KM428C258
Abstract: No abstract text available
Text: PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random
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KM428C258
KM428C258
110ns
130ns
150ns
256IMENSIONS
40-PIN
40/44-PIN
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KM428V256
Abstract: ram 256x8 KM428C256
Text: KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ' Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random
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KM428C256,
KM428V256
KM428C/V256
40-PIN
40/44-PIN
KM428V256
ram 256x8
KM428C256
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Untitled
Abstract: No abstract text available
Text: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS floating gate process. Its 256K bits of
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HT24LC256
HT24LC256
256K-bit
40-year
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Untitled
Abstract: No abstract text available
Text: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS loating gate process. Its 256K bits of
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HT24LC256
HT24LC256
256K-bit
40-year
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kje w6
Abstract: No abstract text available
Text: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.
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KM428C257
KM428C257
130ns
150ns
110ns
40-PIN
40/44-PIN
KM4216C/V255/6/8
64-PIN
D02E313
kje w6
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PDF
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KM428C257
Abstract: KM428C256 Video RAM G022134 mz57
Text: KM428C256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.
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KM428C256
512x8
110ns
130ns
150ns
110mA
100mA
DD22151
40-PIN
KM428C257
KM428C256
Video RAM
G022134
mz57
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PDF
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KM428C257
Abstract: aatw
Text: PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access
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KM428C257
KM428C257
40-PIN
40/44-PIN
aatw
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual
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D01bb52
KM428C256,
KM428V256
512x8
KM428C/V256
110ns
130ns
150ns
50nsCYCLE
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Untitled
Abstract: No abstract text available
Text: CMOS DUAL-PORT RAM MODULE 128K 16K x 8-BIT & 256K (32K x 8-BIT) advance INF0^ ?36 IDT7M137 FEATURES: DESCRIPTION • High-density 128K/256K-bit C M O S dual-port R A M module The IDT7M136/137 are 128K/256K-bit high-speed C M O S dual-port static R AM modules constructed on a multi-layered
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IDT7M137
128K/256K-bit
IDT7M136/137
IDT7134
IDT7M136)
IDT7M137)
IDT54/74FCT138
R12-14
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual
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G01b7Db
KM428C258
KM428C258
110ns
130ns
150ns
40-PIN
40/44-PIN
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PDF
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MN102H730FGT
Abstract: MN102H73G MN102H73K MN102HF73G
Text: MN102H730FGT, MN102H73G, MN102H73K MN102H730FGT Type Internal ROM type ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73G External MN102H73K MN102HF73G Mask ROM 128K 10K TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K
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MN102H730FGT,
MN102H73G,
MN102H73K
MN102H730FGT
MN102H73G
MN102HF73G
TQFP128-P-1414B
MN102HF73K
TQFP128-P-1414A
MN102H730FGT
MN102H73G
MN102H73K
MN102HF73G
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8419X
Abstract: 8419 G DP8408 DP643
Text: DP8417/NS32817/8418/32818/8419/32819/8419X/32819X EHSemiconductor National PREL" DP8417/NS32817, 8418/32818, 8419/32819, 8419X/ 32819X 64k, 256k Dynamic RAM Controller/Drivers General Description Operational Features The DP8417/8418/8419/8419X represent a family of 256k
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S32817/8418/32818/8419/32819/8419X/32819X
DP8417/8418/8419/8419X
DP8419
8419X
8419 G
DP8408
DP643
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GENERAL ELECTRIC OCR 125 KW
Abstract: No abstract text available
Text: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K 10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A
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MN102H73
MN102H730FGT
TQFP128-P-1414B
MN102H73G
MN102H73K
TQFP128-P-1414A
MN102HF73G
MN102HF73K
TQFP128-P-1414B
GENERAL ELECTRIC OCR 125 KW
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MN101EF16K
Abstract: MN101E16G QFP100-P-1818B
Text: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type 256K MN101EF16N FLASH 384K 256K 512K 6K 12K 20K 16K 30K QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16G
MN101E16K
MN101E16M
MN101EF16K
MN101EF16N
QFP100-P-1818B
LQFP100-P-1414,
-P1414
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MN102HF73K
Abstract: MN102HF73G MN102H73 MN102H730FGT MN102H73G MN102H73K TQFP128-P
Text: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K 10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A
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MN102H73
MN102H730FGT
MN102H73G
MN102HF73G
MN102HF73K
TQFP128-P-1414B
MN102H73K
TQFP128-P-1414A
MN102HF73K
MN102HF73G
MN102H730FGT
MN102H73G
MN102H73K
TQFP128-P
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IDT71V256
Abstract: IDT71V256SA P28-2 A 3101 8 pin
Text: IDT71V256SA 3.3V CMOS STATIC RAM 256K 32K x 8-BIT LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache
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IDT71V256SA
15/20/25ns
28-pin
IDT71V256
SO28-5)
P28-2)
PZ28-1)
IDT71V256
IDT71V256SA
P28-2
A 3101 8 pin
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet October 9, 2002 FEATURES q 15ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state
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UT8R256K16
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type 256K MN101EF16N FLASH 384K 256K 512K 6K 12K 20K 16K 30K QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16G
MN101E16K
MN101E16M
MN101EF16K
MN101EF16N
QFP100-P-1818B
LQFP100-P-1414,
-P1414
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IBM025161LG5D60
Abstract: vram dual port IBM025161 IBM025170 "Video RAM" BM025 ibm025170lg5 IBM025161LG5D-6H IBM025171256 IBM025160256
Text: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:
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IBM025160256
IBM025171256
16EDO,
IBM025170256
IBM025161256
IBM025160
IBM025170
IBM025161
IBM025171
IBM025161LG5D60
vram dual port
IBM025161
IBM025170
"Video RAM"
BM025
ibm025170lg5
IBM025161LG5D-6H
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet May 23, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state
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UT8R256K16
48-lead
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8419
Abstract: DP84300
Text: DP8417/NS32817/8418/32818/8419/32819/8419X/32819X National Semiconductor PRELIMINARY DP8417/NS32817, 8418/32818, 8419/32819, 8419X/ 32819X 64k, 256k Dynamic RAM Controller/Drivers General Description Operational Features The DP8417/8 418/8419/8419X represent a family of 256k
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S32817/8418/32818/8419/32819/8419X/32819X
DP8417/8
418/8419/8419X
DP8419
8419
DP84300
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PDF
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IBM025161
Abstract: IBM025161LG5D-6 BM025 IBM025161LG5D-6H IBM025170 ibm025161lg5d-60 ibm025171 IBM025161LG5D60 IBM025170LG5D-60 IBM025171NG5D-60
Text: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:
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IBM025160256
IBM025171256
16EDO,
IBM025170256
IBM025161256
IBM025160
IBM025170
IBM025161
IBM025171
IBM025161LG5D-6
BM025
IBM025161LG5D-6H
IBM025170
ibm025161lg5d-60
ibm025171
IBM025161LG5D60
IBM025170LG5D-60
IBM025171NG5D-60
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philips PE 2470
Abstract: 87C451 circuit diagram 24 column printer 41256 dram printer 8051 8051 and printer 74LS244 80C451 80C51 83C451
Text: INTEGRATED CIRCUITS AN417 256k Centronics printer buffer using the 87C451 microcontroller January 1992 Philips Semiconductors Philips Semiconductors Application note 256k Centronics printer buffer using the 87C451 microcontroller AN417 indicated by its name. This feature is an advantage when using /WR
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AN417
87C451
philips PE 2470
circuit diagram 24 column printer
41256 dram
printer 8051
8051 and printer
74LS244
80C451
80C51
83C451
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16K Type MN101E16M MN101E16Y MN101EF16K Mask ROM Internal ROM type 256K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101EF16Z FLASH 384K 256K 512K 12K 20K 16K 30K LQFP100-P-1414, QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16K
MN101E16M
MN101E16Y
MN101EF16K
MN101EF16Z
LQFP100-P-1414,
QFP100-P-1818B
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