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    256K X 8 DRAM Search Results

    256K X 8 DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    256K X 8 DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSP 10 415

    Abstract: VITELIC
    Text: MOSEL VITELIC V104J8 V104J8 256K CMOS MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. Decoupling capacitors, mounted


    Original     		PDF V104J8 V104J8/9 30-lead KSP 10 415 VITELIC

    Untitled

    Abstract: No abstract text available
    Text: AK58256AG / AK58256AS 262,144 x 8 bit CMOS Dynamic Random Access Memory ACCUTEK DESCRIPTION Front View The Accutek AK58256AG/AS high density memory module is a random access memory organized in 256K x 8 bit words. The assembly consists of two 256K x 4 DRAMs in surface mount


    Original     		PDF AK58256AG AK58256AS AK58256AG/AS 30-Pin AK58256

    KM428C258

    Abstract: No abstract text available
    Text: PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random


    OCR Scan     		PDF KM428C258 KM428C258 110ns 130ns 150ns 256IMENSIONS 40-PIN 40/44-PIN

    KM428V256

    Abstract: ram 256x8 KM428C256
    Text: KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ' Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random


    OCR Scan     		PDF KM428C256, KM428V256 KM428C/V256 40-PIN 40/44-PIN KM428V256 ram 256x8 KM428C256

    Untitled

    Abstract: No abstract text available
    Text: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9


    OCR Scan     		PDF V105HJ8/9 V105HJ8/9 30-lead V10SHJ8/9 V105H

    53C256

    Abstract: 53C104 V53C104
    Text: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory


    OCR Scan     		PDF V104J8/9 V104J8/9 30-lead 53C256 53C104 V53C104

    Untitled

    Abstract: No abstract text available
    Text: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature


    OCR Scan     		PDF V105AJ8/9 30-lead V105AJ8/9 V105A

    kje w6

    Abstract: No abstract text available
    Text: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.


    OCR Scan     		PDF KM428C257 KM428C257 130ns 150ns 110ns 40-PIN 40/44-PIN KM4216C/V255/6/8 64-PIN D02E313 kje w6

    KM428C257

    Abstract: KM428C256 Video RAM G022134 mz57
    Text: KM428C256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.


    OCR Scan     		PDF KM428C256 512x8 110ns 130ns 150ns 110mA 100mA DD22151 40-PIN KM428C257 KM428C256 Video RAM G022134 mz57

    KM428C257

    Abstract: aatw
    Text: PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access


    OCR Scan     		PDF KM428C257 KM428C257 40-PIN 40/44-PIN aatw

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation


    OCR Scan     		PDF GDDS311 V104J8/9 104J8/9 30-lead b3533Tl

    Untitled

    Abstract: No abstract text available
    Text: I f ' VITEUC V104HJ8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE PRELIMINARY Features Description * 262,144 x 8 (or x 9) bit organization The V104HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two


    OCR Scan     		PDF V104HJ8/9 V104HJ8/9 30-lead

    104J32

    Abstract: No abstract text available
    Text: MOSEL- VITELIC PRELIMINARY V104J32, V104J36 256K x 32, 256K x 36 SIMM Features Description m The V104J32 M em ory Module is organized as 2 62.144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The V104J36 is organized as


    OCR Scan     		PDF V104J32, V104J36 V104J32 72-lead V104J32/36 104J32

    Untitled

    Abstract: No abstract text available
    Text: I‘f VITEUC V104AJ8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V104AJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two


    OCR Scan     		PDF V104AJ8/9 V104AJ8/9 30-lead

    micron DRAM

    Abstract: No abstract text available
    Text: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply


    OCR Scan     		PDF MT42C8255 512-cycle 300mW 40-Pin micron DRAM

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual


    OCR Scan     		PDF G01b7Db KM428C258 KM428C258 110ns 130ns 150ns 40-PIN 40/44-PIN

    intel i5 block diagram

    Abstract: DYNAMIC RAM CONTROLLER intel 82c08 82C08 INTEL 32 lead PLCC 8208 intel IC 8208 82C06 82C08-10 b237
    Text: intei 82C08 CHMOS DYNAMIC RAM CONTROLLER 0 Wait State with INTEL ^Processors iAPX 286 82C08-20 20 MHz 10, 8 MHz) I 82C08-16 16 MHz iAPX 186/88 } 82C08-10 10 MMz 86/88 I 82C08-8 8 MHz Supports 64K and 256K DRAMs (256K x 1 and 256K x 4 Organizations) Power Down Mode with Programmable


    OCR Scan     		PDF 82C08 82C08-20 82C08-16 82C08-10 82C08-8 82C06 intel i5 block diagram DYNAMIC RAM CONTROLLER intel 82c08 INTEL 32 lead PLCC 8208 intel IC 8208 b237

    Untitled

    Abstract: No abstract text available
    Text: M O S E L ViTEUC V104J8 256K C M O S MEMORY M ODULE Features Description • ■ ■ ■ ■ ■ The V104J8 Memory Module is organized as 2 62,144 x 8 bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. Decoupling capacitors, mounted


    OCR Scan     		PDF V104J8 V104J8 30-lead 7777m G003517 b3S3311

    SM58256A

    Abstract: No abstract text available
    Text: JUl 16 1993 SM58256A 256KByte 256K x 8 CMOS DRAM Module General Description Features The SM58256A is a high performance, 256Kbyte dynamic RAM memory module organized as 256K words by 8 bits, in a 30-pin, SIMM package. • • • The module utilizes two CMOS 256K x 4 dynamic RAMs


    OCR Scan     		PDF SM58256A 256KByte 256Kbyte 30-pin, 60/70/80ns

    difference between intel 8086 and intel 80186 pro

    Abstract: 82C08 intel 82c08 difference between intel 80186 and intel 80286 pro 82C08-8 80188 programming 82C08-10 intel 80186 pin out IC 8208 intel 8208
    Text: in te i. 82C08 CHMOS DYNAMIC RAM CONTROLLER • ■ 0 Walt State with INTEL ^Processors iAPX 286 1 10, 8 MHz J iAPX 186/88 1 86/88 J 82C08-20 20 MHz 82C08-16 16 MHz 82C08-10 10 MHz 82C08-8 8 MHz ■ Supports 64K and 256K DRAMs (256K x 1 and 256K x 4 Organizations)


    OCR Scan     		PDF 82C08 82C08-20 82C08-16 82C08-10 82C08-8 82C08 difference between intel 8086 and intel 80186 pro intel 82c08 difference between intel 80186 and intel 80286 pro 80188 programming intel 80186 pin out IC 8208 intel 8208

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K X MT43C256K8A1 8 TR IP L E -P O R T DRAM 256K X 8 DRAM WITH DUAL 5 1 2 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 60ns random, 15ns serial


    OCR Scan     		PDF MT43C256K8A1 512-cycle 096-bit 64-Pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual


    OCR Scan     		PDF D01bb52 KM428C256, KM428V256 512x8 KM428C/V256 110ns 130ns 150ns 50nsCYCLE

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |v iic : r MT43C256K8A1 256K X 8 TRIPLE-PORT DRAM o n 256K X 8 DRAM WITH DUAL 5 1 2 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 60ns random , 15ns serial


    OCR Scan     		PDF MT43C256K8A1 512-cycle 096-bit MT43C256K8A1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT43C256K8A1 256K X 8 TPDRAM |^ IC = R C 3 N TRIPLE PORT DRAM 256K X 8 DRAM WITH DUAL 512 x 8 SAMS FEATURES PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports Fast access times - 60ns random, 15ns serial Operation and control compatible with 2 Meg VRAMS


    OCR Scan     		PDF MT43C256K8A1 450mW 512-cycle 096-bit 64-Pin MT43C256K8A1