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    2500V1 Search Results

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    2500V1 Price and Stock

    Analog Technologies Inc AHV24V2500V1MAW

    HV 24V to 2500V 2.5W DC-DC Conve
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AHV24V2500V1MAW Ammo Pack 1
    • 1 $160
    • 10 $150
    • 100 $130
    • 1000 $130
    • 10000 $130
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    Analog Technologies Inc AHV12V2500V1MAW

    High Voltage - Non-Isolated
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AHV12V2500V1MAW Ammo Pack 1
    • 1 $160
    • 10 $150
    • 100 $130
    • 1000 $130
    • 10000 $130
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    Analog Technologies Inc AHV24VN2500V1MAW

    HV 24V to -2500V 2.5W DC-DC Conv
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AHV24VN2500V1MAW Ammo Pack 1
    • 1 $160
    • 10 $150
    • 100 $130
    • 1000 $130
    • 10000 $130
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    Analog Technologies Inc AHV12VN2500V1MAW

    HV 12V to -2.5kV 2.5W DC-DC Conv
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AHV12VN2500V1MAW Ammo Pack 1
    • 1 $160
    • 10 $150
    • 100 $130
    • 1000 $130
    • 10000 $130
    		Buy Now

    Festo VZWF-L-M22C-N2-500-V-1P4-6

    SOLENOID VALVE
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    DigiKey VZWF-L-M22C-N2-500-V-1P4-6 Bulk 1
    • 1 $1104.37
    • 10 $1104.37
    • 100 $1104.37
    • 1000 $1104.37
    • 10000 $1104.37
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    2500V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STR 6307

    Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
    Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.


    Original     		PDF 500V-1000A J22587 STR 6307 str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module

    application FULL WAVE RECTIFIER

    Abstract: full wave rectifier diodes
    Text: TABLE OF CONTENTS Rectifier Diodes, Low Voltage, Axial Leaded, Hermetic 600V-1000V, 0.5A-2.2A, 30ns-50ns. 6 50V-1000V, 1.5A-5.0A, 70ns-2000ns. 7


    OCR Scan     		PDF 00V-1000V, 30ns-50ns. 0V-1000V, 70ns-2000ns. 000V-16000V, 10mA-1 30ns-50ns, 500V-10000V, 25mA-2 500V-20000V, application FULL WAVE RECTIFIER full wave rectifier diodes

    Untitled

    Abstract: No abstract text available
    Text: Û U A LIT Y TECHNOLOGIES CORP 57E » 74bbû51 00QL 204 fiT2 • ô T Y O ptoisolalor Specifications _ H11G3 /_ y , - Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H 11G series consists o f a gallium arsenide, infrared


    OCR Scan     		PDF H11G3

    GTO thyristor

    Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
    Text: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500


    OCR Scan     		PDF 0001SQ5 SKGH500 000A/1800A 650A/1500A GTO thyristor SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE