Untitled
Abstract: No abstract text available
Text: High Reliability Serial EEPROMs Microwire BUS BR93□□□family BU9888FV-W No.11001EAT20 ●Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Features 1 256wordx16bits architecture 4k bit serial EEPROM 2) Operating voltage range 3.0～3.6V)
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BR93family
BU9888FV-W
BU9888FV-W
256word
16bits
R1120A
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2NEX
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM
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BU9888FV-W
BU9888FV-W
256word
16bits
2NEX
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Untitled
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. Features 256wordx16bits architecture 4k bit serial EEPROM Operating voltage range(3.0V to 3.6V)
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BU9888FV-W
BU9888FV-W
256wordÃ
16bits
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Non-Volatile RAM
Abstract: S-22H DP-018
Text: Rev.1.1 S-22 Series PARALLEL NON-VOLATILE RAM The S-22 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable 2 memory E PROM to backup the SRAM. The organization is 256wordx4-bit (total 1K bits) for the S-22H12 and the S-22S12, and 64word×4-bit (total 256 bits) for the S-22H10 and the S-22S10.
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256word
S-22H12
S-22S12,
64word
S-22H10
S-22S10.
S-22H12
X2212
S-22S12
S-22H10
Non-Volatile RAM
S-22H
DP-018
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ADV476
Abstract: No abstract text available
Text: ,. DEVICES ANALOG CMOS, 80 MHzMonolithic 256Word Power-Down ColorPaletteRAM-DACs LIllI ADV4111ADV415 I I FEATURES Persona' System/Z- and VGA- Compatible 80, 88, 50 and 35 MHz PipelinedOp8rltion ADV4781ADV.71 ADV8 Pin end Functional Compatible Power.oown Mode
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256Word
ADV4111ADV415
ADV476:
RS-M3AIRS-170
44-Pin
ADV4781ADV
On-808rd
1118E1FAU.
ADV476
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P256
Abstract: P512 BIT12 spare assignment standard
Text: ECC Algorithm 256Word Flash Planning Group Memory Division Samsung Electronics Co., Ltd This is only example algorithm for SW ECC. In case of OneNAND which supports HW ECC, parity bit position can be changed. Product Product Planning Planning & & Application
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256Word)
256Word
24bit)
14bit
f2048P2048
P1024P1024'
P2048P2048
P256
P512
BIT12
spare assignment standard
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Untitled
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM
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BU9888FV-W
BU9888FV-W
256word
16bits
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Untitled
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM
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BU9888FV-W
BU9888FV-W
256wordÃ
16bits
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93l46
Abstract: 93l66 93L56 s93L46ar marking 66a S-93L46A S-93L56A S-93L66A transistor marking code sk S93L66
Text: S-93L46A/56A/66A LOW VOLTAGE OPERATION 3-WIRE SERIAL E2PROM www.sii-ic.com Rev.6.0_00 Seiko Instruments Inc., 2004-2010 The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit 3-wire serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit, 256word × 16-bit, respectively. Each is capable of sequential read, at which time addresses are automatically
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S-93L46A/56A/66A
S-93L46A/56A/66A
64-word
16-bit,
128-word
256word
16-bit
93l46
93l66
93L56
s93L46ar
marking 66a
S-93L46A
S-93L56A
S-93L66A
transistor marking code sk
S93L66
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SPRU132B
Abstract: No abstract text available
Text: SMQ320C32 DIGITAL SIGNAL PROCESSOR SGUS027B – APRIL 1998 – REVISED MARCH 1999 D D D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C; QML Processing High-Performance Floating-Point Digital Signal Processor DSP SMQ320C32-50 (5 V)
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SMQ320C32
SGUS027B
SMQ320C32-50
40-ns
SMQ320C32-60
33-ns
32-Bit
40-Bit
SPRU132B
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Untitled
Abstract: No abstract text available
Text: TVP3026M Video Interface Palette SGLS101A January 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TVP3026M
SGLS101A
5962-9675801NYB
TVP3026-175MHFG
TVP3026-175MHFGB
5962-9675801QXA
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Untitled
Abstract: No abstract text available
Text: TMS320LF2407, TMS320LF2406, TMS320LF2402 DSP CONTROLLERS SPRS094E – APRIL 1999 – REVISED AUGUST 2000 D High-Performance Static CMOS Technology D D D D D External Memory Interface LF2407 – 33-ns Instruction Cycle Time (30 MHz) – 30 MIPS Performance
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TMS320LF2407,
TMS320LF2406,
TMS320LF2402
SPRS094E
33-ns
T320C2xx
F243/F241/C242
F240/C240
TMS320C1x/2x
16-Bit
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Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C1297NCZAD Microcontroller D ATA SH E E T D S -T M 4C 1297 NCZ A D- 1 5 8 0 2 . 2 7 2 9 S P M S 435A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are
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TM4C1297NCZAD
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diode p4e
Abstract: No abstract text available
Text: TLC34058 256 x 24 COLOR PALETTE SLAS050 – D3961, NOVEMBER 1991 • • • • • • • • LinEPIC 1-µm CMOS Process 125-MHz Pipelined Architecture Available Clock Rates . . . 80, 110, 125, 135 MHz Dual-Port Color RAM 256 Words x 24 Bits Bit Plane Read and Blink Masks
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TLC34058
SLAS050
D3961,
125-MHz
RS-343-A
Bt458
TMS340XX
diode p4e
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f2407
Abstract: TMS320LC2402A TMS320LC2403A TMS320LC2404A TMS320LC2406A TMS320LF2402A TMS320LF2403A TMS320LF2406A TMS320LF2407A TMS320LF2407A CPU and Instruction Set
Text: TMS320LF2407A, TMS320LF2406A, TMS320LF2403A, TMS320LF2402A TMS320LC2406A, TMS320LC2404A, TMS320LC2403A, TMS320LC2402A DSP CONTROLLERS SPRS145L − JULY 2000 − REVISED SEPTEMBER 2007 D High-Performance Static CMOS Technology D External Memory Interface LF2407A
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TMS320LF2407A,
TMS320LF2406A,
TMS320LF2403A,
TMS320LF2402A
TMS320LC2406A,
TMS320LC2404A,
TMS320LC2403A,
TMS320LC2402A
SPRS145L
LF2407A)
f2407
TMS320LC2402A
TMS320LC2403A
TMS320LC2404A
TMS320LC2406A
TMS320LF2402A
TMS320LF2403A
TMS320LF2406A
TMS320LF2407A
TMS320LF2407A CPU and Instruction Set
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Untitled
Abstract: No abstract text available
Text: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and
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SY10422-4
SY10422
1024-bit
256words-by-4
SY10422-3DCF
D24-1
F24-1
SY10422-4DCF
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cy7c122
Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
Text: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The CY7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro
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CY7C122
C122-25SC
CY7C122-25LC
CY7C122-25DM
CY7C122-35PC
CY7C122-35SC
CY7C122-35DC
CY7C122-35LC
CY7C122-35DM
CY7C122-35LMB
cy7c122
CY7C122-35DMB
cy7c122-25PC
7C122
CY7C122-25SC
CY7C122-35
CY7C122-25DC
CY7C122-25
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Untitled
Abstract: No abstract text available
Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1095 - REVISED JUNE 1995 * Organization: I • • • • • • • • • • • • • • • • • • • • HKC PACKAGE TOP VIEW - DRAM: 262144 Words x 16 Bits - SAM: 256Words x 16 Bits
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SMJ55166
16-BIT
SGMS057A
256Words
8GMS057A
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Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area
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DS5752Ã
256word
48-bit
48-blt
48-bit
08125-009B
Am99ClOA
8125-012A
8125-011A
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EK-016-8905
Abstract: RP5B02N
Text: KOM EK-016-8905 CMOS 2k bit SRAM 256wordX8bit RP5B02N/W The RP5B02 is a 2k bit high speed CMOS static RAM organized 256 words by 8 bits and operates from a single 5 V supply. The RP5B02 has CMOS level inputs and outputs, and the outputs are 3-state output type.
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RP5B02N/W
EK-016-8905
256wordX8bit)
RP5B02
RP5B02N
RP5B02W
24PIN
300mil
EK-016-8905
RP5B02N
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Untitled
Abstract: No abstract text available
Text: * SYNERGY SY10422-5 SY10422-6 256 x 4 ECL RAM SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4-bits, meets the standard 10K family signal and
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SY10422-5
SY10422-6
SY10422
1024-bit
256words-by-4-bits,
SY10422-5DCF
D24-1
SY10422-5FCF
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TMS320P17
Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Text: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C
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TMS320C1X
144/256-Word
TMS320E14/P14/E15/P15/E17/P17)
TMS320P14/P15/P17)
64K-Word
32-Bit
TMS320C10
200-ns
TMS320C930)
TMS320P17
d6151
filter lark eng
1D2T
ltw 8 pin
TMS320P14
TMS320LC15
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RAV 14202
Abstract: TMS320C26
Text: SMJ320C26 DIGITAL SIGNAL PROCESSOR 68-P IN GB PIN G R ID A R R A Y C E R A M IC P A C K A G E t TO P V IE W 100-ns Instruction Cycle Time 1568 Words of Configurable On-Chip Data/Program RAM 1 2 3 4 5 6 7 6 9 10 11 256 Words of On-Chip Program ROM 128k Words of Data/Program Space
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SMJ320C26
100-ns
SMJ320C25
16-Bit
32-Bit
RAV 14202
TMS320C26
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tc528126
Abstract: TC528126B
Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The
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TC52812GBJ/BZ
072-words
256-words
TC528126BJ/BZ
TC52812GB
tc528126
TC528126B
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