Untitled
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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BU406
Abstract: transistor BU406 bu408 250V transistor npn 2a ICM-10 transistor IC 12A 400v
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage
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BU406/406H/408
O-220
BU406H
BU408
BU406
BU406
transistor BU406
bu408
250V transistor npn 2a
ICM-10
transistor IC 12A 400v
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iC5A
Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150
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BU406/406H/408
O-220
BU406
BU406H
BU408
iC5A
BU406
BU408
transistor BU406
250V transistor npn 2a
BU406H
npn switching transistor Ic 5A
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transistor BU406
Abstract: 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages
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BU406
750ns
20MHz
transistor BU406
400V 100MA NPN
npn transistor 400V
Transistor Transistor Power Horizontal
NPN Transistor 5A 400V
BU406
400V switching transistor
crt horizontal deflection circuit
transistor for horizontal deflection output
NPN Power Transistor 5A 400V
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Untitled
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406H █ APPLICATIONS High Voltage Swltching . █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃
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HBU406H
O-220
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HBU406
Abstract: No abstract text available
Text: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406 █ APPLICATIONS High Voltage Swltching . █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃
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HBU406
O-220
HBU406
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nte98
Abstract: No abstract text available
Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE98
NTE98
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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BU406/406H/408
O-220
95MAX.
54TYP
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Untitled
Abstract: No abstract text available
Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.
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BU406
BU406
O-220
500mA
500mA,
QW-R203-021
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npn switching transistor Ic 5A
Abstract: monochrome tv receiver npn transistor 400V BU406
Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.
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BU406
BU406
O-220
500mA,
QW-R203-021
npn switching transistor Ic 5A
monochrome tv receiver
npn transistor 400V
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bu408 equivalent
Abstract: BU408 BU406 BU406H
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current
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BU406/406H/408
O-220
BU406
BU406H
bu408 equivalent
BU408
BU406
BU406H
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BUT12AF
Abstract: BUT12AF equivalent BUT12 BUT12F
Text: SavantIC Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION
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BUT12F
BUT12AF
O-220Fa
O-220Fa)
BUT12F
BUT12AF
BUT12AF equivalent
BUT12
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bu408
Abstract: BU406
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage
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BU406/406H/408
O-220
bu408
BU406
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BUT12AF equivalent
Abstract: BUT12AF BUT12F
Text: Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING
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BUT12F
BUT12AF
O-220Fa
O-220Fa)
BUT12F
BUT12AF equivalent
BUT12AF
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tf 115 250v 2a
Abstract: BUL53B
Text: BUL53BSM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package
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BUL53BSM
100ns)
100mA
10MHz
tf 115 250v 2a
BUL53B
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Untitled
Abstract: No abstract text available
Text: 2N6078 MECHANICAL DATA Dimensions in mm inches 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) NPN MULTI - EPITAXIAL POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68
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2N6078
O213AA)
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2N6510
Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Text: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass
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2N6510
2N6511
2N6512
2N6513
2N6514
2NG510
2N6514
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bu406
Abstract: bu408 transistor BU408
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cBO 400 V Collector-Emitter Voltage V cEO 200 V Emitter-Base Voltage
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BU406/406H/408
BU408
BU406
BU406H
BU408
bu406
transistor BU408
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PTC10003
Abstract: AX670 ptc10002
Text: "6ÎT595Ô MI CROS EMI 02E CORP/POWER -^ l TECHNOLOGY 00440 D T - 3 3 ' l c? r P T C 10002P 11s DJLDD0144D7 PTC 10003P Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 10 AMPERES 400 VOLTS era 1. BASE 2. COLLECTOR 3. EMITTER r - H i c F
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10002P
10003P
O-247
O-247
PTC10002P
50//s
PTC10003
AX670
ptc10002
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic V cbO Symbol 400 V Collector-Emltter Voltage VcEO 200 V Emitter-Base Voltage
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BU406/406H/408
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BU406
Abstract: BU408 250V transistor npn 2a BU406H 250v 5a npn transistor Vbe 1
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic V cbO Sym bol 400 V C ollector-E m ltter Voltage V cE O 200 V Em itter-Base Voltage
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BU406/406H/408
BU406
BU408
250V transistor npn 2a
BU406H
250v 5a npn
transistor Vbe 1
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UPT521
Abstract: UPT522 UPT523 UPT524 UPT525
Text: UPT521 UPT522 UPT523 UPT524 UPT525 POWER TRANSISTORS 3 Amp, 400V, Planar NPN FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current: 5A • Turn-on Time: 200ns • Turn-off Time: 900ns DESCRIPTION Unitrode high voltage transistors provide
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UPT521
UPT522
UPT523
UPT524
UPT525
200ns
900ns
UPT521
UPT523-
UPT524/52
UPT525
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npn 10003
Abstract: 10003 NPN
Text: PTC10002, PTC10003 Series NPN Silicon Power Darlington Transistors 10 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS
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20fis
200mH
200/xH
npn 10003
10003 NPN
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TO-204aa MICROSEMI PACKAGE OUTLINE
Abstract: PTC10003 10003 NPN
Text: T f n 5950 M I C R O S E M I CORP/POWER ia^^Êlbiis^so 02E 0 0438 D i fpT C 10002 PTC 10003 TECH N D U 3Q Y Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 10 AMPERES 400 VOLTS 0.161 409 n|A • 0.15t (384J 1* 1.050 ‘ (28.66) M A X
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50/xs
200/iH
TO-204aa MICROSEMI PACKAGE OUTLINE
PTC10003
10003 NPN
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