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    GDDR

    Abstract: K4D553238E-JC33 k4d553238e-jc40
    Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D553238E-JC 256Mbit 32Bit 144-Ball K4D553238E-JC33/36 15tCK 14tCK 10tCK GDDR K4D553238E-JC33 k4d553238e-jc40

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C

    TRUEFFS

    Abstract: toshiba toggle mode nand toshiba bios Diskonchip 1000H 800H
    Text: ADVANCE INFORMATION Am71LVM032 32 MB Disk-on-Chip Single Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk – full hard disk drive emulation — 32MByte 256Mbit capacity — Single die chip, based on 0.16 µm NAND flash


    Original     		PDF Am71LVM032 32MByte 256Mbit) 48-pin 8-bit/16-bit TRUEFFS toshiba toggle mode nand toshiba bios Diskonchip 1000H 800H

    diskonchip

    Abstract: MD3831-D16-V3Q18 diskonchip g4 MD3831-D16-V3Q18-X AP-DOC-057 smartphone MOTHERBOARD CIRCUIT diagram AD10 PR31700 password lock protection using mobile phone f Diskonchip Millennium Plus
    Text: Data Sheet Mobile DiskOnChip Plus 16/32MByte 1.8V I/O Flash Disk, Protection and Security-Enabling Features Highlights Mobile DiskOnChip Plus 16/32MByte 128/256Mbit is one of the industry’s most efficient storage solutions, with the fastest write rates, the


    Original     		PDF 16/32MByte 128/256Mbit) 95-SR-000-10-8L diskonchip MD3831-D16-V3Q18 diskonchip g4 MD3831-D16-V3Q18-X AP-DOC-057 smartphone MOTHERBOARD CIRCUIT diagram AD10 PR31700 password lock protection using mobile phone f Diskonchip Millennium Plus

    dax6

    Abstract: Mobile SDRAM
    Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array


    Original     		PDF V55C1256164MG 256Mbit 100MHz dax6 Mobile SDRAM

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		PDF V54C3256 256Mbit x16Mbit

    9.1 b3

    Abstract: No abstract text available
    Text: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1256 256Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 400MHz 9.1 b3

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		PDF V54C3256 256Mbit 16Mbit

    9.1 b3

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1256 256Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 9.1 b3

    K4S561632C

    Abstract: No abstract text available
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


    Original     		PDF HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver


    Original     		PDF 512MB HB54A5129F1-B75B/10B HB54A5129F1 256Mbits M01E0107 E0090H60

    Untitled

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept.2001 K4S560832C CMOS SDRAM


    Original     		PDF K4S560832C 256Mbit 100MHz A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Super low power 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S560832C CMOS SDRAM Revision History


    Original     		PDF K4S560832C 256Mbit 100MHz A10/AP

    PC133-333-520

    Abstract: PC100-222 PC133-222 PC133-333 L-DIM-168-33 PC133 registered reference design
    Text: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology.


    Original     		PDF 64/72V32300GU 64/72-Bit, 256MByte 168-pin 256Mbit PC100-222, PC133-333 PC133-222 PC133 PC133-333-520 PC100-222 PC133-222 L-DIM-168-33 PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N56163QG 256Mbit

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J55323QG 256Mbit

    Untitled

    Abstract: No abstract text available
    Text: K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560832C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001


    Original     		PDF K4S560832C 256Mbit A10/AP

    GDDR

    Abstract: K4D551638H-LC50
    Text: K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4D551638H 256Mbit 66pin 65TYP 20MAX 25TYP GDDR K4D551638H-LC50

    V54C3256

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/C) 256Mbit SDRAM 3.3 VOLT, TSOP II / TRUECSP PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit

    39S256160T

    Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
    Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled


    OCR Scan     		PDF YB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T APA10 39S256160T-8 39S256400T-8

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M X 4bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM44S64230A CMOS SDRAM R evision H isto ry


    OCR Scan     		PDF KM44S64230A 256Mbit A10/AP