arco trimmer
Abstract: No abstract text available
Text: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:
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ARF521
150MHz
ARF521
150MHz.
81MHz
arco trimmer
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Untitled
Abstract: No abstract text available
Text: Datasheet AC/DC Drivers Power Factor Correction and Quasi-Resonant DC/DC converter IC BM1C001F PFC Output level setting function PFC ON/OFF level setting QR low power when load is light Burst operation and frequency decrease function QR maximum frequency control (120kHz)
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BM1C001F
120kHz)
BM1C001F
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ARF461AG
Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Text: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
65MHz
ARF461AG
VK200-4B
40.68mhz
40.68MHz power amplifier
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ATC 100E
Abstract: 700B ARF1505 amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w
Text: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1505
1525-xx
40MHz
ARF1505
ARF15-BeO
RF1505
047mF
ATC 100E
700B
amplifier 9v a 500v
power transistor 1802
2x4700pF
AMPLIFIER 1500w
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SMCTTA32N14A10
Abstract: TA32N14A10
Text: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.
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TA20N20A10
63pb/37sn
SMCTTA32N14A10
TA32N14A10
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Untitled
Abstract: No abstract text available
Text: TPS658600 www.ti.com SLVSA37 – DECEMBER 2009 Advanced Power Management Unit Check for Samples: TPS658600 1 INTRODUCTION 1.1 MAIN FEATURES 1 • BATTERY CHARGER – Complete Charge Management Solution for a Single Cell Li-Ion/Li-Pol Cell With Dynamic Power Management and Thermal Foldback.
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TPS658600
SLVSA37
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TPS6586X
Abstract: No abstract text available
Text: TPS658600 www.ti.com SLVSA37 – DECEMBER 2009 Advanced Power Management Unit Check for Samples: TPS658600 1 INTRODUCTION 1.1 MAIN FEATURES 1 • BATTERY CHARGER – Complete Charge Management Solution for a Single Cell Li-Ion/Li-Pol Cell With Dynamic Power Management and Thermal Foldback.
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TPS658600
SLVSA37
TPS6586X
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FREDFET
Abstract: No abstract text available
Text: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT4F120S
195nS
FREDFET
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S03-400
Abstract: BMS-R 0X0043 TLK110PT s0340
Text: TLK110 SLLS901 – DECEMBER 2011 www.ti.com Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK110 1 Introduction 1.1 Features 1 • Low Power Consumption: <205mW PHY and 275mW with Center Tap Typical • Cable Diagnostics
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TLK110
SLLS901
10/100Mbs
205mW
275mW
10/100Mbs
10Base-T
100Base-TX
S03-400
BMS-R
0X0043
TLK110PT
s0340
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PAS-65112A
Abstract: 250SEC
Text: ADSL POTS SPLITTER MODEL NO. : PAS-65112A FEATURES: 1. PASS FCC PART 68 TEST 2. PASS JATE TEST 3. PASS CHUNG HWA MD6111-1 TEST ELECTRICAL SPECIFICATION : 1.IMPEDANCE : 600 OHMS. 2.INSERTION LOSS : 1.0 dB MAX @ 1 KHZ 3.INSERTION LOSS DISTORTION: ±1.0 dB @ 200 HZ ~ 4KHZ.
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PAS-65112A
MD6111-1
250SEC
200HZ
200SEC
600HZ
100VDC
PAS-65112A
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Untitled
Abstract: No abstract text available
Text: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For
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APT50SM120B
APT50SM120S
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Untitled
Abstract: No abstract text available
Text: APT40SM120B_S APT40SM120B APT40SM120S 1200V, 40A, 80mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For
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APT40SM120B
APT40SM120S
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pn sequence generator
Abstract: L9002DX wireless encrypt
Text: DATA Components Inc SHEET SATURN L9002DX Code Division Spread Spectrum Data Communication Chip • Low Cost Single Chip Baseband Data Communication Solution • Advanced CD/SS digital signal processing architecture • FCC part-15 compliant for unlicensed
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L9002DX
part-15
900MHz
41kbps
83kbps
83kbps
22-bit
pn sequence generator
L9002DX
wireless encrypt
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Untitled
Abstract: No abstract text available
Text: Application Selection Guide 1 Type Designation [IC Type Code] Description Supply Voltage KKC Product characteristics Perfermence KSM- AD series Free SPEC TYPE Low Cost Type) KSM- ND series Free SPEC TYPE ( Low Cost Type) KSM- M series High Noise Immunity ( = KSM-
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600Hz
NRZ2500bit/s)
300usec
100msec
25msec
40msec
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A1013S
Abstract: No abstract text available
Text: APT31M100B2 APT31M100L 1000V, 32A, 0.38Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT31M100B2
APT31M100L
O-264
O-247
A1013S
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Untitled
Abstract: No abstract text available
Text: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT18M80B
APT18M80S
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LD00CM
Abstract: LD02CM ld22cm
Text: DC Solid State Relay Series KD/LD SHORT CIRCUIT PROTECTED OPTICALLY ISOLATED, 10A, 60 VDC Part Number Relay Description KD00CK 5 A Solid State Relay SSR KD02CK 5 A SSR with Switch Status KD20CK 5 A SSR with Short Circuit Protection KD22CK 5 A SSR with Short Circuit Protection
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KD00CK
KD02CK
KD20CK
KD22CK
LD00CM
LD02CM
LD20CM
LD22CM
MIL-R-28750
130ApK
LD00CM
LD02CM
ld22cm
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Untitled
Abstract: No abstract text available
Text: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66M60L
O-264
sw122)
O-247
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R2AA04005F
Abstract: PA035C P30B06040 P50B0400 p50b07040 RS1A03 Q2AA10150
Text: M0007902B TYPE S RS485 GA1060 Serial Interface For Rotary Motor Instruction Manual EN GL I SH No Text on This Page. Preface ÌShipping the product This product in this instruction manual corresponds with the shipping regulations given in the Export Trade Control Ordinance Table 1, item 16 . When these products are exported by
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M0007902B
RS485
GA1060
4-03A/04
R2AA04005F
PA035C
P30B06040
P50B0400
p50b07040
RS1A03
Q2AA10150
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Untitled
Abstract: No abstract text available
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M120J
E145592
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Abstract: No abstract text available
Text: APT38M50J 500V, 38A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT38M50J
E145592
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Untitled
Abstract: No abstract text available
Text: APT43F60B2 APT43F60L 600V, 45A, 0.15Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT43F60B2
APT43F60L
270ns
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT30F50B
APT30F50S
230ns
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Untitled
Abstract: No abstract text available
Text: APT39M60J 600V, 42A, 0.11Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT39M60J
E145592
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