SSTL-25
Abstract: MT9VDDT1672 MT9VDDT3272 PC2100 PC2700
Text: 128MB, 256MB, 512MB x72, ECC, SR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT9VDDT1672 – 128MB1 MT9VDDT3272 – 256MB2 MT9VDDT6472 – 512MB2 For component data sheets, refer to Micron’s Web site: www.micron.com Features 184-Pin RDIMM Figures
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128MB,
256MB,
512MB
184-Pin
MT9VDDT1672
128MB1
MT9VDDT3272
256MB2
MT9VDDT6472
512MB2
SSTL-25
MT9VDDT1672
MT9VDDT3272
PC2100
PC2700
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EEPROM 128MB
Abstract: DDR SDRAM Component Micron technology MT46V16M8
Text: 128MB, 256MB, 512MB x64, SR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT8VDDT1664H – 128MB1 MT8VDDT3264H – 256MB2 MT8VDDT6464H – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Figure 1: Features • 200-pin, small-outline dual in-line memory module
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128MB,
256MB,
512MB
200-Pin
MT8VDDT1664H
128MB1
MT8VDDT3264H
256MB2
MT8VDDT6464H
EEPROM 128MB
DDR SDRAM Component Micron technology
MT46V16M8
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MT8VDDT12864HDG-265
Abstract: MT46V32M16 MT46V16M16
Text: 128MB, 256MB, 512MB, 1GB x64, DR : 200-Pin DDR SODIMM Features DDR SDRAM SODIMM MT8VDDT1664HD – 128MB1 MT8VDDT3264HD – 256MB2 MT8VDDT6464HD – 512MB MT8VDDT12864HD – 1GB2 For component data sheets, refer to Micron’s Web site: www.micron.com Features
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128MB,
256MB,
512MB,
200-Pin
MT8VDDT1664HD
128MB1
MT8VDDT3264HD
256MB2
MT8VDDT6464HD
512MB
MT8VDDT12864HDG-265
MT46V32M16
MT46V16M16
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MT46V32M16
Abstract: MT8VDDT6464H MT8VDDT12864HD mt46v16m16 rev a MT46V16M16
Text: 128MB, 256MB, 512MB, 1GB x64, DR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT8VDDT1664HD – 128MB1 MT8VDDT3264HD – 256MB2 MT8VDDT6464HD – 512MB MT8VDDT12864HD – 1GB2 For component data sheets, refer to Micron’s Web site: www.micron.com
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128MB,
256MB,
512MB,
200-Pin
MT8VDDT1664HD
128MB1
MT8VDDT3264HD
256MB2
MT8VDDT6464HD
512MB
MT46V32M16
MT8VDDT6464H
MT8VDDT12864HD
mt46v16m16 rev a
MT46V16M16
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MT5VDDT872AG-335
Abstract: DQ11 PC2100 PC2700 MT5VDDT1672AG-40B BA0B MT46V32M16 MT46V16M16
Text: 64MB, 128MB, 256MB x72, ECC, SR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT5VDDT872A – 64MB1 MT5VDDT1672A – 128MB2 MT5VDDT3272A – 256MB2 For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module
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128MB,
256MB
184-Pin
MT5VDDT872A
64MB1
MT5VDDT1672A
128MB2
MT5VDDT3272A
256MB2
184-pin,
MT5VDDT872AG-335
DQ11
PC2100
PC2700
MT5VDDT1672AG-40B
BA0B
MT46V32M16
MT46V16M16
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Samsung EOL
Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM
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288-576Mb
10-20ns
18-72Mb
64Kb-16Mb
8Mb-64Mb
16Mb-512Mb
16Mb-1Gb
256Mb-2Gb
200Mhz
-40oC
Samsung EOL
IS42S81600F
is42s16320
IS43DR16320
IS42S32200L
IS49NLC36800
IS43R32400E
IS46R
Mobile SDRAM
IS42S32200E
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Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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md2817
Abstract: 82443GX 440GX 82371EB "full hd" mobile phone camera pinout PIIX4E MD2716 2906380
Text: Intel 440GX AGPset: 82443GX Host Bridge/Controller Datasheet June 1998 Order Number: 290638-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
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440GX
82443GX
md2817
82371EB
"full hd" mobile phone camera pinout
PIIX4E
MD2716
2906380
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Untitled
Abstract: No abstract text available
Text: SamsungSemi conduct orEur ope2008 i magi net r ueupgr adecompat i bi l i t y What evert her easonf oryourcust omer ' snextPCmemor yupgr ade,you' l l wantt omakesur ecompat i bi l i t yi sagi ven,notapl easantsur pr i se.Wi t h Samsungpr emi um qual i t yPC memor
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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sandisk nAND flash 64Mb
Abstract: MF32 sram card
Text: MITSUBISHI L-81001-0B ELECTRIC Mitsubishi IC Card Technical Direction Mitsubishi IC Card Low Cost High Density IC CARD High Performance Return to Contents L-81004-0K MITSUBISHI ELECTRIC MITSUBISHI IC CARD STORAGE CARD Flash ATA PC Card Capacity(MB) Type Name
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L-81001-0B
L-81004-0K
MF0064M-07BTXX
MF0128M-07BTXX
MF0256M-07BTXX
MF0512M-07BTXX
MF0640M-07BFXX
68P-011
68P-001
256Mb
sandisk nAND flash 64Mb
MF32
sram card
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Untitled
Abstract: No abstract text available
Text: Intel 440GX AGPset: 82443GX Host Bridge/Controller Datasheet June 1998 Order Number: 290638-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
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440GX
82443GX
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FW82443GX
Abstract: FW82443GX SL2TF 16MX4 16MX8 32MX72 440GX 82443GX intel DOC 443GX
Text: R Intel 82443GX AGPset Specification Update Specification Update April, 2000 Notice: The Intel 82443GX AGPset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.
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82443GX
FW82443GX
FW82443GX SL2TF
16MX4
16MX8
32MX72
440GX
intel DOC
443GX
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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