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    2526-FORM A Search Results

    2526-FORM A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3412SRHA4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/0.25 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP241B Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 100 V/2.0 A, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation

    2526-FORM A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AC2525

    Abstract: 74AC ACT2525 C1996 CGS74C2525 CGS74C2526 CGS74CT2525 CGS74CT2526 10b18 10684
    Text: CGS74C2525  CGS74CT2525 CGS74C2526  CGS74CT2526 1-to-8 Minimum Skew Clock Driver The CGS ’C CT2525 is a minimum skew clock driver with one input driving eight outputs specifically designed for signal generation and clock distribution applications The ’2525


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    PDF CGS74C2525 CGS74CT2525 CGS74C2526 CGS74CT2526 CT2525 AC2525 74AC ACT2525 C1996 CGS74C2525 CGS74C2526 CGS74CT2525 CGS74CT2526 10b18 10684

    Untitled

    Abstract: No abstract text available
    Text: Data sheet Voltage monitoring relays CM-EFS.2 For single-phase AC/DC voltages The CM-EFS.2 is an electronic voltage monitoring relay that provides reliable monitoring of voltages as well as detection of phase loss. Characteristics –– Monitoring of DC and AC voltages 3-600 V


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    Untitled

    Abstract: No abstract text available
    Text: Data sheet Multifunctional three-phase monitoring relays CM-MPS CM-MPS.21 and CM-MPS.41 Characteristics –– Monitoring of three-phase mains for phase sequence can be switched off , phase failure, over- and undervoltage as well as phase unbalance –– TRMS measuring principle


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    ABB STOTZ-KONTAKT S 211

    Abstract: HC-49/ABB STOTZ-KONTAKT S 211
    Text: Data sheet Three-phase monitoring relays CM-PVS CM-PVS.31 and CM-PVS.41 The three-phase monitoring relays CM-PVS.x1 monitor the phase parameters phase sequence, phase failure as well as over- and undervoltage. Characteristics –– Monitoring of three-phase mains for phase sequence


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    Untitled

    Abstract: No abstract text available
    Text: Data sheet Voltage monitoring relays CM-ESS.2 For single-phase AC/DC voltages The CM-ESS.2 is an electronic voltage monitoring relay that provides reliable monitoring of voltages as well as detection of phase loss. Characteristics –– Monitoring of DC and AC voltages 3-600 V


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    Untitled

    Abstract: No abstract text available
    Text: Product Number: 2526-3-01-01-00-00-07-0 Description: 2526 - Slotted Terminal Pin Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 2526-3-01-01-00-00-07-0 200 - 300 " Tin/Lead over Nickel 00 RoHS Compliant SHELL MATERIAL:


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    PDF C36000) C/885 2002/95Annex

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    Abstract: No abstract text available
    Text: Product Number: 2526-2-01-50-00-00-07-0 Description: 2526 - Slotted Terminal Pin Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 2526-2-01-50-00-00-07-0 300 - 500 " Electro-Solder 60/40 Tin/Lead 00 RoHS Compliant


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    PDF C36000) C/885 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 2526-3-01-50-00-00-07-0 Description: 2526 - Slotted Terminal Pin Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 2526-3-01-50-00-00-07-0 300 - 500 " Electro-Solder 60/40 Tin/Lead 00 RoHS Compliant


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    PDF C36000) C/885 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 2526-1-01-50-00-00-07-0 Description: 2526 - Slotted Terminal Pin Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 2526-1-01-50-00-00-07-0 300 - 500 " Electro-Solder 60/40 Tin/Lead 00 RoHS Compliant


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    PDF C36000) C/885 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 2526-4-01-01-00-00-07-0 Description: 2526 - Slotted Terminal Pin Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 2526-4-01-01-00-00-07-0 200 - 300 " Tin/Lead over Nickel 00 RoHS Compliant SHELL MATERIAL:


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    PDF C36000) C/885 2002/95Annex

    epcos 2326

    Abstract: No abstract text available
    Text: Microwave Ceramics Filter 3-Pole Filter for SIRIUS Series/Type: Ordering code: S3P2/6/2 B69813N2327A414 Date: Version: November 2010 C Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white". This ensures that the table disappears invisible for the customer PDF.


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    PDF B69813N2327A414 epcos 2326

    PBL 402 15

    Abstract: PBL403 PBL402 DECT RF Transceiver 1.9 ghz Ericsson Base Station PBL403 05
    Text: Preliminary PBL 4032000 09 August PBL 403 09 3.6 V Differential Power Amplifier for DECT Telecommunications system Description. Key features. The PBL 403 09 is a differential two stage silicon MMIC power amplifier intended for use in handheld cordless terminals in the 1900 MHz band. It can deliver more than 27


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    PDF QSOP16 1522-PBL S-164 PBL 402 15 PBL403 PBL402 DECT RF Transceiver 1.9 ghz Ericsson Base Station PBL403 05

    IRIG 106

    Abstract: Wireless telemetry IRIG MMIC POWER AMPLIFIER S-BAND 2W rf transmiter circuit image ARL-TR-1206 MMIC AMPLIFIER S-BAND 2W IRIG amplitude "silicon on sapphire" block diagram telemetry
    Text: OPTIMIZATION OF A MINATURE TRANSMITTER MODULE FOR WIRELESS TELEMETRY APPLICATIONS Karina Osgood Larry Burke Amy Webb John Muir Christina Dearstine Anthony Quaglietta M/A-COM, Inc. ABSTRACT M/A-COM, Inc. has previously developed a highly integrated transmitter chip set for wireless telemetry


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    PDF ARL-TR-1206, IRIG 106 Wireless telemetry IRIG MMIC POWER AMPLIFIER S-BAND 2W rf transmiter circuit image ARL-TR-1206 MMIC AMPLIFIER S-BAND 2W IRIG amplitude "silicon on sapphire" block diagram telemetry

    DIF35

    Abstract: DIN19213 14435e D-77761 1.0460 vegadif 30 vegadif 45 2526-Form E 2526-Form C hastelloy corrosion
    Text: Level and Pressure Product Information Differential pressure transmitter p Contents Contents 1 Product description 1.1 1.2 2 Function and application 2.1 2.2 2.3 2.4 3 Review . 3


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SDE 2526 MOS 1C Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface with Extended Temperature Range Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E PROM • 256 X 8-bit organization • + 5 V supply voltage


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    PDF Q67100-H9020 E1414 023SbG5

    Untitled

    Abstract: No abstract text available
    Text: 54AC11620, 74AC11620 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS TI0089—02957, JULY 1987— REVISED MARCH 1990 54AC11620 . . JT PACKAGE 74AC11620 . DW OR NT PACKAGE Flow-Through Architecture to Optimize PCB Layout 1 A2 C 2 23 □ B1 A3C 3 4 21 ] B 3 GND C


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    PDF 54AC11620, 74AC11620 TI0089â 54AC11620 500-mA 300-mil

    asda

    Abstract: No abstract text available
    Text: t.DE J> m 653StiDS D4c13fi3 T % « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF T - 4 £ > - 3 -2 8 Nonvolatile Memory 2-Kbit E2PROM with I 2C-Bus SDA 2526-2 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology (E2PROM


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    PDF 653StiDS 13fi3 asda

    V23301

    Abstract: 87NL
    Text: PRODUCT NUMBER SE E TABLE 1 0 0 [2 .5 4] ummmi-is- REVISIONS REV D HOTE THB OOCUMPff B THE PROPERTYOF ß M EMBOCES HRÖPHEWtt jffDWWloy OF 8EÍ« M Í Í W m ^ T ^ ~ Ñ O ECN/ODR# V2004-1 V 22128 V23301 V 50508 V51431 S H E ET INDEX JWB U 2 ÌÙ L 5/05/92


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    PDF V2004-1 V23301 V51431 87NL

    X15V

    Abstract: Z86233 Z86243 P24T 25p05
    Text: < $3105 C u s t o m er P r o c u r em en t S p ec ific a tio n Z86233/243 CMOS Z8 8K ROM Co n s u m e r Co n t r o l l e r P r o c es s o r FEATURES Part ROM RAM Kbytes bytes Z86233 8 Z86243 8 237 236 Package Information I/O 24 32 28-pinDIP,SOIC,PLCC 40-pin DIP,


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    PDF Z86233/243 Z86233 28-pinDIP Z86243 40-pin 44-pin Z86C33/C43 X15V P24T 25p05

    tda 2022

    Abstract: P3332 DC4042 super8 TDA 2324 P05-00 dc4g4204
    Text: MARCOM DC4042 DOCUMENT CONTROL MASTER ^ 2 iL Q E C u s t o m e r P r o c u r e m e n t S p e c ific a t io n Z88C00/01 CM OS SUPER8 ROM LESS MCU GENERAL DESCRIPTION The CMOS Super8® offers new flexibility and s o p h is tic a ­ tion in 8 -bit m icroco n tro lle rs. The Super8 offers all the


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    PDF DC4042 48-pin 68-pin Z88C00/01 Z88C0Q/01 DC-4042-04 tda 2022 P3332 super8 TDA 2324 P05-00 dc4g4204

    A10B1

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M


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    PDF MC-454AC725 72-BIT MC-454AC725 uPD4516821A C-454AC725-A80 -454AC 725-A10 A10B1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC726 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M


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    PDF MC-454AC726 72-BIT MC-454AC726 uPD4516821A MC-454AC726-A80 MC-454AC726-A10robots

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CB646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CB646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of


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    PDF MC-4516CB646 16M-WORD 64-BIT MC-4516CB646 uPD45128841 M14334EJ1V0DS00

    4516CD

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD641 ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: ,uPD45128163 are assembled.


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    PDF MC-4516CD641ES 16M-WORD 64-BIT MC-4516CD641 uPD45128163 M13348X) M14014EJ4V0DS00 144-PIN M144S-80A14 4516CD