2007A
Abstract: 2sc3649
Text: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs
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2SA1419/2SC3649
2SA1419
250inm2x0
250mmzx0
2007A
2sc3649
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE RN6003 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 0 -4 ± 0 .0 5 ^ 1.7 MAX. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN6003
RN5003
--30V,
--10mA
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Untitled
Abstract: No abstract text available
Text: RN6003 RN6003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. PO W ER SW IT C H IN G APPLICATIONS. 1.7 M A X . 0.4±0.Q 5 -0 = With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN6003
RN6003)
RN5003
SC-62
250mmzX0
--10mA
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