ram 6505
Abstract: No abstract text available
Text: H S lS L S li A R R IS HM-6505 SEM ICO N D U CTO R P R O D U C T S DIVISION A DIVISION OF H A RRIS CORPORATION 4096 x 1 CMOS RAM Advance Information Pinout Features 250JL W M A X . TO P V IE W • LO W POWER S T A N D B Y • LO W POWER O P E R A T IO N •
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HM-6505
250JL
200ns
ram 6505
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Untitled
Abstract: No abstract text available
Text: r r i ri0 \B TECHNOLOGY LT1246/LT1247 1MHz Off-Line Current M ode PWM and DC/DC Converter f€OTUR€S D C S C R IP T IO n • Current Mode Operation to 1MHz ■ 30ns Current Sense Delay ■ < 250jli.A Low Start-Up Current ■ Current Sense Leading Edge Blanking
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LT1246/LT1247
250ji
UC1842
1246/LT1247
LT1105
LT1170/LT1171/LT1172
100kHz
LT1241-5
500kHz
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HM-6505
Abstract: HM-6505-5 HMB505B
Text: H S L S L S l! A R R IS H M -6 5 0 5 SE M IC O N D U C T O R P R O D UCT S DIVISION A DIVISION OF MARAIS CORPORATION 4096 X 1 C M O S R A M Advance Information Pinout Features TOP V IE W • LO W POWER S T A N D B Y 250JLIW M A X . • LO W POWER O P E R A T IO N
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HM-6505
250JLIW
35mW/MHz
200ns
HM-6505
HM-6505-5
HMB505B
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Untitled
Abstract: No abstract text available
Text: SFW/I9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V
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SFW/I9Z24
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Untitled
Abstract: No abstract text available
Text: SFP9520 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In = -1 0 0 V 0 -6 & -6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area
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SFP9520
O-220
-100V
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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SFR/U9214
-250V
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Untitled
Abstract: No abstract text available
Text: SFP9510 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n In = -1 0 0 V 1 -2 Q -3 .6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area
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SFP9510
O-220
-100V
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Untitled
Abstract: No abstract text available
Text: B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = o ■ cn CO Avalanche Rugged Technology II ■ - o CD I FEATURES V o cn SFS9Z14 Advanced Power MOSFET Q. A ■ 175°C Operating Temperature ■ Extended Safe Operating Area
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SFS9Z14
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Untitled
Abstract: No abstract text available
Text: S F W /I9 52 0 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology R DS on = ■ Lower Input Capacitance In = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
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-100V
SFW/I9520
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Untitled
Abstract: No abstract text available
Text: S F W /I9 6 3 0 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 0 0 V ^D S o n - 0 -8 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V
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-200V
SFW/I9630
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BEL 1240
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %
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RC4200
RC4200
250jlA
RC4200N
RC4200AN
RM4200D
RM4200AD
RM4200AD/883B
ci73LiO
BEL 1240
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Untitled
Abstract: No abstract text available
Text: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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SFR/U9224
-250V
200nF>
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C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition
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4200D JRC
Abstract: No abstract text available
Text: ANALOG MULTIPLIER NJM4200 The NJM4200 is the industry’s first integrated circuit multiplier to have complete compensation for nonlinearity, the primary source of error and distortion. This is also the first IC mustiplier to have three on-board operational amplifiers
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NJM4200
NJM4200
4200D JRC
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Untitled
Abstract: No abstract text available
Text: S F W /I9 5 1 0 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -100V
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-100V
SFW/I9510
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Untitled
Abstract: No abstract text available
Text: SFP9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - 0 . 2 8 Q. In = -9.7 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area
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SFP9Z24
O-220
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Untitled
Abstract: No abstract text available
Text: SFR/U9224 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 2 .4 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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SFR/U9224
-250V
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RFP45N06
Abstract: No abstract text available
Text: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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RFG45N06,
RFP45N06,
RF1S45N06SM
TA49028.
45CTION
RFP4SN06,
75BVDss
RFP45N06
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Untitled
Abstract: No abstract text available
Text: SFW/I9Z14 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V
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SFW/I9Z14
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Untitled
Abstract: No abstract text available
Text: SFR/U9110 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V
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SFR/U9110
-100V
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 4 5 0 A International I R Rectifier IRG4BC30F P R ELIM IN A R Y Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
O-220AB
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irf9640n
Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Text: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A
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IRF9640
-200V
O-220
1RF9640S
irf9640n
1RF9640
422B
D66A
IRF9640S
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Untitled
Abstract: No abstract text available
Text: SFR/U9024 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -6 0 V ^D S o n - 0.28 Q. In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -60V
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SFR/U9024
Gate-12.
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SFP9614
Abstract: No abstract text available
Text: SFP9614 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 5 0 V ^ D S o n = 4 . 0 £2 lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : -1 0 |^A (M a x.) @ V DS = -250V
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SFP9614
-250V
SFP9614
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