MO-47AE
Abstract: DSP96002 EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C 512Kx48
Text: EDI8L32256C 256Kx32 SRAM Module 256Kx32, 5V Static Ram Features 256Kx32 bit CMOS Static DSP Memory Solution • Texas Instruments TMS320C3x, TMS320C4x • Analog SHARCTM DSP • Motorola DSP96002 Random Access Memory Array • Fast Access Times: 15, 17, 20 and 25ns
|
Original
|
PDF
|
EDI8L32256C
256Kx32
256Kx32,
TMS320C3x,
TMS320C4x
DSP96002
MO-47AE
EDI8L32256C
MO-47AE
DSP96002
EDI8L24128C
EDI8L32128C
EDI8L32512C
EDI8L3265C
512Kx48
|
EDI8L32128V
Abstract: EDI8L32512V MO-47AE TMS320LC31
Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to
|
Original
|
PDF
|
EDI8L32256V
256Kx32
256Kx32
EDI8L32256V
TMS320LC31,
512Kx16.
512Kx48
256Kx24s
EDI8L24256V)
EDI8L32128V
EDI8L32512V
MO-47AE
TMS320LC31
|
DSP96002
Abstract: EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C MO-47AE block diagram of of TMS320C4X
Text: EDI8L32256C Features 256Kx32, 5V Static Ram T NO The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. The device is available with access times of 15, 17, 20 and 25ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to
|
Original
|
PDF
|
EDI8L32256C
256Kx32,
EDI8L32256C
256Kx32
TMS320C30/31
320C32
TMS320C4x
DSP96002
512Kx16.
512Kx48
EDI8L24128C
EDI8L32128C
EDI8L32512C
EDI8L3265C
MO-47AE
block diagram of of TMS320C4X
|
cd 5151
Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
Text: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution
|
Original
|
PDF
|
EDI8L32256V
256Kx32
EDI8L32256V
21060L
21062L
TMS320LC31
512Kx16BS2\
cd 5151
512kx4
EDI8L32128V
EDI8L32512V
MO-47AE
TMS320LC31
ADSP2106XL
|
Untitled
Abstract: No abstract text available
Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP
|
OCR Scan
|
PDF
|
ED/8L322S6V
25SKx32
256KX32
21060L
21062L
TMS320LC31
MO-47AE
EDI8L32256V
EDI8L32256V20AC
|
256kx32
Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP
|
OCR Scan
|
PDF
|
EDI8L32256V
256Kx32
21060L
ADSP-21062L
TMS320LC31
MO-47AE
EDI8L32256V
avai8L32256V15AC
ADSP-21062L
EDI8L32128V
EDI8L32512V
MO-47AE
Theta-J
|
Untitled
Abstract: No abstract text available
Text: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory
|
OCR Scan
|
PDF
|
EDI8L32256C
256KX32
EDI8L32256C
20and
TMS320C3x,
TMS320C4x
DSP96002
|