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    2007A

    Abstract: 2sc3649
    Text: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs


    OCR Scan     		2SA1419/2SC3649 2SA1419 250inm2x0 250mmzx0 2007A 2sc3649 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE RN6003 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 0 -4 ± 0 .0 5 ^ 1.7 MAX. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		RN6003 RN5003 --30V, --10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: RN6003 RN6003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. PO W ER SW IT C H IN G APPLICATIONS. 1.7 M A X . 0.4±0.Q 5 -0 = With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		RN6003 RN6003) RN5003 SC-62 250mmzX0 --10mA PDF