRAMMABLE MODULO-N COUNTERS L SU FFIX C E R A M IC PA C K A G E C A S E 62 0 I F SU FFIX C E R A M IC P A C K A G E C A S E 650 All Types: Total Power Dissipation = Input Loading Factor: 250 mW typ/pkg Clock, PE = 2


    OCR Scan     		PDF MC4316 MC4016 MC4319 MC4019 MC4316/4016 MC4318/4018 MC4317/4017 MC4319/4019 IC 4016 PIN DIAGRAM MC4016 internal circuit diagram ic ct 4017 pin diagram of ic 4016 4017 equivalent MC4016 lm 4017 ft 4017 pin diagram 4019 ALCO BCD

    25CC

    Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
    Text: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd


    OCR Scan     		PDF

    triac driver opto moc3021

    Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
    Text: MO TO R O L A SC -CDIODES/OPTO} 1SE D I L,3b755S D D Û D 0 D 1 Optoisolators T M \ - % S | 3 Case 730A-02 A n optoisolator con sists of a gallium arsenide infrared em itting diode, IRED, optically coupled to a m onolithic silic o n p h o to -d e te cto r in a lig h t -s h ie ld in g p ack age .


    OCR Scan     		PDF 3b755S 30A-02 OJJ20 730B-02 730C-02 730D-Q2 triac driver opto moc3021 MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr

    rm 6203

    Abstract: wabash relay ci rm 6203 ta 6203 6203 power switch IC 6201 coto 6202 ic 6206 coto 6204 6205
    Text: KEARNEV-NATL/COTO U A BA S H blE » • 5tnb74ö 00004^0 3b7 «COTO COTO WABASH A Kearney National 6200 Company Series High Voltage Solid State Relays The COTO WABASH 6200 Series FEATURES High Voltage Solid State Relays offer the designer an alternative to electromechanical


    OCR Scan     		PDF 5tnb74ö rm 6203 wabash relay ci rm 6203 ta 6203 6203 power switch IC 6201 coto 6202 ic 6206 coto 6204 6205

    Untitled

    Abstract: No abstract text available
    Text: MOTORO LA SC O I O D E S / O P T O } 6367255 MOTOROLA ' SC 34 DE | L.3b72S5 G03Ö214 □ | DIODES/OPTO 34 c 38214 D 7 * -2 - ? - / 7 . MICRO-T (continued) MMT2484 — NPN LOW CURRENT AMPLIFIER TRANSISTOR • designed for low-noise amplifier. Pin 1. Base


    OCR Scan     		PDF 3b72S5 MMT2484

    cd4611

    Abstract: CMOS BCD-TO-7-SEGMENT LATCH DECODER DRIVERS CD4611B 5082-7404 C04555
    Text: G E SOLID STATE Dl i>Ë| 3B7S0ai Q0133k3 T 3Ö75081 G E SOLID STATE 01E 13363 _ D T-S/-/7 CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-Volt Rating B a t e The CD4511B types are BCD-to-7-segment latch decoder drivers constructed with


    OCR Scan     		PDF Q0133k3 CD4511B 20-Volt cd4611 CMOS BCD-TO-7-SEGMENT LATCH DECODER DRIVERS CD4611B 5082-7404 C04555

    LTD524P

    Abstract: LTD-524P 524P LTD-524G LTD-524 MI-33
    Text: •;.n JLITE-ON 31E INC X ,_ LST1[@] fl D El 5S3L.3b7 0G02407 h EJLTN LTD-524 SERIES 0.43" DUAL D IG IT NUMERIC D ISPLA YS FEA TU RES • .43 INCH 11.0mm D IG IT H EIG H T. • CONTINUOUS UN IFO RM SEGM EN TS. • CHOICE OF F IV E B R IG H T C O LO R S -R ED /B R IG H T


    OCR Scan     		PDF 553ta3b7 00Q2MQ? LTD-524 553b3b7 D0201AD LTD524P LTD-524P 524P LTD-524G MI-33

    10549/BFAJC

    Abstract: No abstract text available
    Text: MOTOROLA M M SC íílEPIORY/ASI bSE D • b 3b72S l G O flW ñ T33 10549 O T O R O L A 1024-Bit Programmable Read Only Memory (PROM) ELECTRICALLY TESTED PER: MPG10549 This device is a 256-word x 4-bit field programmable read only memory (PROM). Prior to programming, all stored bit are at logic 1 (high) levels. The logic


    OCR Scan     		PDF 3b72S 10549/BXAJC 1024-Bit MPG10549 256-word 10549/BFAJC

    Untitled

    Abstract: No abstract text available
    Text: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost


    OCR Scan     		PDF AN415A)

    2N6428

    Abstract: No abstract text available
    Text: MOTORCLA SC XSTRS/R 12E D I F fe,3b7254 QOaSf lE] , M A X I M U M R A T IN G S Sym bol V a lu e C otle c tor-E m itte r V o ltag e R a ting VCEO 50 U n it Vdc Collector-B ase V o lta g e VCBO 60 V dc E m itter-B ase V o ltag e Ve b o 6 .0 V dc C ollec to r C u rre n t — C ontin uous


    OCR Scan     		PDF 3b7254 2N6428

    MTH15N20

    Abstract: MTM15N20 sc 3198 transistor AN569 c 3198 transistor
    Text: M O T O R O L A SC X S T R S / R F bflE D • fc.3b7ESH GDIflSfifl b7S ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES


    OCR Scan     		PDF b3b725H MTH15N20 MTM15N20 sc 3198 transistor AN569 c 3198 transistor

    marking 68g

    Abstract: 25CC BCW65A BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G
    Text: r 6 3 6 7 2 5 4 MOTOROLA SC DE I t,3b75S 4 D D f l n S l Tb M O T O R O L A SC Î X S T R S / R F> 96D 8 1 9 5 1 , _ CXSTRS/.R F Rating Sym bol Value VcEO VCBO V eb o 'c 32 60 5.0 800 mAdc Sym bol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/mW pd 300 mW


    OCR Scan     		PDF b3b75S4 BCX17 BCX18 marking 68g 25CC BCW65A BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G

    T1P49

    Abstract: T1P50 T1P-50 motorola dice
    Text: MOTOROLA SC ÎDIODE S/ OPTOÏ 6367255 MOTOROLA T m SC D eT | t>3b7S5S □□37'ibfl 1 D IO D ES/O PTO 3^ c 37968 D 7~ 33"Oi SILICON POWER TRANSISTOR DICE (continued) TIPC47 DIE NO. — NPN LINE SOURCE — PL500.E572 This die provides performance equal to or better than that of


    OCR Scan     		PDF PL500 T1P48 T1P49 T1P50 TIPC47 350Vdc T1P50 T1P-50 motorola dice

    BUS36

    Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L
    Text: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,


    OCR Scan     		PDF BUS37 BUS36 BUS37 MOTOROLA transistor 3-440 MARK B3L

    2N6094

    Abstract: No abstract text available
    Text: MOTOROLA ! SC {DIODES/OPTO} 6367255 MOTOROLA SC 3M D ET|t.3b7255 DIODES/OPTO 34C 0030073 38073 SILICON RF TRANSISTOR DICE (continued) 7 T *- ? ? - W 2C6094 DIE NO. — PNP LINE SOURCE — RF605.323 This die provides performance equal to or better than that of


    OCR Scan     		PDF 3b7255 RF605 2N6094 2C6094 2N6094