GDDR
Abstract: K4D553238E-JC33 k4d553238e-jc40
Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.
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K4D553238E-JC
256Mbit
32Bit
144-Ball
K4D553238E-JC33/36
15tCK
14tCK
10tCK
GDDR
K4D553238E-JC33
k4d553238e-jc40
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PDF
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K4S561632C-TC/L75
Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History
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K4S561632C
256Mbit
16bit
A10/AP
K4S561632C-TC/L75
K4S561632C
K4S561632C-TC
K4S561632C-TC/L7C
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PDF
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TRUEFFS
Abstract: toshiba toggle mode nand toshiba bios Diskonchip 1000H 800H
Text: ADVANCE INFORMATION Am71LVM032 32 MB Disk-on-Chip Single Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk – full hard disk drive emulation — 32MByte 256Mbit capacity — Single die chip, based on 0.16 µm NAND flash
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Am71LVM032
32MByte
256Mbit)
48-pin
8-bit/16-bit
TRUEFFS
toshiba toggle mode nand
toshiba bios
Diskonchip
1000H
800H
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PDF
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diskonchip
Abstract: MD3831-D16-V3Q18 diskonchip g4 MD3831-D16-V3Q18-X AP-DOC-057 smartphone MOTHERBOARD CIRCUIT diagram AD10 PR31700 password lock protection using mobile phone f Diskonchip Millennium Plus
Text: Data Sheet Mobile DiskOnChip Plus 16/32MByte 1.8V I/O Flash Disk, Protection and Security-Enabling Features Highlights Mobile DiskOnChip Plus 16/32MByte 128/256Mbit is one of the industry’s most efficient storage solutions, with the fastest write rates, the
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16/32MByte
128/256Mbit)
95-SR-000-10-8L
diskonchip
MD3831-D16-V3Q18
diskonchip g4
MD3831-D16-V3Q18-X
AP-DOC-057
smartphone MOTHERBOARD CIRCUIT diagram
AD10
PR31700
password lock protection using mobile phone f
Diskonchip Millennium Plus
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PDF
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dax6
Abstract: Mobile SDRAM
Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array
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V55C1256164MG
256Mbit
100MHz
dax6
Mobile SDRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3256
256Mbit
x16Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns
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V54C3256
256Mbit
x16Mbit
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PDF
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9.1 b3
Abstract: No abstract text available
Text: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1256
256Mbit
16Mbit
DDR2-533
DDR2-667
DDR2-800
400MHz
9.1 b3
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PDF
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2
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V54C3256
256Mbit
16Mbit
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PDF
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9.1 b3
Abstract: No abstract text available
Text: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1256
256Mbit
16Mbit
DDR2-533
DDR2-667
DDR2-800
9.1 b3
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PDF
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K4S561632C
Abstract: No abstract text available
Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM
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K4S561632C
256Mbit
16bit
100MHz
A10/AP
K4S561632C
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PDF
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marking code EY SMD
Abstract: PC100-222-620 P-TSOPII-54
Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN
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HYB39L256160AC/T
256MBit
16Mbit
P-TFBGA-54,
PC133
SPT03919-3
marking code EY SMD
PC100-222-620
P-TSOPII-54
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver
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512MB
HB54A5129F1-B75B/10B
HB54A5129F1
256Mbits
M01E0107
E0090H60
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PDF
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Untitled
Abstract: No abstract text available
Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept.2001 K4S560832C CMOS SDRAM
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K4S560832C
256Mbit
100MHz
A10/AP
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PDF
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Untitled
Abstract: No abstract text available
Text: K4S560832C CMOS SDRAM 256Mbit SDRAM Super low power 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S560832C CMOS SDRAM Revision History
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K4S560832C
256Mbit
100MHz
A10/AP
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PDF
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PC133-333-520
Abstract: PC100-222 PC133-222 PC133-333 L-DIM-168-33 PC133 registered reference design
Text: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology.
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64/72V32300GU
64/72-Bit,
256MByte
168-pin
256Mbit
PC100-222,
PC133-333
PC133-222
PC133
PC133-333-520
PC100-222
PC133-222
L-DIM-168-33
PC133 registered reference design
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QG
256Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QG
256Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560832C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001
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K4S560832C
256Mbit
A10/AP
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PDF
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GDDR
Abstract: K4D551638H-LC50
Text: K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4D551638H
256Mbit
66pin
65TYP
20MAX
25TYP
GDDR
K4D551638H-LC50
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PDF
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V54C3256
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/C) 256Mbit SDRAM 3.3 VOLT, TSOP II / TRUECSP PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3256
256Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3256
256Mbit
x16Mbit
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PDF
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39S256160T
Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled
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OCR Scan
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YB39S25640x/80x/16xT
256MBit
P-TSOPII-54
400mil
P-TSOPII-54
400mil,
TSOPII-54
TSOP54-2
39S256160T
APA10
39S256160T-8
39S256400T-8
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M X 4bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM44S64230A CMOS SDRAM R evision H isto ry
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OCR Scan
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KM44S64230A
256Mbit
A10/AP
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PDF
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