eprom 2516
Abstract: 2516 eprom 2516 eprom texas TMS2516 2516-35 tms4016 2516 ansi y32 2516-45
Text: MOS LSI TMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES D E C E M B E R 1 9 7 9 - R E V IS E D M A Y 1982 • Organization . . . 2 0 4 8 X 8 • Pin Compatible with Existing ROMs and EPROMs 16K, 32K , and 64K
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384-BIT
1979-REVISED
24-PIN
eprom 2516
2516 eprom
2516 eprom texas
TMS2516
2516-35
tms4016
2516
ansi y32
2516-45
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SDE2516
Abstract: Q67100-H8442 2516 memory MOS 2516 2516 8 pin
Text: Nonvolatile Memory 1-KBit E2PROM with l2C Bus Interlace Preliminary Data M O S IC Type Ordering Code Package SDE 2516 Q 67100-H 8442 P-DIP-8 Features • • • • • • • • • SDE 2516 W ord-organized reprogram m able nonvolatile memory in n-channel floating-gate technology E2PROM
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Q67100-H8442
SDE2516
2516 memory
MOS 2516
2516 8 pin
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Q67100-H5092
Abstract: SDA 2516-5
Text: Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features ● Word-organized reprogrammable nonvolatile memory ● ● ● ● ● ● ● ● ● in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
Q67100-H5092
SDA 2516-5
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2546-5
Abstract: Q67100-H5092 Q67100-H5095 Q67100-H5096 Q67100-H5101 AM Transmitter block diagram
Text: Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features ● Word-organized reprogrammable nonvolatile memory ● ● ● ● ● ● ● ● ● in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Original
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Q67100-H5092
2546-5
Q67100-H5092
Q67100-H5095
Q67100-H5096
Q67100-H5101
AM Transmitter block diagram
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PDF
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2516 memory
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with I2C Bus Interface SDA 2516 MOS IC Features W ord-organized reprogram mable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V Serial 2-line bus for data input and output (12C Bus)
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25X16-5
25X16
Q67100-H5092
67100-H3252
67100-H3255
67100-H3256
2516 memory
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532 nm laser diode
Abstract: ML-00005 ML-00040 synoptics 808 nm 100 mw Laser Diode 808 2 pin 1000 mw ML-00024 MS1026 Northrop ML-00039
Text: 1201 Continental Blvd. Charlotte, NC 28273 Phone: 704 588-2340 Fax: (704) 588-2516 Web: www.polysci.com ML-Series Microlaser Devices Enhanced Microlaser Devices Standard Microlaser ML-00005 – TO-3 1064 nm Microlaser (3-8 µJ) ML-00024 – Standard 532 nm Microlaser (2-3 µJ)
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ML-00005
ML-00024
ML-00039
ML-00040
MS1026
532 nm laser diode
ML-00005
ML-00040
synoptics
808 nm 100 mw
Laser Diode 808 2 pin 1000 mw
ML-00024
Northrop
ML-00039
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PDF
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UEI 20 SP
Abstract: 2516 prom JE350
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM with I2C Bus SD A 2516-2 Preliminary Data MOS IC Features • Word-organized, reprogrammable nonvolatile memory In n-channel floating-gate technology E2PROM • 128 x 8 bit organization • Supply voltage 5 V
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Q67100-H5002
UEI 20 SP
2516 prom
JE350
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H5092
B235b05
0Gb3272
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PDF
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Q67100-H5092
Abstract: SDA 2516-5
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
00b3272
SDA 2516-5
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e1414
Abstract: siemens master drive circuit diagram L1152B siemens sda
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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25X16-5
25X16
Q67100-H5092
Q67100-H3252
Q67100-H3255
Q67100-H3256
E1414
023SbG5
siemens master drive circuit diagram
L1152B
siemens sda
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PDF
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TI-85
Abstract: No abstract text available
Text: SIEM ENS Nonvolatile Memory 1-Kbit E2PROM with I^C Bus SD A 2516-2 Preliminary Data MOSIC Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8 bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H5002
TI-85
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PDF
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CM2150
Abstract: 415V Power circuit design 2516N 64X6X8 led matrix 5x7 coding Signetics TTL AS11 A2916
Text: S îQ IIB t iE S CHARACTER GENERATOR 2516 SILICON GATE MOS 2500 SERIES DESCRIPTION SILICO N E PACKAGING T h e Signetics 2 6 1 6 i> a 30 72-b it S ta tic R O M organized as L o w cost silico ne D IP packaging is implem ented and reli* 6 4 x 6 x 8 . T h e p rod uct uses + 5 V , - S V and - 1 2 V pow er sup
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64X6X8
3072-bit
64x6x8.
2616/CM
24-PIN
CM2150
415V Power circuit design
2516N
led matrix 5x7 coding
Signetics TTL
AS11
A2916
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PDF
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Untitled
Abstract: No abstract text available
Text: _ S-201000 1M-bit CMOS MASK ROM The S-201000 is a high-speed, low-power 1,048,576-bit 131,072 words x 8 bits mask programmable ROM, that uses the C M O S process. The control pin can be selected from chip select, chip enable, and output
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S-201000
S-201000
576-bit
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LA 4750 n
Abstract: 330c13
Text: 2 1 k * * 2516 V M a te ria l S e r ie s 3 * * * 2,500±0,05 : * I n s u l a t o r : PBT * C o lo r i N a t u r e * C o n ta ct +30"/ G / F U L94V-0 i B rass * O rd e r In fo rm a tio n 2516 P * * |_* 1 4 2 : ,04 7 ±0.0 4 3 RECDMMENDED 1, No □ f C i r c u i t s
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L94V-0
PSP06401553
PSP06401260
PSP06402061
PSP06401800
PSP06401420
PSP06401921
PSP06401630
PSP06401780
LA 4750 n
330c13
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weitek
Abstract: 2516 8 pin 2516a x10 frequency multiplier vdo x10 "Functional replacement" 2516B 2516C AM29516 ckx a 92
Text: W TL 2516/2516A/2516B/2516C PARALLEL ARRAY MULTIPLIER PRELIMINARY DATA APRIL, 1986 Features SELECTABLE O U T P U T M O DE 16 x 16 PA R A LL E L A RRAY M U LTIPLIER Output latch m ode selectable for clocked or transpar ent operation LOW P O W E R v Ç M O § ^ IT H T T L C O M PA TIBLE I/O
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2516C
AM29516,
MPY16K
2516/2516A/2516B/2516C
weitek
2516 8 pin
2516a
x10 frequency multiplier
vdo x10
"Functional replacement"
2516B
2516C
AM29516
ckx a 92
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Untitled
Abstract: No abstract text available
Text: WTL 2516/2516A/2516B/2516C PARALLEL ARRAY MULTIPLIER PRELIMINARY DATA APRIL, 1986 Features SELECTABLE O U TPU T M ODE 16 x 16 PA R A LLEL ARRAY M U LTIPLIER O utput latch m ode selectable for clocked or transpar ent operation LOW P O W E R k C M O g ^ IT H T T L C O M PA TIB LE I/O
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2516/2516A/2516B/2516C
2516C
MPY16K
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16-CHARACTER
Abstract: COM16 NJU6636 NJU6636CJ SEG1SEG80
Text: NJU6636 PRELIMINARY 16-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER with Icon Display ! GENERAL DESCRIPTION The NJU6636 is a Dot Matrix LCD controller driver for 16-character 2-line display with icon display in single chip. It contains voltage converter and regulator, bleeder resistor, CR
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NJU6636
16-CHARACTER
NJU6636
SEG80
COM16
COM16
NJU6636CJ
SEG1SEG80
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16-CHARACTER
Abstract: COM16 NJU6636 NJU6636CJ B 1403 N circuit Diagram 573 1c RAM 2063 regulator 17-33
Text: NJU6636 PRELIMINARY 16-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER with Icon Display ! GENERAL DESCRIPTION The NJU6636 is a Dot Matrix LCD controller driver for 16-character 2-line display with icon display in single chip. It contains voltage converter and regulator, bleeder resistor, CR
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Original
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NJU6636
16-CHARACTER
NJU6636
SEG80
COM16
COM16
NJU6636CJ
B 1403 N circuit Diagram
573 1c
RAM 2063
regulator 17-33
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PDF
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2516 rom
Abstract: 16-CHARACTER COM16 NJU6636 NJU6636CJ
Text: NJU6636 PRELIMINARY 16-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER with Icon Display GENERAL DESCRIPTION The NJU6636 is a Dot Matrix LCD controller driver for 16-character 2-line display with icon display in single chip. It contains voltage converter and regulator, bleeder resistor, CR
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Original
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NJU6636
16-CHARACTER
NJU6636
SEG80
COM16
2516 rom
COM16
NJU6636CJ
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PDF
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2516 memory
Abstract: 74BCT2827
Text: HIGH SPEED BiCMOS 10-BIT MEMORY DRIVERS ADVANCE INFORMATION IDT54/74FBT2827A/B IDT54/74FBT2828A/B Integrated Device Technology, Inc. FEATURES DESCRIPTION • IDT54/74FBT2827A/2828A is equivalent to 54/74BCT2827A/2828A The FBT series of BiCMOS Memory Drivers are built using
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10-BIT
IDT54/74FBT2827A/B
IDT54/74FBT2828A/B
IDT54/74F
BT2827A/2828A
54/74BCT2827A/2828A
IDT54/74FBT2827B/2828B
MIL-STD-883,
FBT2828A
FBT2828B
2516 memory
74BCT2827
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PDF
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2516 rom
Abstract: No abstract text available
Text: 2516-N.I TRUTH TABLE PIN CONFIGURATION f f l O R I C f DESCRIPTION AC TEST SETUP f f l C TIMING DIAGRAM t* * u CHARACTER ADDRESS/ 1 V, COLUMN ADDRESS «A,-A3> *o 2'T , r aov f\ I i V o .w X » . ; : / “ V P A » v _ 55 ' r ^ - lC L A - ^ CHARACTER FORMAT
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2516-N
6G6GG6666666G666GGG66B66666666666GG66GS6G
2516 rom
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PDF
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Untitled
Abstract: No abstract text available
Text: Special insert arrangements requiring non-standard shells or larger contacts front face of pin inserts illustrated A F F G C A D E G B H B E A Insert Arrangement D B C 25-16 Service Rating C 25L-3 M 25L-7 II II Number of Contacts 6 2 1 2 7 Contact Size 20
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25L-3
25L-7
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Untitled
Abstract: No abstract text available
Text: 2505 Series Features ♦ A v a ila b le in 2 through 15 circuits ♦ W i t h P.C.Board standoff ♦ N y lo n 6/6 UL94V-0 ♦ T i n plated solder tail terminal ♦ P la tin g options are available ♦ A c c e p ts 0.64mm .025" square pin ♦ M a te s with Leoco 2516 or 2517 header
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UL94V-0
500MQ
E82349E
2505S09H00E
2505S10V00E
25O5S1OHO0E
2505S11V00E
2505S11H00E
2505S12VOOE
2505S12H00E
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Untitled
Abstract: No abstract text available
Text: V806ME01 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev D4 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 2516 - 2655 MHz • Tuning Voltage: 0.5-7.5 Vdc • MINI-14H - Style Package
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V806ME01
MINI-14H
Harmonic2500
MINI-14H
MINI-14S
MINI-14LOW
MINI-14H-LOW
MINI-14S-L
MINI-14H-L
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